Systems and Methods with Concurrent Link-Timing Calibration

    公开(公告)号:US20240385777A1

    公开(公告)日:2024-11-21

    申请号:US18649159

    申请日:2024-04-29

    Applicant: Rambus Inc.

    Inventor: Torsten Partsch

    Abstract: A memory system includes a memory controller in communication with a memory device via a communication links and a memory interface that can be retrained without interrupting memory access. In a normal operating mode, the entire interface is available to the controller in service of access (read and write) requests. When retraining is required, the memory controller commands the memory device to enter a training mode that divides the interface functionally into two parts that operate concurrently, one that is retrained and another that services normal access requests. The training mode offers a reduced data rate, relative to the normal mode, but also reduced latency relative to interrupting data traffic altogether for training.

    Joint command dynamic random access memory (DRAM) apparatus and methods

    公开(公告)号:US12135901B2

    公开(公告)日:2024-11-05

    申请号:US17637724

    申请日:2020-08-25

    Applicant: Rambus Inc.

    Inventor: Torsten Partsch

    Abstract: Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) dynamic random access memory (DRAM) device is disclosed. The IC DRAM device includes memory core circuitry organized into bank groups of storage cells, each bank group accessible via a corresponding bank group address. A command/address (C/A) interface receives C/A information defining a joint command. The joint command includes information specifying a first memory access operation, a first bank group address associated with the first memory access operation, and a second memory access operation to be automatically directed to the first bank group address.

    Interconnect based address mapping for improved reliability

    公开(公告)号:US12086060B2

    公开(公告)日:2024-09-10

    申请号:US17893790

    申请日:2022-08-23

    Applicant: Rambus Inc.

    CPC classification number: G06F12/06 G11C11/4087 G06F2212/1032

    Abstract: Row addresses received by a module are mapped before being received by the memory devices of the module such that row hammer affects different neighboring row addresses in each memory device. Thus, because the mapped respective, externally received, row addresses applied to each device ensure that each set of neighboring rows for a given row address received by the module is different for each memory device on the module, row hammering of a given externally addressed row spreads the row hammering errors across different externally addressed rows on each memory device. This has the effect of confining the row hammer errors for each row that is hammered to a single memory device per externally addressed neighboring row. By confining the row hammer errors to a single memory device, the row hammer errors are correctible using a SDDC scheme.

    LOW POWER MEMORY WITH ON-DEMAND BANDWIDTH BOOST

    公开(公告)号:US20240021229A1

    公开(公告)日:2024-01-18

    申请号:US18216513

    申请日:2023-06-29

    Applicant: Rambus Inc.

    Inventor: Torsten Partsch

    CPC classification number: G11C7/222 G11C2207/2227

    Abstract: In a memory component having a command/address interface, timing interface and data interface, the command/address interface receives a first command/address value from a control component during a first interval and a second command/address value from the control component during a second interval. The timing interface receives a data strobe from the control component during the first interval and a data clock from the control component during the second interval, the data strobe departing from a parked voltage level to commence toggling at a time corresponding to reception of the first command/address value, and the data clock toggling throughout the second interval regardless of second command/address value reception-time. The data interface samples first write data corresponding to the first command/address value at times indicated by toggling of the data strobe, and samples second write data corresponding to the second command/address value at times indicated by toggling of the data clock.

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