-
公开(公告)号：US20230230987A1
公开(公告)日：2023-07-20
申请号：US18065992
申请日：2022-12-14
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor： Byounghee LEE , Swarnal BORTHAKUR , Marc Allen SULFRIDGE
IPC: H01L27/146 , H04N25/131
CPC classification number: H01L27/14621 , H01L27/14627 , H04N25/131
Abstract: Imaging systems, and image pixels and related methods. At least one example is an image sensor comprising a plurality of image pixels. Each image pixel may comprise: a color router defining a router collection area on an upper surface; a first photosensitive region beneath the color router; a second photosensitive region beneath the color router; and a third photosensitive region beneath the color router. The color router may be configured to route photons of a first wavelength received at the router collection area to the first photosensitive region, route photons of a second wavelength received at the router collection area to the second photosensitive region, and route photons of a third wavelength received at the router collection area to the third photosensitive region.
-
公开(公告)号：US20240314417A1
公开(公告)日：2024-09-19
申请号：US18183106
申请日：2023-03-13
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor： Radu ISPASOIU , Swarnal BORTHAKUR , Byounghee LEE
Abstract: Image sensor pixels, imaging systems, and methods for constructing image sensor pixels. The image sensor pixel includes a high-light photodetector, a plurality of low-light photodetectors, and a spectral router. The plurality of low-light photodetectors is positioned around the high-light photodetector. The spectral router is positioned above the high-light photodetector and the plurality of low-light photodetectors. The spectral router is configured to route a portion of light received at the spectral router to one or more of the plurality of low-light photodetectors.
-
公开(公告)号：US20220181373A1
公开(公告)日：2022-06-09
申请号：US17651916
申请日：2022-02-22
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor： Marc Allen SULFRIDGE , Byounghee LEE , Ulrich BOETTIGER
IPC: H01L27/146 , H01L31/107
Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.
-
公开(公告)号：US20200295069A1
公开(公告)日：2020-09-17
申请号：US16402429
申请日：2019-05-03
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor： Marc Allen SULFRIDGE , Byounghee LEE , Ulrich BOETTIGER
IPC: H01L27/146 , H01L31/107
Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.
-
公开(公告)号：US20200227458A1
公开(公告)日：2020-07-16
申请号：US16245965
申请日：2019-01-11
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor： Byounghee LEE
IPC: H01L27/146
Abstract: An image sensor may include an array of imaging pixels. Each imaging pixel may have a photosensitive area formed in a semiconductor substrate that is covered by a respective microlens that focuses light onto the photosensitive area. Each imaging pixel may also include a diffractive lens formed in the semiconductor substrate. The diffractive lens may spread light to increase the average path length of incident light within the photosensitive area and increase efficiency of the pixel. An additional diffractive lens may be formed over the semiconductor substrate to focus light onto the diffractive lens and further improve efficiency. Multiple diffractive lenses may be formed in the semiconductor substrate of a single imaging pixel. The diffractive lenses may be multipart diffractive lenses.
-
Patent Agency Ranking
公开(公告)号：US20200043966A1
公开(公告)日：2020-02-06
申请号：US16598284
申请日：2019-10-10
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor： Byounghee LEE
IPC: H01L27/146 , H01L31/0216 , H04N5/335
Abstract: Image sensors may include plasmonic color filter elements that transmit specific wavelengths of incident light. Each plasmonic color filter element may be interposed between a respective microlens and photosensitive area. The plasmonic color filter elements may be formed from a metal layer such as gold, silver, platinum, aluminum, or copper and may have a pattern of openings in the metal layer that is designed to allow transmission of a certain type of light. To prevent cross-talk between adjacent pixels having plasmonic color filter elements, metal walls may be interposed between adjacent plasmonic color filter elements. The metal walls may extend above the upper surface of the metal layer that forms the plasmonic color filter elements. The metal walls may run around the periphery of each plasmonic color filter element.
-
公开(公告)号：US20200083271A1
公开(公告)日：2020-03-12
申请号：US16598327
申请日：2019-10-10
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor： Byounghee LEE
IPC: H01L27/146
Abstract: An image sensor may include an array of imaging pixels. Each imaging pixel may have a photosensitive area that is covered by a respective multipart diffractive lens to focus light onto the photosensitive area. The multipart diffractive lenses may have multiple portions with different indices of refraction. The portions of the diffractive lenses closer to the center of the diffractive lenses may have higher indices of refraction to focus light. Alternatively, the portions of the diffractive lenses closer to the center of the diffractive lenses may have lower indices of refraction to defocus light. The multipart diffractive lenses may have stacked layers with the same refractive indices but different widths.
-
公开(公告)号：US20190244994A1
公开(公告)日：2019-08-08
申请号：US16387919
申请日：2019-04-18
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor： Byounghee LEE
CPC classification number: H01L27/14625 , G02B1/11 , G02B3/0056 , G02B3/0062 , G02B5/1814 , G02B5/1885 , G02B5/201 , G02B13/0085 , G02B27/4205 , H01L27/1462 , H01L27/14621 , H01L27/14627
Abstract: An image sensor may include an array of imaging pixels. Each imaging pixel may have a photosensitive area that is covered by a microlens and a diffractive lens that focuses light onto the photosensitive area. The diffractive lens may be interposed between the microlens and the photosensitive area. The diffractive lens may have a higher index of refraction than the surrounding materials. The diffractive lens may be formed as a portion of an anti-reflection coating. In some cases, multiple diffractive lenses may be formed over the imaging pixels. Focusing and defocusing diffractive lenses may be used to tune the response of the imaging pixels to incident light.
-
公开(公告)号：US20250112069A1
公开(公告)日：2025-04-03
申请号：US18478115
申请日：2023-09-29
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor： Byounghee LEE
IPC: H01L21/673 , H01L27/146
Abstract: Implementations of a package tray may include a base and a grid of electromagnetic radiation reflectors coupled to a largest planar side of the base; wherein sidewalls of the grid of electromagnetic radiation reflectors may be configured to direct electromagnetic radiation toward sides of a plurality of semiconductor packages located within the grid. The electromagnetic radiation may be configured to assist in curing a component of the plurality of semiconductor packages.
-
公开(公告)号：US20240186350A1
公开(公告)日：2024-06-06
申请号：US18441588
申请日：2024-02-14
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor： Marc Allen SULFRIDGE , Byounghee LEE , Ulrich BOETTIGER
IPC: H01L27/146 , H01L31/107 , H04N25/50 , H04N25/702 , H04N25/75
CPC classification number: H01L27/14627 , H01L27/14685 , H01L31/107 , H04N25/50 , H04N25/702 , H04N25/75
Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.
-
-
-
-
-
-
-
-
-
Search Results
14
records
(took 0.015 seconds)
