公开(公告)号：US20210408255A1

公开(公告)日：2021-12-30

申请号：US17468098

申请日：2021-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehwan MOON ,  Eunha LEE ,  Junghwa KIM ,  Hyangsook LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/423 ,  H01L21/28 ,  H01L21/02 ,  H01L27/108 ,  H01L49/02 ,  H01L29/51

Abstract: Provided are an electronic device including a dielectric layer having an adjusted crystal orientation and a method of manufacturing the electronic device. The electronic device includes a seed layer provided on a substrate and a dielectric layer provided on the seed layer. The seed layer includes crystal grains having aligned crystal orientations. The dielectric layer includes crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer.

公开(公告)号：US20210098596A1

公开(公告)日：2021-04-01

申请号：US17036469

申请日：2020-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jinseong HEO ,  Hyangsook LEE ,  Sangwook KIM ,  Yunseong LEE

IPC: H01L29/51 ,  H01L21/02 ,  H01L49/02

Abstract: Disclosed herein is a thin film structure, including a first conductive layer on a dielectric layer including a plurality of layers. Each of the plurality of layers includes a dopant layer containing a dopant A and a HfO2 layer to form a compound of HfxA1-xOz (0

公开(公告)号：US20190334110A1

公开(公告)日：2019-10-31

申请号：US16505710

申请日：2019-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongjin YUN ,  Sunghoon PARK ,  Seong Heon KIM ,  Hyangsook LEE ,  Woon Jung PAEK ,  Youngnam KWON ,  Yongsu KIM ,  Jaegwan CHUNG

IPC: H01L51/52 ,  H01B1/22 ,  H01L51/00 ,  H01L21/3213

Abstract: A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 Ω/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.

公开(公告)号：US20160351491A1

公开(公告)日：2016-12-01

申请号：US15052290

申请日：2016-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok LEE ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Seongjun PARK ,  Hyunjae SONG ,  Hyangsook LEE ,  Yeonchoo CHO

IPC: H01L23/528 ,  H01L27/06 ,  H01L23/532

CPC classification number: H01L27/0629 ,  H01L23/53271 ,  H01L27/101 ,  H01L27/228

Abstract: A wiring structure may include at least two conductive material layers and a two-dimensional layered material layer in an interface between the at least two conductive material layers. The two-dimensional layered material layer may include a grain expander layer which causes grain size of a conductive material layer which is on the two-dimensional layered material layer to be increased. Increased grain size may result in resistance of the second conductive material layer to be reduced. As a result, the total resistance of the wiring structure may be reduced. The two-dimensional layered material layer may contribute to reducing a total thickness of the wiring structure. Thus, a low-resistance and high-performance wiring structure without an increase in a thickness thereof may be implemented.

Abstract translation: 布线结构可以包括在至少两个导电材料层之间的界面中的至少两个导电材料层和二维层状材料层。 二维层状材料层可以包括使二维层状材料层上的导电性材料层的粒径增大的晶粒扩展层。 增加的晶粒尺寸可能导致第二导电材料层的电阻降低。 结果，可以减小布线结构的总电阻。 二维层状材料层可有助于减小布线结构的总厚度。 因此，可以实现不增加其厚度的低电阻和高性能布线结构。