公开(公告)号：US20200183057A1

公开(公告)日：2020-06-11

申请号：US16214972

申请日：2018-12-10

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Ulrich BOETTIGER ,  Brian Anthony VAARTSTRA

IPC: G02B3/00 ,  B33Y10/00 ,  B33Y80/00 ,  B29D11/00 ,  G03F7/00 ,  B41M3/00

Abstract: Three-dimensional structures may be formed on a substrate using a propellant that may decompose to form a gaseous byproduct. At least one overlying shell layer may deform due to volumes of gas between the substrate and the shell layer formed by the gaseous byproduct, thereby forming the three-dimensional structures. Multiple layers of propellant and shell layers may be stacked to multi-layered, three-dimensional structures. Propellant with different concentrations and shell layers with different thicknesses and materials may be used to control the shapes formed when the propellant is decomposed. Alternatively, porous layers may be deposited on a substrate and heated to expand volumes of gas between the substrate and the porous layers, thereby forming three-dimensional structures. The three-dimensional structures may be formed as microlenses in imaging sensor pixels, as it may be desired to form an array of microlenses that vary in size, shape, or curvature across one or more pixels.

公开(公告)号：US20200098812A1

公开(公告)日：2020-03-26

申请号：US16142231

申请日：2018-09-26

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Byounghee LEE ,  Ulrich BOETTIGER

IPC: H01L27/146 ,  G02F1/1335

Abstract: An image sensor may include phase detection pixels that gather phase detection data. The phase detection pixels may be formed in phase detection pixel groups with two or more phase detection pixels covered by a single microlens. Each phase detection pixel may have an asymmetric angular response to incident light. Phase detection pixels may be covered by diffractive lenses. A diffractive lens may cover a phase detection pixel pair to improve angular separation between the pixels. A diffractive lens may partially cover a phase detection pixel in a phase detection pixel pair to shift the angular response and account for an off-axis chief ray angle of the phase detection pixel pair.

公开(公告)号：US20200020730A1

公开(公告)日：2020-01-16

申请号：US16583743

申请日：2019-09-26

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marko MLINAR ,  Ulrich BOETTIGER ,  Richard MAURITZSON

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/369

Abstract: An image sensor may include pixels having nested sub-pixels. A pixel with nested sub-pixels may include an inner sub-pixel that has either an elliptical or a rectangular light collecting area. The inner sub-pixel may be formed in a substrate and may be immediately surrounded by a sub-pixel group that includes one or more sub-pixels. The inner sub-pixel may have a light collecting area at a surface that is less sensitive than the light collecting area of the one or more outer sub-pixel groups. Microlenses may be formed over the nested sub-pixels, to direct light away from the inner sub-pixel group to the outer sub-pixel groups in nested sub-pixels. A color filter of a single color may be formed over the nested sub-pixels. Hybrid color filters having a single color filter region over the inner sub-pixel and a portion of the one or more outer sub-pixel groups may also be used.

公开(公告)号：US20170208277A1

公开(公告)日：2017-07-20

申请号：US15155742

申请日：2016-05-16

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Ulrich BOETTIGER ,  Richard A. MAURITZSON

IPC: H04N5/378 ,  H01L27/146

CPC classification number: H04N5/378 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14698

Abstract: An image sensor with an array of pixels is provided. The array may include a semiconductor substrate having opposing first and second sides. A first photodiode region may be implanted in the semiconductor substrate through the first side. A second photodiode region may be implanted in the semiconductor substrate through the second side. The second photodiode region may be implanted to overlap with the first photodiode region in the semiconductor substrate to form a continuous photodiode region that extends from the first side to the second side of the substrate. The continuous region may generate charge in response to image light. The continuous region may belong to a single pixel that generates an image signal from the charge. The image signal may be conveyed to readout circuitry via metallization layers formed over the substrate. The first and second photodiode regions may be thermally activated prior to forming the metallization layers.

公开(公告)号：US20160300962A1

公开(公告)日：2016-10-13

申请号：US14681238

申请日：2015-04-08

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Ulrich BOETTIGER

IPC: H01L31/0216 ,  H04N9/04

CPC classification number: H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N9/045

Abstract: An imaging system may include an image sensor die, which may be backside illuminated (BSI). A light shielding layer and a conductive layer may be formed in the image sensor die. First and second portions of the conductive layer may be electrically isolated, so that the second conductive portion may be coupled to other power supply signals through a bond pad region, while the light shield may be shorted to ground. Optionally, the first and second portions may both be coupled to ground. The light shield may also be shorted through the bond pad region in a continuous conductive layer. A through oxide via may be formed in the image sensor die to couple metal interconnect structures to the conductive layer. Color filter containment structures may be formed over active image sensor pixels on the image sensor die, which may be selectively etched to improve planarity.

Abstract translation: 成像系统可以包括可以背面照明（BSI）的图像传感器裸片。 可以在图像传感器管芯中形成遮光层和导电层。 导电层的第一和第二部分可以是电隔离的，使得第二导电部分可以通过接合焊盘区域耦合到其它电源信号，而光屏蔽可能短路到地。 可选地，第一和第二部分可以都联接到地面。 光屏蔽还可以通过连续导电层中的接合焊盘区域短路。 可以在图像传感器芯片中形成通孔氧化物通孔，以将金属互连结构耦合到导电层。 可以在图像传感器管芯上的有源图像传感器像素上形成滤色器保护结构，其可以被选择性地蚀刻以改善平面度。