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    PCD wafer without substrate for high pressure / high temperature sintering
    22.
    发明授权
    PCD wafer without substrate for high pressure / high temperature sintering 有权

    公开(公告)号：US10046441B2

    公开(公告)日：2018-08-14

    申请号：US14566195

    申请日：2014-12-10

    Applicant: SMITH INTERNATIONAL, INC.

    Inventor： Yahua Bao ,  Ronald K. Eyre

    IPC: B24D18/00 ,  B24D99/00 ,  E21B10/56 ,  E21B10/55 ,  E21B10/567

    Abstract: A method of forming a cutting element may include subjecting a first press containing at least a diamond powder-containing container and a volume of a high melting temperature non-reactive material to a first high pressure high temperature sintering condition to form a sintered polycrystalline diamond wafer including a diamond matrix of diamond grains bonded together and a plurality of interstitial spaces between the bonded together diamond grains; and subjecting a second press containing the sintered polycrystalline diamond wafer and a substrate to a second high temperature high pressure condition, thereby attaching the wafer to the substrate to form a cutting element having a polycrystalline diamond layer on the substrate.

    High pressure high temperature cell
    24.
    发明授权
    High pressure high temperature cell 有权
    高压高温电池

    公开(公告)号：US09586376B2

    公开(公告)日：2017-03-07

    申请号：US13836396

    申请日：2013-03-15

    Applicant: SMITH INTERNATIONAL, INC.

    Inventor： Stewart N. Middlemiss ,  Yahua Bao ,  Lan Carter

    IPC: B30B15/34 ,  B01J3/06 ,  B30B11/00

    CPC classification number: B30B15/34 ,  B01J3/067 ,  B30B11/004

    Abstract: A high-pressure high-temperature cell including two or more thermal insulation layers is described. A high-pressure high-temperature cell including a current path through a thermal insulation layer, the current path being electrically connected to a heating element and having an indirect path through the thermal insulation layer, is also described. High-pressure high-temperature press systems including the foregoing high-pressure high-temperature cells alone or in combination are also disclosed.

    Abstract translation: 描述包括两个或更多个绝热层的高压高温电池。 还描述了包括通过绝热层的电流路径的高压高温电池，电流路径电连接到加热元件并且具有穿过绝热层的间接路径。 还公开了包括上述高压高温电池单独或组合的高压高温压机系统。

    ULTRA-HARD MATERIAL CUTTING ELEMENTS AND METHODS OF MANUFACTURING THE SAME WITH A METAL-RICH INTERMEDIATE LAYER
    26.
    发明申请
    ULTRA-HARD MATERIAL CUTTING ELEMENTS AND METHODS OF MANUFACTURING THE SAME WITH A METAL-RICH INTERMEDIATE LAYER 审中-公开
    超硬材料切割元件及其制造方法与金属中间层

    公开(公告)号：US20160168919A1

    公开(公告)日：2016-06-16

    申请号：US14957847

    申请日：2015-12-03

    Applicant: Smith International, Inc.

    Inventor： Liang Zhao ,  Xiaoge Gan ,  Yahua Bao ,  Yuri Y. Burhan ,  Youhe Zhang ,  J. Daniel Belnap ,  Zhijun Lin

    IPC: E21B10/567 ,  B24D18/00 ,  B24D3/06

    CPC classification number: B24D18/0009 ,  B24D3/06 ,  B24D18/0018

    Abstract: Methods for joining an ultra-hard body, such as a thermally stable polycrystalline diamond (TSP) body, to a substrate and mitigating the formation of high stress concentration regions between the ultra-hard body and the substrate. One method includes covering at least a portion of the ultra-hard body with an intermediate layer, placing the ultra-hard body and the intermediate layer in a mold, filling a remaining portion of mold with a substrate material including a matrix material and a binder material such that the intermediate layer is disposed between the ultra-hard body and the substrate material, and heating the mold to an infiltration temperature configured to melt the binder material and form the substrate.

    Abstract translation: 将超硬体（例如热稳定多晶金刚石（TSP）体）接合到基底上并减轻在超硬体与基底之间形成高应力集中区域的方法。 一种方法包括用中间层覆盖超硬体的至少一部分，将超硬体和中间层放置在模具中，用包括基质材料和粘合剂的基底材料填充模具的剩余部分 材料，使得中间层设置在超硬体和基底材料之间，并且将模具加热到被配置为熔化粘合剂材料并形成基底的浸渗温度。

    SINTERING OF THICK SOLID CARBONATE-BASED PCD FOR DRILLING APPLICATION
    27.
    发明申请
    SINTERING OF THICK SOLID CARBONATE-BASED PCD FOR DRILLING APPLICATION 有权
    基于固体碳酸钙的PCD钻孔应用

    公开(公告)号：US20140131117A1

    公开(公告)日：2014-05-15

    申请号：US14079689

    申请日：2013-11-14

    Applicant: Smith International, Inc.

    Inventor： Yahua Bao ,  Anatoliy Garan ,  Michael David France ,  J. Daniel Belnap

    IPC: E21B10/16 ,  B24D18/00

    CPC classification number: E21B10/567 ,  B24D3/04 ,  B24D18/0009 ,  E21B10/46

    Abstract: A method of making a polycrystalline diamond compact includes forming multiple layers of premised diamond particles and carbonate material, where the carbonate material includes an alkaline earth metal, carbonate, and where each layer has a weight percent ratio of diamond to carbonate that is different from adjacent layers. The layers are subjected to high pressure high temperature conditions to form polycrystalline diamond.

    Abstract translation: 制造多晶金刚石压块的方法包括形成多层前置金刚石颗粒和碳酸盐材料，其中碳酸盐材料包括碱土金属，碳酸盐，并且其中每层具有不同于相邻的金刚石与碳酸盐的重量百分比 层。 这些层经受高压高温条件以形成多晶金刚石。

    Polycrystalline diamond sintered/rebonded on carbide substrate containing low tungsten
    29.
    发明授权
    Polycrystalline diamond sintered/rebonded on carbide substrate containing low tungsten 有权

    公开(公告)号：US10358705B2

    公开(公告)日：2019-07-23

    申请号：US15536826

    申请日：2015-11-20

    Applicant: Smith International, Inc.

    Inventor： Yahua Bao ,  Fulong Wang ,  J. Daniel Belnap ,  Ronald K. Eyre ,  Yi Fang

    IPC: B22F3/14 ,  C22C1/10 ,  C22C26/00 ,  E21B10/573 ,  B22F5/00

    Abstract: A method of forming a polycrystalline diamond cutting element includes assembling a diamond material, a substrate, and a source of catalyst material or infiltrant material distinct from the substrate, the source of catalyst material or infiltrant material being adjacent to the diamond material to form an assembly. The substrate includes an attachment material including a refractory metal. The assembly is subjected to a first high-pressure/high temperature condition to cause the catalyst material or infiltrant material to melt and infiltrate into the diamond material and subjected to a second high-pressure/high temperature condition to cause the attachment material to melt and infiltrate a portion of the infiltrated diamond material to bond the infiltrated diamond material to the substrate.

    High content PCBN compact including W—Re binder
    30.
    发明授权
    High content PCBN compact including W—Re binder 有权

    公开(公告)号：US10315387B2

    公开(公告)日：2019-06-11

    申请号：US15198434

    申请日：2016-06-30

    Applicant: SMITH INTERNATIONAL, INC.

    Inventor： Yahua Bao ,  Scott L. Horman

    IPC: B32B15/04 ,  C22C29/16 ,  C22C26/00

    Abstract: The present invention relates to tungsten-rhenium coated compounds, materials formed from tungsten-rhenium coated compounds, and to methods of forming the same. In embodiments, tungsten and rhenium are coated on ultra hard material particles to form coated ultra hard material particles, and the coated ultra hard material particles are sintered at high temperature and high pressure.

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