公开(公告)号：US06653737B2

公开(公告)日：2003-11-25

申请号：US10159181

申请日：2002-05-31

申请人： David V. Horak ,  William A. Klaasen ,  Thomas L. McDevitt ,  Mark P. Murray ,  Anthony K. Stamper

发明人： David V. Horak ,  William A. Klaasen ,  Thomas L. McDevitt ,  Mark P. Murray ,  Anthony K. Stamper

IPC分类号： H01L214763

CPC分类号： H01L21/76847 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnection structure preferably including one or more conductors that have a central region filled with an insulator, and a method of fabricating such an interconnection structure for preferably making an electrical connection to the conductor(s). The method preferably includes the steps of depositing and patterning a first insulator over a substrate to form an aperture opening to the substrate; depositing and polishing a first conductor to leave the first conductor in the aperture; depositing and patterning a second insulator to form an opening through the second insulator and a recess in the aperture; depositing one or more second conductors to line the opening and the recess, and to form a central region of the interconnection structure; depositing a third insulator to at least partially fill the central region; and making an electrical connection to the second conductor(s).

公开(公告)号：US06545330B1

公开(公告)日：2003-04-08

申请号：US09614234

申请日：2000-07-12

申请人： Kerry Bernstein ,  Andres Bryant ,  Wayne J. Howell ,  William A. Klaasen ,  Wilbur D. Pricer ,  Anthony K. Stamper

发明人： Kerry Bernstein ,  Andres Bryant ,  Wayne J. Howell ,  William A. Klaasen ,  Wilbur D. Pricer ,  Anthony K. Stamper

IPC分类号： H01L2714

CPC分类号： H01L27/14683 ,  G01T1/244 ,  H01L27/14659 ,  H01L31/115 ,  H01L31/118

摘要： An IC chip comprising, a nearby or remote source capable of particle emissions; circuitry formed in the IC chip that is adversely affected by impacts of particle emissions from said source; and a particle detector formed in the IC chip between the circuitry and source for detecting said particle emissions. In one embodiment of the present invention, the source comprises a solder ball that is formed on a surface of the IC chip, and the solder ball is capable of emitting alpha-particles. The particle emissions detector of the present invention is a reverse biased Schottky diode. The IC chip is formed by (a) providing an IC chip having at least one layer of particle sensitive circuitry formed therein; (b) forming another layer having at least one particle sensor region situated therein on a surface of said IC chip; and (c) optionally, forming at least one particle emission source over said another layer.

公开(公告)号：US5338963A

公开(公告)日：1994-08-16

申请号：US43090

申请日：1993-04-05

申请人： William A. Klaasen ,  Wen-Yuan Wang

发明人： William A. Klaasen ,  Wen-Yuan Wang

IPC分类号： G11C11/41 ,  H01L21/8244 ,  H01L27/11 ,  H01L27/02

CPC分类号： H01L27/1104 ,  Y10S257/903

摘要： Soft error immunity of a storage cell is greatly increased by division of a storage node into at least two portions and location of those portions on opposite sides of an isolation structure, such as a well of a conductivity type opposite to that of the substrate in which transistors of the memory cell may also be formed. The isolation structure thus limits collection of charge to only one of the portions of the storage node and reduces charge collection efficiency to a level where a critical amount of charge cannot be collected in all but a statistically negligible number of cases when such charge is engendered by impingement by ionizing radiation, such as energetic alpha particles. The layout of the memory cell having this feature also advantageously provides a simplified topology for the formation of additional ports comprising word line access transistors and bit lines.

摘要翻译： 通过将存储节点划分成隔离结构的相对侧上的这些部分的至少两个部分和位置，例如与基板的导电类型相反的阱的阱的位置，存储单元的软错误抗扰度大大增加，其中 还可以形成存储单元的晶体管。 因此，隔离结构将电荷收集限制在存储节点的仅一个部分，并且将电荷收集效率降低到在所有这些电荷不能被收集的情况下不能收集临界量的电荷的水平，但是当这种电荷由 通过电离辐射的冲击，例如能量α粒子。 具有该特征的存储单元的布局也有利地提供了用于形成包括字线访问晶体管和位线的附加端口的简化拓扑。