Abstract:
An apparatus comprises a mass storage unit and a plurality of circuit modules including a machine learning module, a programmable state machine module, and input/output interfaces. Switching circuitry is configured to selectively couple the circuit modules. Configuration circuitry is configured to access configuration data from the mass storage unit and to operate the switching circuitry to connect the circuit modules according to the configuration data.
Abstract:
A method of stereoscopic mapping an underwater location includes determining a relative position and relative distance between two separate sensors on separate underwater platforms. Each of the two separate sensors scans a same underwater feature from its respective determined relative position. A stereoscopic image of the underwater feature is created from the two scanned images.
Abstract:
A relatively larger nominal track spacing associated with a first write head is determined and a relatively smaller nominal track spacing associated with a second write head is determined. The first and second write heads simultaneously write to respective different first and second surfaces of a heat-assisted recording medium. A laser write power for a selected one of the first write head and the second write head is changed to enable the first write head and the second write head to operate at an equivalent nominal track spacing.
Abstract:
Torn write mitigation circuitry determines if a write operation to memory is in progress at or about a time of power loss. In response to the write operation being in progress at or about the time of the power loss, the torn write mitigation circuitry causes torn write data and metadata to be stored to a non-volatile cache. The torn write data comprise data left in a degraded or uncorrectable state as a result of the loss of power. The metadata describe the torn write data.
Abstract:
An apparatus includes a heat pipe with a fluid path. A first part of the fluid path is thermally coupled to a first region of a higher temperature and a second part of the fluid path thermally is coupled to a second region of a lower temperature. A difference between the higher temperature and the lower temperature induces a flow of a magnetic fluid in the fluid path. A switchable magnetic device is magnetically coupled to the fluid path. Activation of the switchable magnetic device reduces the flow of the magnetic fluid in the fluid path, which reduces heat transfer from the first region to the second region.
Abstract:
An apparatus of the present disclosure includes a controller coupled to a read/write head wherein the controller is configured to perform various operations. More specifically, the controller is configured to monitor an operational parameter of the read/write head and to detect a fault based on the operational parameter. The fault indicates that a write enabling energy source is malfunctioning during a write operation. The controller is additionally configured, in response to the fault, to take remedial action to protect data associated with the write operation.
Abstract:
A connection between a user device and a network server is established. Via the connection, a deep learning network is formed for a processing task. A first portion of the deep learning network operates on the user device and a second portion of the deep learning network operates on the network server. Based on cooperation between the user device and the network server, a boundary between the first portion and the second portion of the deep learning network is dynamically modified based on a change in a performance indicator that could affect the processing task
Abstract:
A data storage device receives a write data command and data. The data is stored in a buffer of the data storage device. The data storage device issues a command complete status indication. After the command complete status indication is issued, the data are stored in a primary memory of the data storage device. The primary memory comprises a first type of non-volatile memory and the buffer comprises a second type of non-volatile memory that is different from the first type of non-volatile memory.