-
公开(公告)号：US11578425B2
公开(公告)日：2023-02-14
申请号：US17082611
申请日：2020-10-28
申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
IPC分类号： H01L21/00 , C30B29/40 , C30B23/06 , H01L33/00 , C01B21/072 , C30B23/00 , H01S5/30 , H01S5/343 , H01S5/02 , H01L21/02
摘要： In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
-
公开(公告)号：US10407798B2
公开(公告)日：2019-09-10
申请号：US16008407
申请日：2018-06-14
IPC分类号： C30B25/10 , C30B29/40 , H01S5/02 , H01S5/343 , H01L21/20 , C30B23/00 , C30B33/06 , H01L33/00 , H01L33/06
摘要： In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.
-
23.发明授权公开(公告)号：US11555256B2
公开(公告)日：2023-01-17
申请号：US16444147
申请日：2019-06-18
申请人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
发明人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
IPC分类号： C30B29/40 , H01L33/32 , C30B23/06 , C30B33/02 , C01B21/072
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
-
24.发明授权公开(公告)号：US10106913B2
公开(公告)日：2018-10-23
申请号：US15410915
申请日：2017-01-20
摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
-
25.发明申请GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS WITH THERMAL-GRADIENT CONTROL 有权具有热梯度控制的大型氮化铝单晶的生长公开(公告)号：US20150218728A1
公开(公告)日：2015-08-06
申请号：US14686812
申请日：2015-04-15
CPC分类号： C30B23/002 , C30B23/06 , C30B29/403
摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
摘要翻译： 在各种实施例中，在形成半导体晶体期间，在两个热梯度（平行于垂直）的比率小于10的生长室内形成基本平行且基本垂直于生长方向的生长室内的非零热梯度，其中两个热梯度（平行于垂直）的比例小于10， ，例如在生长室外设置热屏蔽。
-
公开(公告)号：US11384449B2
公开(公告)日：2022-07-12
申请号：US16817876
申请日：2020-03-13
IPC分类号： C30B25/10 , C30B29/40 , H01S5/02 , H01S5/343 , C30B23/00 , C30B33/06 , H01L21/20 , H01L33/06 , H01L33/00
摘要： In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.
-
公开(公告)号：US09624601B2
公开(公告)日：2017-04-18
申请号：US14458861
申请日：2014-08-13
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , H01L21/02389 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
-
28.发明授权公开(公告)号：US09580833B2
公开(公告)日：2017-02-28
申请号：US14686812
申请日：2015-04-15
CPC分类号： C30B23/002 , C30B23/06 , C30B29/403
摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
摘要翻译： 在各种实施例中，在形成半导体晶体期间，在两个热梯度（平行于垂直）的比率小于10的生长室内形成基本平行且基本垂直于生长方向的生长室内的非零热梯度，其中两个热梯度（平行于垂直）的比例小于10， ，例如在生长室外设置热屏蔽。
-
29.发明授权公开(公告)号：US09028612B2
公开(公告)日：2015-05-12
申请号：US13173213
申请日：2011-06-30
CPC分类号： C30B23/002 , C30B23/06 , C30B29/403
摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
摘要翻译： 在各种实施例中，在形成半导体晶体期间，在两个热梯度（平行于垂直）的比率小于10的生长室内形成基本平行且基本垂直于生长方向的生长室内的非零热梯度，其中两个热梯度（平行于垂直）的比例小于10， ，例如在生长室外设置热屏蔽。
-
30.发明申请GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS WITH THERMAL-GRADIENT CONTROL 有权具有热梯度控制的大型氮化铝单晶的生长公开(公告)号：US20120000414A1
公开(公告)日：2012-01-05
申请号：US13173213
申请日：2011-06-30
CPC分类号： C30B23/002 , C30B23/06 , C30B29/403
摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
摘要翻译： 在各种实施例中，在形成半导体晶体期间，在两个热梯度（平行于垂直）的比率小于10的生长室内形成基本平行且基本垂直于生长方向的生长室内的非零热梯度，其中两个热梯度（平行于垂直）的比例小于10， ，例如在生长室外设置热屏蔽。
-
-
-
-
-
-
-
-
-
搜索结果
39 条记录 (耗时 0.038 秒)
