公开(公告)号：US20210159266A1

公开(公告)日：2021-05-27

申请号：US17163629

申请日：2021-02-01

Applicant: Seoul Viosys Co., Ltd.

Inventor： Se Hee OH ,  Jong Kyu KIM ,  Joon Sub LEE

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/40

Abstract: A chip-scale package type light emitting diode is provided. In the light emitting diode according to one embodiment, an opening exposing a pad metal layer is separated from an opening of a lower insulation layer which exposes an ohmic reflection layer formed on a mesa. Therefore, it is possible to prevent solder, particularly Sn, from diffusing and contaminating the ohmic reflection layer.

公开(公告)号：US20200295229A1

公开(公告)日：2020-09-17

申请号：US16885536

申请日：2020-05-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  Min Woo KANG ,  Se Hee OH ,  Hyoung Jin LIM

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/44

Abstract: A chip-scale package type light emitting diode includes: a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer, in which the openings of the dielectric layer include a narrow and elongated bar-shaped opening adjacent to at least one of the first openings of the lower insulation layer.

公开(公告)号：US20190189680A1

公开(公告)日：2019-06-20

申请号：US16284468

申请日：2019-02-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Se Hee OH ,  Jong Kyu Kim ,  Joon Sub Lee

IPC: H01L27/15 ,  H01L33/62

CPC classification number: H01L27/15 ,  H01L33/02 ,  H01L33/10 ,  H01L33/46 ,  H01L33/48 ,  H01L33/52 ,  H01L33/62 ,  H01L2933/0066

Abstract: A chip-scale package type light emitting diode is provided. In the light emitting diode according to one embodiment, an opening exposing a pad metal layer is separated from an opening of a lower insulation layer which exposes an ohmic reflection layer formed on a mesa. Therefore, it is possible to prevent solder, particularly Sn, from diffusing and contaminating the ohmic reflection layer.

公开(公告)号：US20170331020A1

公开(公告)日：2017-11-16

申请号：US15663219

申请日：2017-07-28

Applicant: Seoul Viosys Co., Ltd.

Inventor： Se Hee OH ,  Mae Yi KIM ,  Seom Geun LEE ,  Myoung Hak YANG ,  Yeo Jin YOON

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/38 ,  H01L33/08 ,  H01L33/42 ,  H01L33/14

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/385 ,  H01L33/387 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting diode including a first light emitting cell and a second light emitting cell separated from each other on a substrate, a first transparent electrode layer electrically connected to the first light emitting cell, an interconnection electrically connecting the first light emitting cell to the second light emitting cell, and a first insulation layer. The first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell. The first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell, and includes an opening to expose a lower semiconductor layer of the first light emitting cell.