公开(公告)号：US11562794B2

公开(公告)日：2023-01-24

申请号：US17324333

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jisu Kim ,  Hyunggon Kim ,  Sangsoo Park ,  Joonsuc Jang ,  Minseok Kim

IPC: G06F11/10 ,  G06F11/07 ,  G06F11/30 ,  G06F11/14 ,  G11C16/26 ,  G11C11/56 ,  G11C16/04 ,  G11C16/24 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18

Abstract: Provided is a storage device that performs a read operation by using a time interleaved sampling page buffer. The storage device controls a sensing point in time, when bit lines of even page buffer circuits are sensed, and a sensing point in time, when bit lines of odd page buffer circuits are sensed, with a certain time difference, and performs an Even Odd Sensing (EOS) operation in a stated order of even sensing and odd sensing. The storage device performs a two-step EOS operation and performs a main sensing operation on a selected memory cell according to a result of the two-step EOS operation.

公开(公告)号：US11450386B2

公开(公告)日：2022-09-20

申请号：US17221833

申请日：2021-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungmin Joe ,  Sangsoo Park ,  Joonsuc Jang ,  Kihoon Kang ,  Yonghyuk Choi

IPC: G11C16/10 ,  G11C16/08 ,  G11C16/24 ,  G11C16/26 ,  G11C16/30 ,  G11C16/32

Abstract: A nonvolatile memory device that performs two-way channel precharge during programming is provided. A program operation of the nonvolatile memory device simultaneously performs a first precharge operation in a bit line direction and a second precharge operation in a source line direction on channels of a plurality of cell strings before programming a selected memory cell to initialize the channels. The first precharge operation precharges the channels of the plurality of cell strings using a first precharge voltage applied to the bit line through first and second string selection transistors, and the second precharge operation precharges the channels of the plurality of cell strings using a second precharge voltage applied to the source line through first and second ground selection transistors.

公开(公告)号：US20220208271A1

公开(公告)日：2022-06-30

申请号：US17698056

申请日：2022-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonsuc Jang

IPC: G11C16/10 ,  G06F3/06 ,  G06F11/10 ,  G11C11/56 ,  G11C16/08 ,  G11C16/26 ,  G11C16/34

Abstract: An operating method of a memory system includes preprogramming multi-page data of a memory controller to a nonvolatile memory device, generating a state group code based on multi-bit data of the multi-page data, and each state group data of the state group code having less number of bits than corresponding multi-bit data, detecting sudden power-off occurring after the preprogramming, backing up, in response to the detecting of the sudden power-off occurring, the state group code to the nonvolatile memory device, recovering, after power is recovered from the sudden power-off, the multi-page data from the nonvolatile memory device, based on the state group code, reprogramming the multi-page data to the nonvolatile memory device, and reprogramming, in response to the detecting of the sudden power-off not occurring, the multi-page data of the memory controller to the nonvolatile memory device.