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1.发明授权公开(公告)号：US09028612B2
公开(公告)日：2015-05-12
申请号：US13173213
申请日：2011-06-30
CPC分类号： C30B23/002 , C30B23/06 , C30B29/403
摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
摘要翻译： 在各种实施例中，在形成半导体晶体期间，在两个热梯度（平行于垂直）的比率小于10的生长室内形成基本平行且基本垂直于生长方向的生长室内的非零热梯度，其中两个热梯度（平行于垂直）的比例小于10， ，例如在生长室外设置热屏蔽。
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2.发明申请GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS WITH THERMAL-GRADIENT CONTROL 有权具有热梯度控制的大型氮化铝单晶的生长公开(公告)号：US20120000414A1
公开(公告)日：2012-01-05
申请号：US13173213
申请日：2011-06-30
CPC分类号： C30B23/002 , C30B23/06 , C30B29/403
摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
摘要翻译： 在各种实施例中，在形成半导体晶体期间，在两个热梯度（平行于垂直）的比率小于10的生长室内形成基本平行且基本垂直于生长方向的生长室内的非零热梯度，其中两个热梯度（平行于垂直）的比例小于10， ，例如在生长室外设置热屏蔽。
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3.发明授权公开(公告)号：US10106913B2
公开(公告)日：2018-10-23
申请号：US15410915
申请日：2017-01-20
摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
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公开(公告)号：US20150275393A1
公开(公告)日：2015-10-01
申请号：US14684754
申请日：2015-04-13
申请人： Robert T. Bondokov , Leo J. Schowalter , Kenneth Morgan , Glen A. Slack , Shailaja P. Rao , Shawn Robert Gibb
发明人： Robert T. Bondokov , Leo J. Schowalter , Kenneth Morgan , Glen A. Slack , Shailaja P. Rao , Shawn Robert Gibb
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
摘要翻译： 具有面状平面缺陷密度的纳米氮化铝的单晶（AlN）为100cm-2。 用于生长单晶氮化铝的方法包括熔融铝箔以均匀地湿一层铝基，该基底形成AlN种子保持器的一部分，用于AlN种子用于AlN生长。 保持器可以基本上由基本上不可渗透的背板组成。
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公开(公告)号：US11913136B2
公开(公告)日：2024-02-27
申请号：US18093428
申请日：2023-01-05
申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
IPC分类号： H01L21/00 , C30B29/40 , C30B23/06 , H01L33/00 , C01B21/072 , C30B23/00 , H01S5/30 , H01S5/343 , H01S5/02 , H01L21/02
CPC分类号： C30B29/403 , C01B21/072 , C30B23/002 , C30B23/066 , H01L33/0075 , H01L21/02389 , H01S5/0217 , H01S5/3013 , H01S5/34333
摘要： In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
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公开(公告)号：US11578425B2
公开(公告)日：2023-02-14
申请号：US17082611
申请日：2020-10-28
申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
IPC分类号： H01L21/00 , C30B29/40 , C30B23/06 , H01L33/00 , C01B21/072 , C30B23/00 , H01S5/30 , H01S5/343 , H01S5/02 , H01L21/02
摘要： In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
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7.发明申请ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM 有权具有高透明度的超滤玻璃的氮化钠块状晶体及其形成方法公开(公告)号：US20110008621A1
公开(公告)日：2011-01-13
申请号：US12827507
申请日：2010-06-30
申请人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
发明人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
CPC分类号： C30B23/066 , C30B23/00 , C30B23/002 , C30B23/02 , C30B29/403 , C30B33/02 , C30B35/00 , H01L21/02389 , Y10T428/2982
摘要： In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
摘要翻译： 在各种实施方案中，形成单晶AlN的方法包括提供氧浓度小于约100ppm的基本上未掺杂的多晶AlN陶瓷，通过升华 - 重新缩合工艺在大于约2000℃的温度下形成单晶体AlN晶体 ℃，并以大约250℃/小时的第一速率将本体AlN晶体冷却至约1500℃至约1800℃的第一温度。
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8.发明授权公开(公告)号：US09580833B2
公开(公告)日：2017-02-28
申请号：US14686812
申请日：2015-04-15
CPC分类号： C30B23/002 , C30B23/06 , C30B29/403
摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
摘要翻译： 在各种实施例中，在形成半导体晶体期间，在两个热梯度（平行于垂直）的比率小于10的生长室内形成基本平行且基本垂直于生长方向的生长室内的非零热梯度，其中两个热梯度（平行于垂直）的比例小于10， ，例如在生长室外设置热屏蔽。
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公开(公告)号：US10954608B2
公开(公告)日：2021-03-23
申请号：US16185830
申请日：2018-11-09
申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
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10.发明申请ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM 有权具有高透明度的超滤玻璃的氮化钠块状晶体及其形成方法公开(公告)号：US20150218729A1
公开(公告)日：2015-08-06
申请号：US14687993
申请日：2015-04-16
申请人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
发明人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
CPC分类号： C30B23/066 , C30B23/00 , C30B23/002 , C30B23/02 , C30B29/403 , C30B33/02 , C30B35/00 , H01L21/02389 , Y10T428/2982
摘要： In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
摘要翻译： 在各种实施方案中，形成单晶AlN的方法包括提供氧浓度小于约100ppm的基本上未掺杂的多晶AlN陶瓷，通过升华 - 重新缩合工艺在大于约2000℃的温度下形成单晶体AlN晶体 ℃，并以大约250℃/小时的第一速率将本体AlN晶体冷却至约1500℃至约1800℃的第一温度。
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