摘要:
A detector arrangement and/or a semiconductor-based image sensor with a plurality of detector elements or image pixels is described, which each have an integrated SD-(Sigma Delta) Modulator (20 to 29) or an integrated SD-A/D-(Sigma Delta Analog/Digital) converter (20 to 30), as well as particularly such a detector arrangement and/or such an image sensor on the basis of a CMOS-semiconductor. Particularly on the basis of the differential version and/or the multi-phase structure of the SD modulator and the SD-A/D converter, a detector arrangement and/or an image sensor with specially high noise robustness, a high dynamic range and a lesser noise can be produced, so that this is particularly suitable for usage in Computer Tomography (CT) apparatus.
摘要:
The present invention provides a radiation sensor (104) that has a plurality of sensor elements, wherein each sensor element has a photoelectric detection portion and an integrated current to frequency converter for a built-in analog digital conversion of an acquired analog signal being indicative of an intensity of electromagnetic radiation impinging on the photoelectric detection part. Typically, the detector element corresponds to a pixel of a light detector, such as a photodiode. Preferably, the current to frequency converter as well as the photoelectric conversion portion are arranged besides one another on a common substrate and are implemented on the basis of CMOS technology allowing for a costs efficient mass production of the radiation sensor.
摘要:
The present invention provides a radiation sensor featuring a plurality of individual sensor elements, e.g. pixels, each of which having a radiation detection portion that is adapted to generate an electric current in response to impingement of electromagnetic radiation and a current amplifier for amplifying the photoelectric current generated by the radiation detection portion. Current amplification is therefore performed locally within each pixel of the radiation sensor itself. This local current amplification effectively allows to increase sensitivity and response of the radiation sensor and therefore enables implementation of the radiation sensor on the basis of CMOS technology. By means of the current amplification, the radiation sensor can be adapted for read-out by means of read-out devices and signal processing modules featuring distinct input specifications Further, a bias current required by the pixel implemented current amplifier is reproduced within each pixel and coupled to consecutive or adjacently arranged sensor elements or pixel, thereby providing a cascaded bias current regeneration and bias current distribution scheme.
摘要:
Through-Wafer Interconnections allow for the usage of cost-effective substrates for detector chips. According to an exemplary embodiment of the present invention, detecting element for application in an examination apparatus may be provided, comprising a wafer with a sensitive region and a coaxial through-wafer interconnect structure. This may reduce the susceptibility of the interconnection by providing an effective shielding.
摘要:
The invention relates to a device for the detection and/or transmission of radiation, particularly an X-ray detector 1, that consists of a carrier 10 on which an array of detector modules 20 is arranged. The carrier 10 comprises holes 11 through which a ball at the backside of the detector modules 20 can be inserted in order to fix the modules such that they can still rotate to a certain degree. Due to this freedom, the sensor modules 20 can align themselves during assembly.
摘要:
The invention relates to a device for the detection and/or transmission of radiation, particularly an X-ray detector 1, that consists of a carrier 10 on which an array of detector modules 20 is arranged. The carrier 10 comprises holes 11 through which a ball at the backside of the detector modules 20 can be inserted in order to fix the modules such that they can still rotate to a certain degree. Due to this freedom, the sensor modules 20 can align themselves during assembly.
摘要:
The invention relates to an X-ray detector with detector elements (1) arranged in a layer. The detector elements (1) contain a scintillator element (2) for the conversion of X-rays (X) into photons (v), a photodiode (5) for detection of the photons (v), and a processing circuit (4) for the processing of electric signals generated by the photodiode (5). In order to protect the electronics (4) from X-rays a shielding (3) of variable effective thickness (d1, d2) is disposed in front of the electronics (4). This shielding (3) can in particular be L-shaped. By reduction of the effective thickness of the shielding (3) to a necessary minimum the volume of the scintillator unit (2) can be maximized.
摘要:
The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrangement density as well as good electrical conductivity and closed surfaces can be achieved. In accordance with the invention, an electrically conductive connection is guided from its front side through the substrate up to the rear side. The electrically conductive connection is completely surrounded from the outside. The insulator is formed by an opening which is filled with material. The inner wall is provided with a dielectric coating and/or filled with an electrically insulating or conductive material. The electrically conductive connection is formed with a further opening which is filled with an electrically conductive material and is arranged in the interior of the insulator. The openings are formed with step-free inner walls aligned orthogonally to the front side or tapering continuously in the direction of the rear side.
摘要:
The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrangement density as well as good electrical conductivity and closed surfaces can be achieved. In accordance with the invention, an electrically conductive connection is guided from its front side through the substrate up to the rear side. The electrically conductive connection is completely surrounded from the outside. The insulator is formed by an opening which is filled with material. The inner wall is provided with a dielectric coating and/or filled with an electrically insulating or conductive material. The electrically conductive connection is formed with a further opening which is filled with an electrically conductive material and is arranged in the interior of the insulator. The openings are formed with step-free inner walls aligned orthogonally to the front side or tapering continuously in the direction of the rear side.
摘要:
A Grid (1) for selective absorption of electromagnetic radiation (2, 3), as used e.g. in CT or NM imaging, comprises a block of a rigid foam material (4), where the foam material is essentially transparent to the electromagnetic radiation (2, 3), a first set of radiation absorbing lamellae (5), and a second set of radiation absorbing lamellae (6), the first and the second set of lamellae are arranged in the block of foam material so that a radiation transmission direction (T) is defined, the first set of lamellae and the second set of lamellae being arranged on top of each other with respect to the transmission direction (T). Such a grid arrangement is rigid due to the use of a carrier material, can be manufactured precisely and, furthermore, two-dimensional grids can be manufactured without the need to physically intersect the lamellae.