White light emitting devices
    22.
    发明授权

    公开(公告)号:US10312419B2

    公开(公告)日:2019-06-04

    申请号:US15838594

    申请日:2017-12-12

    Abstract: A white light emitting device may include a blue light emitting diode configured to emit blue light and a plurality of wavelength conversion materials configured to convert the blue light into light having different wavelengths based on being excited by the blue light, and emit white light based on the converting, wherein the emitted white light is associated with an Illuminating Engineering Society (IES) TM-30-15 Fidelity Index (Rf) in a range of 78 to 89, an IES TM-30-15 Chroma Change by Hue Index Rcs15 in a range of 7% to 16%, and an IES TM-30-15 Chroma Change by Hue Index Rcs16 in a range of 7% to 16%, and a color difference between a reflection spectrum of a white specimen of the emitted white light, and International Commission on Illumination (CIE) Standard illuminant D65, that is equal to or less than 106.

    Semiconductor light emitting device and method of manufacturing the same
    27.
    发明授权
    Semiconductor light emitting device and method of manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US08852972B2

    公开(公告)日:2014-10-07

    申请号:US13769132

    申请日:2013-02-15

    CPC classification number: H01L33/50 H01L33/507 H01L2933/0041

    Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a conductive film on a surface of a semiconductor light emitting element. Phosphor particles are charged by mixing phosphor particles with an electrolyte having a metallic salt dissolved therein. The semiconductor light emitting element having the conductive film formed thereon is immersed in the electrolyte having the charged phosphor particles. A phosphor layer on the conductive film is formed by electrophoresing the phosphor particles. The conductive film is removed using wet etching.

    Abstract translation: 一种制造半导体发光器件的方法,包括在半导体发光元件的表面上形成导电膜。 通过将荧光体颗粒与溶解有金属盐的电解质混合来加入荧光体颗粒。 将其上形成有导电膜的半导体发光元件浸入具有带电荧光体颗粒的电解质中。 通过电泳荧光体颗粒来形成导电膜上的荧光体层。 使用湿蚀刻去除导电膜。

    Method for preparing a β-SiAlON phosphor
    28.
    发明授权
    Method for preparing a β-SiAlON phosphor 有权
    制备-SiAlON荧光体的方法

    公开(公告)号:US08709838B2

    公开(公告)日:2014-04-29

    申请号:US13777999

    申请日:2013-02-26

    Abstract: There is provided a method for preparing a β-SiAlON phosphor capable of be controlled to show characteristics such as high brightness and desired particle size distribution. The method for preparing a β-SiAlON phosphor represented by Formula: Si(6-x)AlxOyN(8-y):Lnz (wherein, Ln is a rare earth element, and the following requirements are satisfied: 0

    Abstract translation: 提供了一种制备能够被控制以显示诸如高亮度和期望的粒度分布等特性的“SiAlON”荧光体的方法。 制备由式:Si(6-x)Al x O y N(8-y):Lnz(其中,Ln是稀土元素)并满足以下要求的由式(Si-x)Al x O y N(8-y)表示的-SiAlON荧光体的方法:0

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