ELECTRICALLY SHIELDED THROUGH-WAFER INTERCONNECT
    21.
    发明申请
    ELECTRICALLY SHIELDED THROUGH-WAFER INTERCONNECT 有权
    电气屏蔽通过波形互连

    公开(公告)号:US20100171196A1

    公开(公告)日:2010-07-08

    申请号:US12063774

    申请日:2006-08-15

    IPC分类号: H01L23/538

    摘要: Through-Wafer Interconnections allow for the usage of cost-effective substrates for detector chips. According to an exemplary embodiment of the present invention, detecting element for application in an examination apparatus may be provided, comprising a wafer with a sensitive region and a coaxial through-wafer interconnect structure. This may reduce the susceptibility of the interconnection by providing an effective shielding.

    摘要翻译: 通过晶片互连允许为检测器芯片使用经济高效的基板。 根据本发明的示例性实施例,可以提供用于检查装置中的检测元件,其包括具有敏感区域的晶片和同轴贯通晶片互连结构。 这可以通过提供有效的屏蔽来降低互连的敏感性。

    Pixel Implemented Current Amplifier
    22.
    发明申请
    Pixel Implemented Current Amplifier 审中-公开
    像素实现电流放大器

    公开(公告)号:US20110168892A1

    公开(公告)日:2011-07-14

    申请号:US11813220

    申请日:2005-12-19

    IPC分类号: G01J1/42

    摘要: The present invention provides a radiation sensor featuring a plurality of individual sensor elements, e.g. pixels, each of which having a radiation detection portion that is adapted to generate an electric current in response to impingement of electromagnetic radiation and a current amplifier for amplifying the photoelectric current generated by the radiation detection portion. Current amplification is therefore performed locally within each pixel of the radiation sensor itself. This local current amplification effectively allows to increase sensitivity and response of the radiation sensor and therefore enables implementation of the radiation sensor on the basis of CMOS technology. By means of the current amplification, the radiation sensor can be adapted for read-out by means of read-out devices and signal processing modules featuring distinct input specifications Further, a bias current required by the pixel implemented current amplifier is reproduced within each pixel and coupled to consecutive or adjacently arranged sensor elements or pixel, thereby providing a cascaded bias current regeneration and bias current distribution scheme.

    摘要翻译: 本发明提供了一种辐射传感器,其特征在于多个单独的传感器元件,例如 像素,每个具有适于响应于电磁辐射的冲击而产生电流的辐射检测部分和用于放大由辐射检测部分产生的光电流的电流放大器。 因此,电流放大在辐射传感器本身的每个像素内本地进行。 这种局部电流放大有助于增加辐射传感器的灵敏度和响应,因此可以在CMOS技术的基础上实现辐射传感器。 通过电流放大,辐射传感器可以通过读出装置和具有不同输入规格的信号处理模块进行读出。此外,像素实现的电流放大器所需的偏置电流在每个像素内被再现, 耦合到连续或相邻布置的传感器元件或像素,从而提供级联的偏置电流再生和偏置电流分配方案。

    X-ray detector
    23.
    发明授权
    X-ray detector 失效
    X射线探测器

    公开(公告)号:US07435966B2

    公开(公告)日:2008-10-14

    申请号:US10543563

    申请日:2004-01-22

    IPC分类号: G01T1/24

    CPC分类号: G01T1/2018

    摘要: The invention relates to an X-ray detector for detecting X-radiation, as used, in particular, in computer tomographic (CT) systems. The X-ray detector in accordance with the invention is composed of a photo sensor device, which comprises individual detector elements (1), above which scintillator elements (2) are disposed. These convert the incident X-ray light (6) into visible or UV light (7), which is detected by a photodiode (4) located on the detector element (1). In accordance with the invention, a micro-lens (3), which focuses the light (7) departing from the scintillator element (2) onto the photodiode (4), is disposed between the scintillator element (2) and the detector element (1). It is possible, in this manner, to use large areas of the detector element (1) for further electronic components (5) outside the photodiode (4), and, at the same time, to ensure a high DQE (Detection Quantum Efficiency) in that the light (7) departing from the scintillator element (2) is virtually fully exploited. The crosstalk from scatter radiation from adjacent detector elements is effectively prevented simultaneously.

    摘要翻译: 本发明涉及用于检测X射线的X射线检测器,特别是在计算机断层摄影(CT)系统中使用。 根据本发明的X射线检测器由光传感器装置组成,该光传感器装置包括单独的检测器元件(1),其上设置有闪烁体元件(2)。 这些将入射的X射线光(6)转换成由位于检测器元件(1)上的光电二极管(4)检测到的可见光或紫外光(7)。 根据本发明,将从闪烁体元件(2)离开的光(7)聚焦到光电二极管(4)上的微透镜(3)设置在闪烁体元件(2)和检测器元件( 1)。 以这种方式,可以将大面积的检测器元件(1)用于在光电二极管(4)外部的另外的电子部件(5),同时,为了确保高的DQE(检测量子效率) 因为从闪烁体元件(2)出发的光(7)实际上被充分利用。 来自相邻检测器元件的散射辐射的串扰被有效地同时防止。

    Pixel Implemented Current to Frequency Converter
    24.
    发明申请
    Pixel Implemented Current to Frequency Converter 审中-公开
    像素实现电流到频率转换器

    公开(公告)号:US20080217546A1

    公开(公告)日:2008-09-11

    申请号:US11813215

    申请日:2005-12-19

    IPC分类号: G01T1/24

    CPC分类号: G01T1/2928 G01T1/247

    摘要: The present invention provides a radiation sensor (104) that has a plurality of sensor elements, wherein each sensor element has a photoelectric detection portion and an integrated current to frequency converter for a built-in analog digital conversion of an acquired analog signal being indicative of an intensity of electromagnetic radiation impinging on the photoelectric detection part. Typically, the detector element corresponds to a pixel of a light detector, such as a photodiode. Preferably, the current to frequency converter as well as the photoelectric conversion portion are arranged besides one another on a common substrate and are implemented on the basis of CMOS technology allowing for a costs efficient mass production of the radiation sensor.

    摘要翻译: 本发明提供一种辐射传感器(104),其具有多个传感器元件,其中每个传感器元件具有光电检测部分和集成电流 - 频率转换器,用于对所获取的模拟信号进行内置模拟数字转换, 电磁辐射强度照射在光电检测部分上。 通常,检测器元件对应于诸如光电二极管的光检测器的像素。 优选地,电流到频率转换器以及光电转换部分在公共衬底上彼此相互排列,并且基于允许辐射传感器的成本有效的批量生产的CMOS技术来实现。

    Electrically shielded through-wafer interconnect
    25.
    发明授权
    Electrically shielded through-wafer interconnect 有权
    电屏蔽透晶片互连

    公开(公告)号:US08018067B2

    公开(公告)日:2011-09-13

    申请号:US12063774

    申请日:2006-08-15

    IPC分类号: H01L23/48

    摘要: Through-Wafer Interconnections allow for the usage of cost-effective substrates for detector chips. According to an exemplary embodiment of the present invention, detecting element for application in an examination apparatus may be provided, comprising a wafer with a sensitive region and a coaxial through-wafer interconnect structure. This may reduce the susceptibility of the interconnection by providing an effective shielding.

    摘要翻译: 通过晶片互连允许为检测器芯片使用经济高效的基板。 根据本发明的示例性实施例,可以提供用于检查装置中的检测元件,其包括具有敏感区域的晶片和同轴贯通晶片互连结构。 这可以通过提供有效的屏蔽来降低互连的敏感性。

    Microelectronic System with a Passivation Layer
    26.
    发明申请
    Microelectronic System with a Passivation Layer 审中-公开
    具有钝化层的微电子系统

    公开(公告)号:US20080258067A1

    公开(公告)日:2008-10-23

    申请号:US11573716

    申请日:2005-08-11

    IPC分类号: G01T1/24 H01L31/18 H01L31/08

    摘要: The invention relates to a microelectronic system, particularly for an X-ray detector, comprising a semiconductor layer (1) with an array of pixels (P) which are composed of photosensitive components (3) and associated electronic circuits (4). An insulating passivation layer (5) with recesses (5a) in its surface is disposed between the semiconductor layer (1) and a scintillator (8). A shielding metal (6) for the protection of the electronic circuits (4) from X-radiation may be disposed in the recesses (5a) of the passivation layer (5). Furthermore, the recesses may contain glue for the fixation of the scintillator (8), wherein the passivation layer (5) additionally serves as a spacer between scintillator (8) and semiconductor layer (1).

    摘要翻译: 本发明涉及一种微电子系统,特别是一种用于X射线检测器的微电子系统,其包括具有由光敏元件(3)和相关电子电路(4)组成的像素阵列(P)的半导体层(1)。 在半导体层(1)和闪烁体(8)之间设置有在其表面上具有凹部(5a)的绝缘钝化层(5)。 用于保护电子电路(4)免受X射线的屏蔽金属(6)可设置在钝化层(5)的凹槽(5a)中。 此外,凹部可以包含用于固定闪烁体(8)的胶,其中钝化层(5)另外用作闪烁体(8)和半导体层(1)之间的间隔物。

    Shielding for an x-ray detector
    27.
    发明授权
    Shielding for an x-ray detector 有权
    屏蔽X射线探测器

    公开(公告)号:US07405408B2

    公开(公告)日:2008-07-29

    申请号:US10596152

    申请日:2004-12-02

    IPC分类号: G01T1/20

    CPC分类号: G01T1/2018

    摘要: The invention relates to an X-ray detector with detector elements (1) arranged in a layer. The detector elements (1) contain a scintillator element (2) for the conversion of X-rays (X) into photons (v), a photodiode (5) for detection of the photons (v), and a processing circuit (4) for the processing of electric signals generated by the photodiode (5). In order to protect the electronics (4) from X-rays a shielding (3) of variable effective thickness (d1, d2) is disposed in front of the electronics (4). This shielding (3) can in particular be L-shaped. By reduction of the effective thickness of the shielding (3) to a necessary minimum the volume of the scintillator unit (2) can be maximized.

    摘要翻译: 本发明涉及一种具有布置在一层中的检测器元件(1)的X射线检测器。 检测器元件(1)包括用于将X射线(X)转换成光子(v)的闪烁体元件(2),用于检测光子(v)的光电二极管(5)和处理电路(4) 用于处理由光电二极管(5)产生的电信号。 为了保护电子器件(4)免受X射线影响,可变有效厚度(d 1,d 2)的屏蔽层(3)设置在电子器件(4)的前面。 这种屏蔽(3)可以特别是L形。 通过将屏蔽(3)的有效厚度减小到所需的最小值,可以使闪烁体单元(2)的体积最大化。

    X-ray detector
    28.
    发明申请
    X-ray detector 失效
    X射线探测器

    公开(公告)号:US20060138335A1

    公开(公告)日:2006-06-29

    申请号:US10543563

    申请日:2004-01-22

    IPC分类号: G01T1/20

    CPC分类号: G01T1/2018

    摘要: The invention relates to an X-ray detector for detecting X-radiation, as used, in particular, in computer tomographic (CT) systems. The X-ray detector in accordance with the invention is composed of a photo sensor device, which comprises individual detector elements (1), above which scintillator elements (2) are disposed. These convert the incident X-ray light (6) into visible or UV light (7), which is detected by a photodiode (4) located on the detector element (1). In accordance with the invention, a micro-lens (3), which focuses the light (7) departing from the scintillator element (2) onto the photodiode (4), is disposed between the scintillator element (2) and the detector element (1). It is possible, in this manner, to use large areas of the detector element (1) for further electronic components (5) outside the photodiode (4), and, at the same time, to ensure a high DQE (Detection Quantum Efficiency) in that the light (7) departing from the scintillator element (2) is virtually fully exploited. The crosstalk from scatter radiation from adjacent detector elements is effectively prevented simultaneously.

    摘要翻译: 本发明涉及用于检测X射线的X射线检测器,特别是在计算机断层摄影(CT)系统中使用。 根据本发明的X射线检测器由光传感器装置组成,该光传感器装置包括单独的检测器元件(1),其上设置有闪烁体元件(2)。 这些将入射的X射线光(6)转换成由位于检测器元件(1)上的光电二极管(4)检测到的可见光或紫外光(7)。 根据本发明,将从闪烁体元件(2)离开的光(7)聚焦到光电二极管(4)上的微透镜(3)设置在闪烁体元件(2)和检测器元件( 1)。 以这种方式,可以将大面积的检测器元件(1)用于在光电二极管(4)外部的另外的电子部件(5),同时,为了确保高的DQE(检测量子效率) 因为从闪烁体元件(2)出发的光(7)实际上被充分利用。 来自相邻检测器元件的散射辐射的串扰被有效地同时防止。

    X-ray examination apparatus and method
    30.
    发明授权
    X-ray examination apparatus and method 有权
    X射线检查装置及方法

    公开(公告)号:US08699657B2

    公开(公告)日:2014-04-15

    申请号:US13139308

    申请日:2009-12-10

    摘要: The present invention relates to an examination apparatus and a corresponding method to realize a Spectral x-ray imaging device through inverse-geometry CT. The proposed examination apparatus comprises: an X-ray source unit (14) comprising a plurality of X-ray sources (15) for emitting X-rays (24) at a plurality of locations, an X-ray detection unit (18) for detecting X-rays emitted from one or more of said X-ray sources (15) after penetration of an examination area (19) between said X-ray source unit (14) said X-ray detection unit (18) and for generating detection signals, a processing unit (36) for processing the generated detection signals, and—a control unit (26) for controlling said X-ray sources (15) to subsequently, alone or in groups emit X-rays at least two different energy spectra such that in the time interval, during which a particular X-ray source (15a) or said group of X-ray sources (15a,15d, 15g), is switched over to emit X-rays at a different energy spectrum, said particular X-ray source (15a) or said group of X-ray sources (15a, 15d, 15g) is switched off and one or more other X-ray sources (15b, 15c) or groups of X-ray sources (15b, 15e, 15h; 15c, 15f, 15i) are subsequently switched on to emit X-rays.

    摘要翻译: 本发明涉及通过逆几何CT实现光谱X射线成像装置的检查装置和相应的方法。 所提出的检查装置包括:X射线源单元(14),包括用于在多个位置发射X射线(24)的多个X射线源(15); X射线检测单元(18),用于 检测在所述X射线源单元(14)所述X射线检测单元(18)上的检查区域(19)穿透之后从一个或多个所述X射线源(15)发射的X射线,并且用于产生检测 信号,用于处理所生成的检测信号的处理单元(36),以及用于随后单独或分组地控制所述X射线源(15)的控制单元(26)发射X射线至少两个不同的能谱 使得在特定X射线源(15a)或所述X射线源组(15a,15d,15g)的切换期间以不同的能谱发射X射线的时间间隔中,所述特定 X射线源(15a)或X射线源组(15a,15d,15g)被切断,一个或多个X射线源(15b,15c)或X射线组 (15b,15e,15h; 15c,15f,15i)随后被接通以发射X射线。