公开(公告)号：US20210118990A1

公开(公告)日：2021-04-22

申请号：US17072737

申请日：2020-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Eunha LEE ,  Jinseong HEO ,  Junghwa KIM ,  Hyangsook LEE ,  Seunggeol NAM

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L23/29

Abstract: An electronic device includes a dielectric layer including crystal grains having aligned crystal orientations the dielectric layer may be between a substrate and a gate electrode. The dielectric layer may be between isolated first and second electrodes. A method of manufacturing an electronic device may include preparing a substrate having a channel layer, forming the dielectric layer on the channel layer, and forming a gate electrode on the dielectric layer.

公开(公告)号：US20230062878A1

公开(公告)日：2023-03-02

申请号：US17894504

申请日：2022-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Yunseong LEE ,  Hyangsook LEE ,  Sanghyun JO ,  Seunggeol NAM ,  Taehwan MOON ,  Hagyoul BAE ,  Eunha LEE ,  Junho LEE

IPC: H01L29/78 ,  H01L29/51

Abstract: An electronic device includes: a substrate including a source, a drain, and a channel between the source and the drain; a gate electrode arranged above the substrate and facing the channel, the gate electrode being apart from the channel in a first direction; and a ferroelectric thin film structure between the channel and the gate electrode, the ferroelectric thin film structure including a first ferroelectric layer, a crystallization barrier layer including a dielectric material, and a second ferroelectric layer, which are sequentially arranged from the channel in the first direction. The average of sizes of crystal grains of the first ferroelectric layer may be less than or equal to the average of sizes of crystal grains of the second ferroelectric layer, and owing to small crystal grains, dispersion of performance may be improved.

公开(公告)号：US20210388488A1

公开(公告)日：2021-12-16

申请号：US17132111

申请日：2020-12-23

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Hyangsook LEE ,  Hyoungsub KIM ,  Wonsik AHN ,  Eunha LEE

IPC: C23C16/30 ,  C23C16/455 ,  H01L21/02 ,  H01L21/285 ,  C23C16/02

Abstract: Provided are a method of growing a two-dimensional transition metal chalcogenide (TMC) film and a method of manufacturing a device including the two-dimensional TMC film. The method of growing a two-dimensional TMC film includes placing a metal layer having a predetermined pattern on a surface of a substrate; separately supplying a chalcogen precursor to a reaction chamber provided with the substrate; supplying a transition metal precursor to the reaction chamber; and evacuating the chalcogen precursor, the transition metal precursor, and by-products generated therefrom from the reaction chamber, wherein an amount of the chalcogen precursor and an amount of the transition metal precursor supplied to the reaction chamber may be controlled.

公开(公告)号：US20210083121A1

公开(公告)日：2021-03-18

申请号：US17001979

申请日：2020-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Sangwook KIM ,  Yunseong LEE ,  Sanghyun JO ,  Hyangsook LEE

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/40

Abstract: Provided are an electronic device and a method of manufacturing the same. The electronic device includes a ferroelectric crystallization layer between a substrate and a gate electrode and a crystallization prevention layer between the substrate and the ferroelectric crystallization layer. The ferroelectric crystallization layer is at least partially crystallized and includes a dielectric material having ferroelectricity or anti-ferroelectricity. Also, the crystallization prevention layer prevents crystallization in the ferroelectric crystallization layer from being spread toward the substrate.

公开(公告)号：US20160226012A1

公开(公告)日：2016-08-04

申请号：US14788780

申请日：2015-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongjin YUN ,  Sunghoon PARK ,  Seong Heon KIM ,  Hyangsook LEE ,  Woon Jung PAEK ,  Youngnam KWON ,  Yongsu KIM ,  Jaegwan CHUNG

IPC: H01L51/52 ,  H01L51/00 ,  H01L21/3213

CPC classification number: H01L51/5206 ,  H01B1/22 ,  H01L21/32131 ,  H01L51/0035 ,  H01L51/004 ,  H01L51/0067 ,  H01L51/0097 ,  H01L51/5234

Abstract: A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 Ω/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.

Abstract translation: 导体包括多个金属纳米结构和有机材料，其中围绕每个金属纳米结构的有机材料的一部分被选择性地去除，并且导体具有小于或等于约1.1的雾度，更大的透光率 在约550nm处为约85％以上，薄层电阻小于或等于约100Ω/ sq。 电子设备包括导体，制造导体的方法包括制备包括金属纳米结构和有机材料的导电膜，并使用簇离子束溅射从导电膜选择性地除去有机材料。

公开(公告)号：US20220140147A1

公开(公告)日：2022-05-05

申请号：US17459529

申请日：2021-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dukhyun CHOE ,  Hyangsook LEE ,  Junghwa KIM ,  Eunha LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/78 ,  H01L29/04 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

Abstract: A thin film structure includes a substrate; and a material layer having a fluorite structure, the material layer on the substrate and comprising crystals of which crystal orientation is aligned in a normal direction of the substrate. The material layer may have ferroelectricity. The material layer may include the crystals of which the crystal orientation is aligned in the normal direction of the substrate among all crystals of the material layer in a dominant ratio.

公开(公告)号：US20210193811A1

公开(公告)日：2021-06-24

申请号：US16923514

申请日：2020-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehwan MOON ,  Eunha LEE ,  Junghwa KIM ,  Hyangsook LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/423 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L49/02 ,  H01L27/108

Abstract: Provided are an electronic device including a dielectric layer having an adjusted crystal orientation and a method of manufacturing the electronic device. The electronic device includes a seed layer provided on a substrate and a dielectric layer provided on the seed layer. The seed layer includes crystal grains having aligned crystal orientations. The dielectric layer includes crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer.

公开(公告)号：US20210098595A1

公开(公告)日：2021-04-01

申请号：US16890231

申请日：2020-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunseong LEE ,  Sangwook KIM ,  Sanghyun JO ,  Jinseong HEO ,  Hyangsook LEE

IPC: H01L29/51 ,  H01L29/78 ,  H01L21/02

Abstract: A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.

公开(公告)号：US20190131030A1

公开(公告)日：2019-05-02

申请号：US16162488

申请日：2018-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjin YUN ,  Seyun KIM ,  Minsu SEOL ,  Changseok LEE ,  Seongheon KIM ,  Hyangsook LEE ,  Changhoon JUNG

IPC: H01B1/24 ,  C08L65/00 ,  C08L25/18 ,  C08K3/04 ,  H01L51/10 ,  H01L51/44 ,  H01L51/52

Abstract: Provided are a conductive composite structure for an electronic device, a method of preparing the conductive composite structure, an electrode for an electronic device including the conductive composite structure, and an electronic device including the conductive composite structure. The conductive composite structure may contain graphene and an organic composite layer including a conductive polymer having a work function of about 5.3 eV or lower, and has a sheet resistance deviation of about 10% or less.

公开(公告)号：US20170040566A1

公开(公告)日：2017-02-09

申请号：US15003845

申请日：2016-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun Sung WOO ,  Jinyoung HWANG ,  Weonho SHIN ,  Hyangsook LEE ,  Chan KWAK

IPC: H01L51/52 ,  H01B13/06 ,  H01B3/18 ,  H01B7/04 ,  H01L51/00 ,  H01B1/02

CPC classification number: H01B3/18 ,  H01B1/02 ,  H01L51/0021 ,  H01L51/445 ,  H01L51/5212 ,  H01L51/5228 ,  Y02E10/549

Abstract: A conductor includes a plurality of metal nanostructures having a circular cross-sectional shape, where each of the metal nanostructure is surrounded by an organic material having a thickness of less than or equal to about 0.5 nm. A method of manufacturing a conductor includes preparing a metal nanostructure having a polygonal cross-sectional shape, and providing a metal nanostructure having a circular cross-sectional shape by supplying light to the metal nanostructure having a polygonal cross-sectional shape.

Abstract translation: 导体包括具有圆形横截面形状的多个金属纳米结构，其中每个金属纳米结构被厚度小于或等于约0.5nm的有机材料包围。 制造导体的方法包括制备具有多边形横截面形状的金属纳米结构，并通过向具有多边形横截面形状的金属纳米结构提供光来提供具有圆形横截面形状的金属纳米结构。