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    Integrated high-performance decoupling capacitor and heat sink
    3.
    发明授权
    Integrated high-performance decoupling capacitor and heat sink 失效
    集成高性能去耦电容和散热片

    公开(公告)号：US06548338B2

    公开(公告)日：2003-04-15

    申请号：US09764504

    申请日：2001-01-17

    申请人： Kerry Bernstein ,  Robert M. Geffken ,  Wilbur D. Pricer ,  Anthony K. Stamper ,  Steven H. Voldman

    发明人： Kerry Bernstein ,  Robert M. Geffken ,  Wilbur D. Pricer ,  Anthony K. Stamper ,  Steven H. Voldman

    IPC分类号： H01L218238

    CPC分类号： H01L28/40 ,  H01L23/3672 ,  H01L23/3735 ,  H01L27/0805 ,  H01L2924/0002 ,  H01L2924/10158 ,  H01L2924/00

    摘要： A significant and very effective decoupling capacitor and heat sink combination that, in a single structure provides both a heat sink and a decoupling capacitor in close proximity to the active circuit on the chip requiring either heat sinking or decoupling capacitance or both. This is achieved by forming on a semiconductor chip, having a buried oxide layer therein, an integrated high-performance decoupling capacitor that uses a metallic deposit greater than 30 microns thick formed on the back surface of the chip and electrically connected to the active chip circuit to result in a significant and very effective decoupling capacitor and heat sink in close proximity to the active circuit on the chip requiring such decoupling capacitance and heat sinking capabilities. The decoupling capacitance can use the substrate of the chip itself as one of the capacitive plates and a formed metallic deposit as the second capacitive plate which also serves as a heat sink for the active circuit formed in the chip. The structure thus provides both a significant and effective decoupling capacitance in close proximity to the active circuit on the chip requiring such decoupling capacitance as well as providing improved heat sinking for the decoupled active circuit.

    摘要翻译： 一种显着且非常有效的去耦电容器和散热器组合，其在单个结构中提供散热器和去耦电容器，其紧邻芯片上的有源电路，需要散热或去耦电容或两者兼有。 这通过在其中具有掩埋氧化物层的半导体芯片上形成集成的高性能去耦电容器来实现，所述高性能去耦电容器使用形成在芯片的背面上并且电连接到有源芯片电路的大于30微米厚的金属沉积物 导致显着且非常有效的去耦电容器和散热器紧邻芯片上的有源电路，需要这种去耦电容和散热能力。 去耦电容可以使用芯片本身的衬底作为电容板之一，并且形成金属沉积物作为第二电容板，其也用作形成在芯片中的有源电路的散热器。 因此，该结构提供了重要且有效的去耦电容，其紧邻芯片上的有源电路，需要这种去耦电容，并为解耦的有源电路提供改进的散热。

    Integrated high-performance decoupling capacitor and heat sink
    4.
    发明授权
    Integrated high-performance decoupling capacitor and heat sink 失效
    集成高性能去耦电容和散热片

    公开(公告)号：US06236103B1

    公开(公告)日：2001-05-22

    申请号：US09283828

    申请日：1999-03-31

    申请人： Kerry Bernstein ,  Robert M. Geffken ,  Wilbur D. Pricer ,  Anthony K. Stamper ,  Steven H. Voldman

    发明人： Kerry Bernstein ,  Robert M. Geffken ,  Wilbur D. Pricer ,  Anthony K. Stamper ,  Steven H. Voldman

    IPC分类号： H01L2900

    CPC分类号： H01L28/40 ,  H01L23/3672 ,  H01L23/3735 ,  H01L27/0805 ,  H01L2924/0002 ,  H01L2924/10158 ,  H01L2924/00

    摘要： A significant and very effective decoupling capacitor and heat sink combination that, in a single structure provides both a heat sink and a decoupling capacitor in close proximity to the active circuit on the chip requiring either heat sinking or decoupling capacitance or both. This is achieved by forming on a semiconductor chip, having a buried oxide layer therein, an integrated high-performance decoupling capacitor that uses a metallic deposit greater than 30 microns thick formed on the back surface of the chip and electrically connected to the active chip circuit to result in a significant and very effective decoupling capacitor and heat sink in close proximity to the active circuit on the chip requiring such decoupling capacitance and heat sinking capabilities. The decoupling capacitance can use the substrate of the chip itself as one of the capacitive plates and a formed metallic deposit as the second capacitive plate which also serves as a heat sink for the active circuit formed in the chip. The structure thus provides both a significant and effective decoupling capacitance in close proximity to the active circuit on the chip requiring such decoupling capacitance as well as providing improved heat sinking for the decoupled active circuit.

    摘要翻译： 一种显着且非常有效的去耦电容器和散热器组合，其在单个结构中提供散热器和去耦电容器，其紧邻芯片上的有源电路，需要散热或去耦电容或两者兼有。 这通过在其中具有掩埋氧化物层的半导体芯片上形成集成的高性能去耦电容器来实现，所述高性能去耦电容器使用形成在芯片的背面上并且电连接到有源芯片电路的大于30微米厚的金属沉积物 导致显着且非常有效的去耦电容器和散热器紧邻芯片上的有源电路，需要这种去耦电容和散热能力。 去耦电容可以使用芯片本身的衬底作为电容板之一，并且形成金属沉积物作为第二电容板，其也用作形成在芯片中的有源电路的散热器。 因此，该结构提供了重要且有效的去耦电容，其紧邻芯片上的有源电路，需要这种去耦电容，并为解耦的有源电路提供改进的散热。

    Circuit for operating a control transistor from a fusible link
    5.
    发明授权
    Circuit for operating a control transistor from a fusible link 失效
    用于从可熔链路操作控制晶体管的电路

    公开(公告)号：US5999037A

    公开(公告)日：1999-12-07

    申请号：US904397

    申请日：1997-07-31

    申请人： Kerry Bernstein ,  Daniel C. Edelstein ,  William A. Klaasen ,  Wilbur D. Pricer

    发明人： Kerry Bernstein ,  Daniel C. Edelstein ,  William A. Klaasen ,  Wilbur D. Pricer

    IPC分类号： G11C29/00 ,  G11C7/00

    CPC分类号： G11C29/785

    摘要： A circuit for enabling a controlled transistor in response to an ablated fusible link. The fusible link is configured so that no d.c. potential resides on the link once it has been ablated. A source of alternating voltage is capacitively coupled to the fusible link and maintains the fusible link from reconnection due to dendrite formation once it is ablated. An a.c. to d.c. voltage converter is used to signal the change in condition of the fusible link, thus, actuating a control transistor of a redundant circuit element in a replacement operation.

    摘要翻译： 一种用于响应于消融的可熔链路启用受控晶体管的电路。 熔丝链接被配置为没有直流 一旦消融，电位就位于链接上。 交流电压源电容耦合到可熔链路，并且一旦烧蚀就会由于枝晶形成而使可熔连接件重新连接。 一个 到达 电压转换器用于发信号通知熔断条件的变化，从而在更换操作中致动冗余电路元件的控制晶体管。

    Diode with alterable conductivity and method of making same
    6.
    发明授权
    Diode with alterable conductivity and method of making same 失效
    具有可变导电性的二极管及其制造方法

    公开(公告)号：US06344679B1

    公开(公告)日：2002-02-05

    申请号：US09443524

    申请日：1999-11-19

    申请人： William A. Klaasen ,  Wilbur D. Pricer ,  Jed Hickory Rankin

    发明人： William A. Klaasen ,  Wilbur D. Pricer ,  Jed Hickory Rankin

    IPC分类号： G11C1706

    CPC分类号： H01L23/5258 ,  G11C17/06 ,  G11C17/16 ,  H01L23/5254 ,  H01L27/0814 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device (102) having a plurality of diodes (100) with alterable electrical conductivity by a source of energy (30), e.g., a laser, external to the semiconductor device. The diodes are formed and energy is applied to alter the electrical conductivity at least 10%, and preferably by several orders of magnitude. Certain embodiments (20, 40 and 50) are formed so as to function as anti-fuses, while another embodiment (60) functions as a fuse. The diodes may be formed as planar diodes (20, 40, 50 and 60) or as lateral diodes (70).

    摘要翻译： 一种具有多个二极管（100）的半导体器件（102），所述多个二极管（100）具有通过所述半导体器件外部的能量源（30）例如激光器具有可改变的导电性。 形成二极管并施加能量以改变至少10％的电导率，优选地几个数量级。 某些实施例（20,40和50）被形成为用作抗熔丝，而另一个实施例（60）用作保险丝。 二极管可以形成为平面二极管（20,40,50和60）或形成为侧向二极管（70）。