公开(公告)号：US20250072254A1

公开(公告)日：2025-02-27

申请号：US18948782

申请日：2024-11-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daiki NAKAMURA ,  Shingo EGUCHI ,  Tomoya AOYAMA ,  Nozomu SUGISAWA ,  Junya MARUYAMA ,  Kazuhiko FUJITA ,  Masataka SATO ,  Susumu KAWASHIMA

IPC: H10K59/35 ,  G06F1/16 ,  H10K50/14 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/18 ,  H10K50/814 ,  H10K50/818 ,  H10K50/844 ,  H10K50/856 ,  H10K59/131 ,  H10K77/10

Abstract: Display unevenness in a display panel is suppressed. A display panel with a high aperture ratio of a pixel is provided. The display panel includes a first pixel electrode, a second pixel electrode, a third pixel electrode, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, a first common layer, a second common layer, a common electrode, and an auxiliary wiring. The first common layer is positioned over the first pixel electrode and the second pixel electrode. The first common layer has a portion overlapping with the first light-emitting layer and a portion overlapping with the second light-emitting layer. The second common layer is positioned over the third pixel electrode. The second common layer has a portion overlapping with the third light-emitting layer. The common electrode has a portion overlapping with the first pixel electrode with the first common layer and the first light-emitting layer provided therebetween, a portion overlapping with the second pixel electrode with the first common layer and the second light-emitting layer provided therebetween, a portion overlapping with the third pixel electrode with the second common layer and the third light-emitting layer provided therebetween, and a portion in contact with a top surface of the auxiliary wiring.

公开(公告)号：US20210167329A1

公开(公告)日：2021-06-03

申请号：US17267857

申请日：2019-08-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroki ADACHI ,  Junpei YANAKA ,  Masataka SATO

IPC: H01L51/52 ,  H01L51/56 ,  H01L27/32

Abstract: A light-emitting device capable of long-time display in a bent state is provided. A light-emitting device that can be repeatedly bent with a small radius of curvature is provided. The flexible light-emitting device includes a light-emitting element, a first inorganic insulating layer, a second inorganic insulating layer, and a first organic insulating layer. The first organic insulating layer is positioned over the first inorganic insulating layer. The light-emitting element is positioned over the first inorganic insulating layer with the first organic insulating layer therebetween. The second inorganic insulating layer is positioned over the light-emitting element. An end portion of the first inorganic insulating layer and an end portion of the second inorganic insulating layer are each positioned inward from an end portion of the first organic insulating layer. The end portion of the first organic insulating layer is exposed on a side surface of the light-emitting device. The first inorganic insulating layer and the second inorganic insulating layer are preferably in contact with each other outside an end portion of the light-emitting element.

公开(公告)号：US20180190533A1

公开(公告)日：2018-07-05

申请号：US15909173

申请日：2018-03-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Masataka SATO ,  Shingo EGUCHI ,  Kunihiko SUZUKI

IPC: H01L21/683

CPC classification number: H01L21/6836 ,  B32B38/10 ,  H01L21/67132 ,  H01L21/6835 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/50 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2221/68386 ,  Y10T156/1712

Abstract: To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.

公开(公告)号：US20180019425A1

公开(公告)日：2018-01-18

申请号：US15646146

申请日：2017-07-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Masataka SATO ,  Hiroki ADACHI ,  Toru TAKAYAMA ,  Natsuko TAKASE

IPC: H01L51/50 ,  G09G5/02 ,  G02F1/1362

Abstract: A display device with high visibility regardless of the ambient brightness is manufactured at low cost. A method for manufacturing a display device that includes a first display element, a second display element, and an insulating layer is provided.The first display element includes a first pixel electrode that reflects visible light, a liquid crystal layer, and a first common electrode that transmits visible light. The second display element includes a second pixel electrode that transmits visible light, a light-emitting layer, and a second common electrode that reflects visible light. The first common electrode is formed over a first substrate. A separation layer that reflects visible light is formed over a formation substrate, the insulating layer is formed over the separation layer, and the second display element is formed over the insulating layer. The formation substrate and a second substrate are bonded to each other with an adhesive. Then, the formation substrate and the separation layer are separated from each other. The exposed separation layer is processed into the first pixel electrode. The liquid crystal layer is positioned between the first common electrode and the first pixel electrode and the first substrate and the second substrate are bonded to each other with an adhesive to form the first display element.

公开(公告)号：US20150351168A1

公开(公告)日：2015-12-03

申请号：US14725071

申请日：2015-05-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Masataka SATO ,  Saki OBANA ,  Junpei YANAKA ,  Koichi TAKESHIMA ,  Minato ITO ,  Kohei YOKOYAMA

IPC: H05B33/04 ,  H05B33/12 ,  B32B17/06

CPC classification number: H05B33/04 ,  B32B7/12 ,  B32B17/06 ,  B32B27/281 ,  B32B27/283 ,  B32B27/30 ,  B32B27/308 ,  B32B27/32 ,  B32B27/365 ,  B32B27/38 ,  B32B27/42 ,  B32B2255/20 ,  B32B2307/306 ,  B32B2457/00 ,  B32B2457/206 ,  H01L27/322 ,  H01L27/323 ,  H01L27/3276 ,  H01L51/525 ,  H01L51/5253 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2251/55 ,  H05B33/12 ,  Y10T428/24975

Abstract: A highly reliable light-emitting device is provided. A light-emitting device with high resistance to repeated bending is provided. A light-emitting device in which cracks are less likely to occur even in a high-temperature and high-humidity environment is provided. The light-emitting device includes a light-emitting element between a pair of insulating layers. The pair of insulating layers is sandwiched between a pair of bonding layers. The pair of bonding layers is sandwiched between a pair of flexible substrates. At least one of the insulating layers has compressive stress. At least one of the bonding layers has a glass transition temperature higher than or equal to 60° C. At least one of the substrates has a coefficient of linear expansion less than or equal to 60 ppm/K.

Abstract translation: 提供了高度可靠的发光装置。 提供了具有高抗重复弯曲性的发光装置。 提供即使在高温高湿环境下也难以发生裂纹的发光装置。 发光装置包括在一对绝缘层之间的发光元件。 一对绝缘层夹在一对接合层之间。 一对接合层夹在一对柔性基板之间。 至少一个绝缘层具有压应力。 至少一个接合层的玻璃化转变温度高于或等于60℃。至少一个基板具有小于或等于60ppm / K的线性膨胀系数。

公开(公告)号：US20210090879A1

公开(公告)日：2021-03-25

申请号：US16332546

申请日：2017-09-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Satoru IDOJIRI ,  Natsuko TAKASE

IPC: H01L21/02 ,  H01L21/304 ,  H01L21/306

Abstract: A glass substrate is reused. The mass productivity of a semiconductor device is increased.
A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second material includes one or both of a resin and a decomposition product of a resin. A cleaning method of a glass substrate, which includes a step of preparing the glass substrate one surface of which includes a first material and a second material and a step of exposing the first material by removing at least part of the second material.

公开(公告)号：US20180061638A1

公开(公告)日：2018-03-01

申请号：US15687855

申请日：2017-08-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Naoki IKEZAWA ,  Junpei YANAKA ,  Satoru IDOJIRI

IPC: H01L21/02 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L31/1892 ,  H01L21/02345 ,  H01L21/02488 ,  H01L21/02694 ,  H01L21/6835 ,  H01L27/1266 ,  H01L29/66969 ,  H01L31/1896 ,  H01L51/003 ,  H01L2221/68386 ,  H01L2224/83052 ,  H01L2924/35121

Abstract: The yield of a manufacturing process of a semiconductor device is increased. The productivity of a semiconductor device is increased. A first material layer is formed over a substrate, a second material layer is formed over the first material layer, and the first material layer and the second material layer are separated from each other, so that a semiconductor device is manufactured. In addition, a stack including the first material layer and the second material layer is preferably heated before the separation. The first material layer includes one or more of hydrogen, oxygen, and water. The first material layer includes a metal oxide, for example. The second material layer includes a resin (e.g., polyimide or acrylic). The first material layer and the second material layer are separated from each other by cutting a hydrogen bond. The first material layer and the second material layer are separated from each other in such a manner that water separated out by heat treatment at an interface between the first material layer and the second material layer or in the vicinity of the interface is irradiated with light.

公开(公告)号：US20170102598A1

公开(公告)日：2017-04-13

申请号：US15285096

申请日：2016-10-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka NAKADA ,  Masahiro KATAYAMA ,  Seiji YASUMOTO ,  Hiroki ADACHI ,  Masataka SATO ,  Koji KUSUNOKI ,  Yoshiharu HIRAKATA

IPC: G02F1/1362 ,  G06F3/01 ,  G02F1/1335 ,  G06F3/041 ,  G02F1/1345 ,  G02F1/1333

CPC classification number: G02F1/136286 ,  G02F1/13338 ,  G06F3/0412 ,  G06F2203/04103 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255

Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.

公开(公告)号：US20170040402A1

公开(公告)日：2017-02-09

申请号：US15221733

申请日：2016-07-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Hiroki ADACHI ,  Masataka SATO ,  Koji KUSUNOKI ,  Yoshiharu HIRAKATA

IPC: H01L27/32 ,  G02F1/1362 ,  G09G3/20 ,  G02F1/1335 ,  G06F3/01 ,  H01L27/12 ,  G02F1/1368

CPC classification number: H01L29/7869 ,  G02F1/133553 ,  G02F2201/44 ,  G09G3/2092 ,  G09G3/3648 ,  G09G5/34 ,  G09G2300/023 ,  G09G2300/046 ,  G09G2300/0465 ,  G09G2310/0205 ,  G09G2320/0242 ,  G09G2320/0626 ,  G09G2320/066 ,  G09G2320/0666 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2340/0435 ,  G09G2360/144 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/78648 ,  H01L29/78696

Abstract: A novel display panel that is highly convenient or reliable is provided. A structure in invented which includes a first display element, a first conductive film, a second conductive film, a first insulating film, an intermediate film, a pixel circuit, and a second display element. The first conductive film is electrically connected to the first display element. The second conductive film includes a region overlapping with the first conductive film. The first insulating film includes a region located between the second conductive film and the first conductive film. The first conductive film is located between the second conductive film and part of the intermediate film. The pixel circuit is electrically connected to the second conductive film. The second display element is electrically connected to the pixel circuit. The first insulating film has an opening. The second conductive film is electrically connected to the first conductive film through the opening.

Abstract translation: 提供了一种非常方便或可靠的新型显示面板。 本发明的一种结构包括第一显示元件，第一导电膜，第二导电膜，第一绝缘膜，中间膜，像素电路和第二显示元件。 第一导电膜电连接到第一显示元件。 第二导电膜包括与第一导电膜重叠的区域。 第一绝缘膜包括位于第二导电膜和第一导电膜之间的区域。 第一导电膜位于第二导电膜和中间膜的一部分之间。 像素电路与第二导电膜电连接。 第二显示元件电连接到像素电路。 第一绝缘膜具有开口。 第二导电膜通过开口与第一导电膜电连接。

公开(公告)号：US20140234664A1

公开(公告)日：2014-08-21

申请号：US14182834

申请日：2014-02-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Masataka SATO ,  Shingo EGUCHI ,  Kunihiko SUZUKI

IPC: H01L21/683

CPC classification number: H01L21/6836 ,  B32B38/10 ,  H01L21/67132 ,  H01L21/6835 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/50 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2221/68386 ,  Y10T156/1712

Abstract: To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.

Abstract translation: 为了提高剥离性，剥离工序的收率，柔软装置的制造成品率。 采用剥离方法，该方法包括在载体基材上形成含有钨的剥离层的第一步骤; 在剥离层上形成由包含含有氮氧化硅的第一层和包含氮化硅的第二层的堆叠形成的剥离层的第二步骤，并且在剥离层和剥离层之间形成含有氧化钨的氧化物层 要剥离的层; 通过热处理在氧化物层中形成含有钨和氮的化合物的第三步骤; 以及从氧化物层剥离的层剥离剥离层的第四工序。