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公开(公告)号：US20220397720A1
公开(公告)日：2022-12-15
申请号：US17893101
申请日：2022-08-22
Applicant: Quantum-Si Incorporated
Inventor： Ali Kabiri , Bing Shen , Gerard Schmid , James Beach , Kyle Preston , Sharath Hosali
Abstract: Apparatus and methods for improving optical signal collection in an integrated device are described. A microdisk can be formed in an integrated device and increase collection and/or concentration of radiation incident on the microdisk and re-radiated by the microdisk. An example integrated device that can include a microdisk may be used for analyte detection and/or analysis. Such an integrated device may include a plurality of pixels, each having a reaction chamber for receiving a sample to be analyzed, an optical microdisk, and an optical sensor configured to detect optical emission from the reaction chamber. The microdisk can comprise a dielectric material having a first index of refraction that is embedded in one or more surrounding materials having one or more different refractive index values.
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公开(公告)号：US20220349823A1
公开(公告)日：2022-11-03
申请号：US17862297
申请日：2022-07-11
Applicant: Quantum-Si Incorporated
Inventor： Jonathan M. Rothberg , Ali Kabiri , Gerard Schmid , Keith G. Fife , James Beach , Jason W. Sickler , Lawrence C. West , Paul E. Glenn , Kyle Preston , Farshid Ghasemi , Benjamin Cipriany , Jeremy Lackey
IPC: G01N21/64 , C12Q1/6869 , C12Q1/6874 , G01N21/77 , G01N33/543
Abstract: System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device may include multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes a surface having a trench region recessed from a portion of the surface and an array of sample wells, disposed in the trench region. The integrated device also includes a waveguide configured to couple excitation energy to at least one sample well in the array and positioned at a first distance from a surface of the trench region and at a second distance from the surface in a region separate from the trench region. The first distance is smaller than the second distance. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device.
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公开(公告)号：US11237326B2
公开(公告)日：2022-02-01
申请号：US16042968
申请日：2018-07-23
Applicant: Quantum-Si Incorporated
Inventor： Jonathan M. Rothberg , Gerard Schmid , Alexander Gondarenko , James Beach , Kyle Preston , Farshid Ghasemi , Jeremy Lackey , Jack Jewell , Keith G. Fife , Ali Kabiri
Abstract: An integrated device and related instruments and systems for analyzing samples in parallel are described. The integrated device may include sample wells arranged on a surface of where individual sample wells are configured to receive a sample labeled with at least one fluorescent marker configured to emit emission light in response to excitation light. The integrated device may further include photodetectors positioned in a layer of the integrated device, where one or more photodetectors are positioned to receive a photon of emission light emitted from a sample well. The integrated device further includes one or more photonic structures positioned between the sample wells and the photodetectors, where the one or more photonic structures are configured to attenuate the excitation light relative to the emission light such that a signal generated by the one or more photodetectors indicates detection of photons of emission light.
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公开(公告)号：US20200284957A1
公开(公告)日：2020-09-10
申请号：US16809785
申请日：2020-03-05
Applicant: Quantum-Si Incorporated
Inventor： Michael Bellos , Faisal R. Ahmad , James Beach , Michael Coumans , Sharath Hosali , Ali Kabiri , Kyle Preston , Gerard Schmid , Bing Shen , Jonathan M. Rothberg
Abstract: Apparatus and methods relating to attenuating excitation radiation incident on a sensor in an integrated device that is used for sample analysis are described. At least one semiconductor film of a selected material and crystal morphology is located between a waveguide and a sensor in an integrated device that is formed on a substrate. Rejection ratios greater than 100 or more can be obtained for excitation and emission wavelengths that are 40 nm apart for a single layer of semiconductor material.
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公开(公告)号：US20200075426A1
公开(公告)日：2020-03-05
申请号：US16555902
申请日：2019-08-29
Applicant: Quantum-Si Incorporated
Inventor： Gerard Schmid , James Beach
IPC: H01L21/8234 , H01L21/02 , G01N33/58 , G01N33/487
Abstract: Methods of forming an integrated device, and in particular forming one or more sample wells in an integrated device, are described. The methods may involve forming a metal stack over a cladding layer, forming an aperture in the metal stack, forming first spacer material within the aperture, and forming a sample well by removing some of the cladding layer to extend a depth of the aperture into the cladding layer. In the resulting sample well, at least one portion of the first spacer material is in contact with at least one layer of the metal stack.
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Patent Agency Ranking
公开(公告)号：US12203853B2
公开(公告)日：2025-01-21
申请号：US18320964
申请日：2023-05-19
Applicant: Quantum-Si Incorporated
Inventor： Ali Kabiri , Bing Shen , James Beach , Kyle Preston , Gerard Schmid
IPC: G01N21/64 , H01L27/146
Abstract: Apparatus and methods relating to photonic bandgap optical nanostructures are described. Such optical nanostructures may exhibit prohibited photonic bandgaps or allowed photonic bands, and may be used to reject (e.g., block or attenuate) radiation at a first wavelength while allowing transmission of radiation at a second wavelength. Examples of photonic bandgap optical nanostructures includes periodic and quasi-periodic structures, with periodicity or quasi-periodicity in one, two, or three dimensions and structural variations in at least two dimensions. Such photonic bandgap optical nanostructures may be formed in integrated devices that include photodiodes and CMOS circuitry arranged to analyze radiation received by the photodiodes.
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公开(公告)号：US20240142378A1
公开(公告)日：2024-05-02
申请号：US18320964
申请日：2023-05-19
Applicant: Quantum-Si Incorporated
Inventor： Ali Kabiri , Bing Shen , James Beach , Kyle Preston , Gerard Schmid
IPC: G01N21/64 , H01L27/146
CPC classification number: G01N21/6428 , G01N21/6402 , G01N21/6408 , H01L27/14625 , H01L27/14685 , G01N2021/6439 , G01N2201/06113 , G01N2201/063
Abstract: Apparatus and methods relating to photonic bandgap optical nanostructures are described. Such optical nanostructures may exhibit prohibited photonic bandgaps or allowed photonic bands, and may be used to reject (e.g., block or attenuate) radiation at a first wavelength while allowing transmission of radiation at a second wavelength. Examples of photonic bandgap optical nanostructures includes periodic and quasi-periodic structures, with periodicity or quasi-periodicity in one, two, or three dimensions and structural variations in at least two dimensions. Such photonic bandgap optical nanostructures may be formed in integrated devices that include photodiodes and CMOS circuitry arranged to analyze radiation received by the photodiodes.
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公开(公告)号：US20220238389A1
公开(公告)日：2022-07-28
申请号：US17715915
申请日：2022-04-07
Applicant: Quantum-Si Incorporated
Inventor： Gerard Schmid , James Beach
IPC: H01L21/8234 , H01L21/02 , G01N33/487 , G01N33/58 , B01L3/00 , B81C1/00
Abstract: Methods of forming an integrated device, and in particular forming one or more sample wells in an integrated device, are described. The methods may involve forming a metal stack over a cladding layer, forming an aperture in the metal stack, forming first spacer material within the aperture, and forming a sample well by removing some of the cladding layer to extend a depth of the aperture into the cladding layer. In the resulting sample well, at least one portion of the first spacer material is in contact with at least one layer of the metal stack.
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公开(公告)号：US11322413B2
公开(公告)日：2022-05-03
申请号：US16555902
申请日：2019-08-29
Applicant: Quantum-Si Incorporated
Inventor： Gerard Schmid , James Beach
IPC: B01L3/00 , B81C1/00 , H01L21/8234 , H01L21/02 , G01N33/487 , G01N33/58
Abstract: Methods of forming an integrated device, and in particular forming one or more sample wells in an integrated device, are described. The methods may involve forming a metal stack over a cladding layer, forming an aperture in the metal stack, forming first spacer material within the aperture, and forming a sample well by removing some of the cladding layer to extend a depth of the aperture into the cladding layer. In the resulting sample well, at least one portion of the first spacer material is in contact with at least one layer of the metal stack.
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公开(公告)号：US20220011486A1
公开(公告)日：2022-01-13
申请号：US17482692
申请日：2021-09-23
Applicant: Quantum-Si Incorporated
Inventor： Michael Bellos , Faisal R. Ahmad , James Beach , Michael Coumans , Sharath Hosali , Ali Kabiri , Kyle Preston , Gerard Schmid , Bing Shen , Jonathan M. Rothberg
Abstract: Apparatus and methods relating to attenuating excitation radiation incident on a sensor in an integrated device that is used for sample analysis are described. At least one semiconductor film of a selected material and crystal morphology is located between a waveguide and a sensor in an integrated device that is formed on a substrate. Rejection ratios greater than 100 or more can be obtained for excitation and emission wavelengths that are 40 nm apart for a single layer of semiconductor material.
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