公开(公告)号：US20190280178A1

公开(公告)日：2019-09-12

申请号：US16424178

申请日：2019-05-28

Applicant: SEOUL VIOSYS CO., LTD. ,  SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Hyun A KIM ,  Jong Kyu KIM ,  Jong Hyeon CHAE

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/10 ,  H01L33/64

Abstract: A light emitting diode having a plurality of light emitting cells is provided. The light emitting diode according to an exemplary embodiment includes a lower insulation layer covering an ohmic reflection layer, connectors disposed on the lower insulation layer to connect the light emitting cells, and an upper insulation layer covering the connectors and the lower insulation layer. An edge of the lower insulation layer is spaced apart farther from an edge of the upper insulation layer than an edge of the light emitting cell. The lower insulation layer susceptible to moisture may be protected and reliability of the light emitting diode may improve.

公开(公告)号：US20230411436A1

公开(公告)日：2023-12-21

申请号：US18229143

申请日：2023-08-01

Applicant: Seoul Viosys Co., Ltd.

Inventor： Se Hee OH ,  Jong Kyu Kim ,  Joon Sub Lee

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/40

CPC classification number: H01L27/15 ,  H01L33/0016 ,  H01L33/405 ,  H01L33/62

Abstract: A chip-scale package type light emitting diode is provided. In the light emitting diode according to one embodiment, an opening exposing a pad metal layer is separated from an opening of a lower insulation layer which exposes an ohmic reflection layer formed on a mesa. Therefore, it is possible to prevent solder, particularly Sn, from diffusing and contaminating the ohmic reflection layer.

公开(公告)号：US20210151628A1

公开(公告)日：2021-05-20

申请号：US17157600

申请日：2021-01-25

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  Min Woo KANG ,  Se Hee OH ,  Hyoung Jin LIM

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/44

Abstract: A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

公开(公告)号：US20200176636A1

公开(公告)日：2020-06-04

申请号：US16782969

申请日：2020-02-05

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon CHAE ,  Joon Sup LEE ,  Daewoong SUH ,  Won Young ROH ,  Min Woo KANG ,  Jong Min JANG ,  Se Hee OH ,  Hyun A KIM

IPC: H01L33/38

Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

公开(公告)号：US20160247992A1

公开(公告)日：2016-08-25

申请号：US15147619

申请日：2016-05-05

Applicant: Seoul Viosys Co., Ltd.

Inventor： Se Hee OH ,  Mae Yi KIM ,  Seom Geun LEE ,  Myoung Hak YANG ,  Yeo Jin YOON

IPC: H01L33/62 ,  H01L33/42 ,  H01L33/38 ,  H01L33/08

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/385 ,  H01L33/387 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting diode including a first light emitting cell and a second light emitting cell separated from each other on a substrate, a first transparent electrode layer electrically connected to the first light emitting cell, an interconnection electrically connecting the first light emitting cell to the second light emitting cell, and a first insulation layer disposed on the first and second light emitting cells. The first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell. The first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell.

Abstract translation: 一种发光二极管，包括在基板上彼此分离的第一发光单元和第二发光单元，与第一发光单元电连接的第一透明电极层，将第一发光单元与第二发光单元电连接的第二 发光单元，以及设置在第一和第二发光单元上的第一绝缘层。 第一透明电极层设置在第一发光单元的上表面上，并且部分地覆盖第一发光单元的侧表面。 第一绝缘层将第一透明电极层与第一发光单元的侧表面分开。

公开(公告)号：US20240421261A1

公开(公告)日：2024-12-19

申请号：US18722165

申请日：2022-11-17

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Kyoung Wan KIM ,  Hae Yu KIM

IPC: H01L33/46

Abstract: A light-emitting diode according to an embodiment comprises: a substrate; a first conductive-type semiconductor layer disposed on the substrate; a mesa disposed on the first conductive-type semiconductor layer and including an active layer and a second conductive-type semiconductor layer; an ohmic contact layer disposed on the second conductive-type semiconductor layer and formed by islands which are spaced apart from each other; a dielectric layer covering the ohmic contact layer and having openings through which the respective islands are exposed; a metal reflective layer covering the dielectric layer and electrically connected to the islands through the openings of the dielectric layer; a lower insulating layer covering the metal reflective layer and having an opening through which the metal reflective layer is exposed; and first and second bump pads disposed on the lower insulating layer and electrically connected to the first and second conductive-type semiconductor layers, respectively.

公开(公告)号：US20240055563A1

公开(公告)日：2024-02-15

申请号：US18449179

申请日：2023-08-14

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  Min Woo KANG ,  Se Hee OH ,  Hyoung Jin LIM

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/382 ,  H01L33/20 ,  H01L33/405 ,  H01L33/44 ,  H01L33/32

Abstract: A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

公开(公告)号：US20210257528A1

公开(公告)日：2021-08-19

申请号：US17246856

申请日：2021-05-03

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Hyun A KIM ,  Jong Kyu KIM ,  Hyoung Jin LIM

IPC: H01L33/62 ,  H01L33/10 ,  H01L33/44 ,  H01L27/15 ,  H01L33/38 ,  H01L33/40 ,  H01L25/075 ,  H01L33/32 ,  H01L33/50 ,  H01L33/64

Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa with an active layer and a second conductivity type semiconductor layer disposed thereon, a first contact layer comprising an outer contact portion contacting the first conductivity type semiconductor layer near an edge thereof and an inner contact portion contacting the first conductivity type semiconductor layer in a region surrounded by the outer contact portion; a second contact layer disposed on the mesa and contacting the second conductivity type semiconductor layer; a first insulation layer covering the mesa, insulating the first contact layer, and exposing the first conductivity type semiconductor layer for the outer contact portion and the inner contact portion to contact the first conductivity type semiconductor layer, wherein the outer contact portion and the first insulation layer alternately contact the first conductivity type semiconductor layer along a side surface of the mesa.

公开(公告)号：US20200052175A1

公开(公告)日：2020-02-13

申请号：US16536819

申请日：2019-08-09

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Min Woo KANG ,  Jong Kyu KIM ,  Hyun A KIM

IPC: H01L33/62 ,  H01L27/15

Abstract: A light emitting device includes a first light emitting cell, a second light emitting cell, a first conductive pattern, a second conductive pattern, and a connection pattern. The connection pattern includes contact portions electrically connected to a second conductivity type semiconductor layer of the first light emitting cell and a first conductivity type semiconductor layer of the second light emitting cell. At an edge of a first region facing the second light emitting cell, one contact portion of the first conductive pattern is disposed between the contact portions of the connection pattern electrically connected to the second conductivity type semiconductor layer of the first light emitting cell, and one contact portion of the first conductive pattern is open outwards.

公开(公告)号：US20200035751A1

公开(公告)日：2020-01-30

申请号：US16594239

申请日：2019-10-07

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  So Ra LEE ,  Yeo Jin YOON ,  Jae Kwon KIM ,  Joon Sup LEE ,  Min Woo KANG ,  Se Hee OH ,  Hyun A. KIM ,  Hyoung Jin LIM

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64 ,  H01L33/36 ,  H01L33/62

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.