Abstract:
A method for monitoring a semiconductor fabrication process creates a wafer of semiconductor chips. Each chip has a one or more diodes. Each diode is addressable as part of an array, corresponds to a physical location of the chip, and is connected in series to a stack. The stack is composed of one ore more vertical interconnects and metal contacts. The diode and associated stack of vertical interconnects is addressed, and the current through each of the stacks of vertical interconnects in an array is measured.
Abstract:
A constant current output sink or source eliminates a current limiting series resistor for a light emitting diode (LED) and maintains a constant light intensity from the LED for all operating and manufacturing variables of a digital device since the current through the LED is maintained at a constant value. The constant current output sink or source may be programmable for selection of a constant current value from a plurality of constant current values available.
Abstract:
A remote keyless entry (RKE) transponder has a programmable selective wake-up filter for determining whether the RKE transponder should wake-up to process a received signal. The wake-up filter correlates the timing of an input signal's carrier amplitude on and off time periods to a predefined programmable time period profile for a desired signal which has a certain carrier on time (time period on) and a certain carrier off time (time period off) arranged into a coded “header.” When a received signal matches the predefined time period profile, then the RKE transponder will wake-up to process the incoming signal data. The predefined time period profile may be programmable and may be stored in a header configuration register. Each RKE transponder has unique predefined time period on and time period off profiles.
Abstract:
Adaptive electrostatic discharge (ESD) protection of a device interface has very good ESD robustness when it is handled or when installed into or removed from a system. And has robust immunity to DPI, electromagnetic interference (EMI) and the like, when it is operational in a system. There is a significant capacitive coupling between the drain and gate of a ESD protection metal oxide semiconductor (MOS) device to enhance ESD protection and lower snap back voltage thereof whenever there is no (or a low level) DPI on the external connection to be protected. Whereupon when a significant DPI/EMI signal is detected on the external connection, the capa citive coupling between the drain and gate of the MOS ESD protection device is disconnected, bypassed or attenuated so that DPI/EMI immunity of the device is enhanced.
Abstract:
A method for monitoring a semiconductor fabrication process creates a wafer of semiconductor chips. Each chip has a one or more diodes. Each diode is addressable as part of an array, corresponds to a physical location of the chip, and is connected in series to a stack. The stack is composed of one ore more vertical interconnects and metal contacts. The diode and associated stack of vertical interconnects is addressed, and the current through each of the stacks of vertical interconnects in an array is measured.
Abstract:
A filter register bank, for example, for a CAN module provides parallel and serial access. The filter bank comprises a plurality of memory cells arranged in a matrix of columns and rows, wherein for parallel access all memory cells within a row are selectable and coupled with a first plurality of bus lines and for serial access all memory cells within a column are selectable and coupled with a second plurality of bus lines.