公开(公告)号：US20190333942A1

公开(公告)日：2019-10-31

申请号：US16087811

申请日：2017-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Masakatsu OHNO ,  Seiji YASUMOTO ,  Hiroki ADACHI

IPC: H01L27/12 ,  H01L51/00 ,  H01L51/56 ,  B23K26/351

Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

公开(公告)号：US20170294463A1

公开(公告)日：2017-10-12

申请号：US15477528

申请日：2017-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Masakatsu OHNO ,  Seiji YASUMOTO ,  Hiroki ADACHI

IPC: H01L27/12 ,  H01L21/683 ,  H01L29/786

CPC classification number: H01L21/7806 ,  H01L21/02172 ,  H01L21/02345 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/47 ,  H01L21/6835 ,  H01L21/84 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/7869 ,  H01L51/0097 ,  H01L2221/6835 ,  H01L2221/68386 ,  H01L2227/326

Abstract: A peeling method at low cost with high mass productivity is provided. An oxide layer is formed over a formation substrate, a first layer is formed over the oxide layer using a photosensitive material, an opening is formed in a portion of the first layer that overlaps with the oxide layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the oxide layer, the oxide layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

公开(公告)号：US20160028034A1

公开(公告)日：2016-01-28

申请号：US14801331

申请日：2015-07-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Masataka SATO ,  Masafumi NOMURA ,  Toshiyuki MIYAMOTO

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L51/003 ,  H01L2251/5338

Abstract: A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming a functional layer over the separation layer; performing heat treatment to promote the release of hydrogen and nitrogen from the layer; and separating the substrate at the separation layer. The method allows the formation of an extremely thin oxide layer over the separation layer, which facilitates the separation, reduces the probability that the oxide layer remains under the layer, and contributes to the increase in efficiency of a device included in the functional layer.

Abstract translation: 公开了一种用于制造柔性半导体器件的方法。 该方法包括：在衬底上形成金属的分离层; 在含有氮，氧，硅和氢的气氛下用等离子体处理分离层; 在等离子体处理的分离层上形成层，该层能够向分离层供应氢和氮; 在分离层上形成功能层; 进行热处理以促进从该层释放氢和氮; 并在分离层处分离衬底。 该方法允许在分离层上形成极薄的氧化物层，这便于分离，降低了氧化层保留在该层之下的可能性，并且有助于提高包括在功能层中的器件的效率。