公开(公告)号：US20220172983A1

公开(公告)日：2022-06-02

申请号：US17436532

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762

Abstract: A method for transferring a useful layer from a donor substrate to a carrier substrate comprises: a) providing the donor substrate, the donor substrate including a buried weakened plane; b) providing the carrier substrate; c) joining the donor substrate to the carrier substrate to form a bonded structure; and d) annealing the bonded structure in order to increase the level of weakening of the buried weakened plane. A predetermined stress is applied to the buried weakened plane during the annealing for a period of time, the predetermined stress being selected so as to initiate the splitting wave once a given level of weakening has been reached. At the end of the period of time, the given level of weakening having been reached, the predetermined stress causes initiation and self-sustained propagation of the splitting wave along the buried weakened plane, resulting in the useful layer being transferred to the carrier substrate.

公开(公告)号：US20220059603A1

公开(公告)日：2022-02-24

申请号：US17418148

申请日：2019-12-23

Applicant: Soitec

Inventor： Walter Schwarzenbach ,  Ludovic Ecarnot ,  Damien Massy ,  Nadia Ben Mohamed ,  Nicolas Daval ,  Christophe Girard ,  Christophe Maleville

IPC: H01L27/146 ,  H01L31/18

Abstract: A method of manufacturing a substrate for a front-facing image sensor, comprises:—providing a donor substrate comprising a semiconductor layer to be transferred,—providing a semiconductor carrier substrate,—bonding the donor substrate to the carrier substrate, an electrically insulating layer being at the bonding interface,—transferring the semiconductor layer to the carrier substrate,—implanting gaseous ions in the carrier substrate via the transferred semiconductor layer and the electrically insulating layer, and—after the implantation, epitaxially growing an additional semiconductor layer on the transferred semiconductor layer.

公开(公告)号：US20220059370A1

公开(公告)日：2022-02-24

申请号：US17438866

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/67 ,  H01L21/687

Abstract: A holding device for a fracturable assembly, which is intended to separate along a fracture plane defined between an upper part and a lower part of the fracturable assembly, comprises at least two protrusions configured to hold keep the fracturable assembly suspended in a substantially horizontal holding position, the protrusions being intended to be located between the upper part and the lower part, against a peripheral chamfer of the upper part; a support located below and at a distance from the, protrusions so as to gravitationally receive the lower part when the fracturable assembly is separated, and to keep it at a distance from the upper part held by the protrusions.

公开(公告)号：US20210028036A1

公开(公告)日：2021-01-28

申请号：US17042755

申请日：2019-03-22

Applicant: Soitec ,  Commissariat A L'Energie Atomique et aux Énergies Alternatives

Inventor： François Rieutord ,  Frédéric Mazen ,  Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/67 ,  H01L21/66 ,  G01N29/14 ,  G01N29/46

Abstract: A method for monitoring a heat treatment applied to a substrate comprising a weakened zone formed by implanting atomic species for splitting the substrate along the weakened zone, the substrate being arranged in a heating chamber, the method comprising recording sound in the interior or in the vicinity of the heating chamber and detecting, in the recording, a sound emitted by the substrate during the splitting thereof along the weakened zone. A device for the heat treatment of a batch of substrates comprises an annealing furnace comprising a heating chamber intended to receive the batch, at least one microphone configured to record sounds in the interior or in the vicinity of the heating chamber, and a processing system configured to detect, in an audio recording produced by the microphone, a sound emitted when a substrate splits.

公开(公告)号：US09768057B2

公开(公告)日：2017-09-19

申请号：US15159646

申请日：2016-05-19

Applicant: Soitec

Inventor： Ludovic Ecarnot ,  Nicolas Daval ,  Nadia Ben Mohamed ,  Francois Boedt ,  Carole David ,  Isabelle Guerin

IPC: H01L21/66 ,  H01L21/762 ,  H01L21/02 ,  B28D5/00

CPC classification number: H01L21/76251 ,  B28D5/00 ,  H01L21/02002 ,  H01L21/76254

Abstract: A method for transferring a layer from a single-crystal substrate, called a donor substrate, onto a receiver substrate, includes supplying the single-crystal donor substrate, the substrate having a notch oriented in a first direction of the crystal and a weakness region bounding the layer to be transferred, bonding of the single-crystal donor substrate onto the receiver substrate, the main surface of the donor substrate opposite to the weakness region with respect to the layer to be transferred being at the bonding interface, and detachment of the donor substrate along the weakness region. In the method, the donor substrate has, on the main surface bonded to the receiver substrate, an array of atomic steps extending essentially in a second direction of the crystal different from the first direction.

公开(公告)号：US20160372361A1

公开(公告)日：2016-12-22

申请号：US14900257

申请日：2014-06-17

Applicant: SOITEC

Inventor： Nadia Ben Mohamed ,  Eric Maze

IPC: H01L21/762 ,  H01L21/02

CPC classification number: H01L21/76254 ,  H01L21/02236 ,  H01L21/30604

Abstract: A process for the manufacture of a composite structure includes the following stages: a) providing a donor substrate comprising a first surface and a support substrate; b) forming a zone of weakening in the donor substrate, the zone of weakening delimiting, with the first surface of the donor substrate, a working layer; c) assembling the support substrate and the donor substrate; d) fracturing the donor substrate along the zone of weakening; and e) thinning the working layer so as to form a thinned working layer. Stage b) is carried out so that the working layer exhibits a thickness profile appropriate for compensating for the nonuniformity in consumption of the working layer during stage e).

Abstract translation: 一种用于制造复合结构的方法包括以下阶段：a）提供包括第一表面和支撑衬底的施主衬底; b）在施主衬底中形成弱化区域，所述施主衬底的第一表面为工作层; c）组装支撑衬底和供体衬底; d）沿着弱化区域压裂施主衬底; 以及e）使工作层变薄以便形成变薄的工作层。 阶段b）进行，使得工作层呈现适于补偿阶段e）期间工作层的消耗不均匀性的厚度分布。

公开(公告)号：US12142517B2

公开(公告)日：2024-11-12

申请号：US17436532

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762

Abstract: A method for transferring a useful layer from a donor substrate to a carrier substrate comprises: a) providing the donor substrate, the donor substrate including a buried weakened plane; b) providing the carrier substrate; c) joining the donor substrate to the carrier substrate to form a bonded structure; and d) annealing the bonded structure in order to increase the level of weakening of the buried weakened plane. A predetermined stress is applied to the buried weakened plane during the annealing for a period of time, the predetermined stress being selected so as to initiate the splitting wave once a given level of weakening has been reached. At the end of the period of time, the given level of weakening having been reached, the predetermined stress causes initiation and self-sustained propagation of the splitting wave along the buried weakened plane, resulting in the useful layer being transferred to the carrier substrate.

公开(公告)号：US20240222158A1

公开(公告)日：2024-07-04

申请号：US18608134

申请日：2024-03-18

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/67 ,  H01L21/762

CPC classification number: H01L21/67092 ,  H01L21/67023 ,  H01L21/76254

Abstract: A system for fracturing a plurality of wafer assemblies, one of the wafers of each assembly comprising a plane of weakness and each assembly comprising a peripheral lateral groove comprises: a cradle for keeping the assemblies of the plurality of assemblies spaced apart and parallel to one another, along a storage axis; a separation device for applying separating forces in the peripheral groove of an assembly arranged in a fracture zone of the separating device, the separating force aiming to separate the wafers of the assembly from one another so as to initiate its fracture at the plane of weakness; and a drive device configured to move along the storage axis of the cradle opposite the separating device so as to successively place an assembly of the cradle in the fracture zone of the separation device.

公开(公告)号：US12002690B2

公开(公告)日：2024-06-04

申请号：US17435899

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/67 ,  H01L21/762

CPC classification number: H01L21/67092 ,  H01L21/67023 ,  H01L21/76254

Abstract: A system for fracturing a plurality of wafer assemblies, one of the wafers of each assembly comprising a plane of weakness and each assembly comprising a peripheral lateral groove comprises: a cradle for keeping the assemblies of the plurality of assemblies spaced apart and parallel to one another, along a storage axis; a separation device for applying separating forces in the peripheral groove of an assembly arranged in a fracture zone of the separating device, the separating force aiming to separate the wafers of the assembly from one another so as to initiate its fracture at the plane of weakness; and a drive device configured to move along the storage axis of the cradle opposite the separating device so as to successively place an assembly of the cradle in the fracture zone of the separation device.

公开(公告)号：US11881429B2

公开(公告)日：2024-01-23

申请号：US17439300

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762 ,  H01L21/265 ,  H01L21/78

CPC classification number: H01L21/76254 ,  H01L21/26506 ,  H01L21/7806

Abstract: A method for transferring a useful layer to a carrier substrate, includes the following steps: a) providing a donor substrate including a buried weakened plane; b) providing a carrier substrate; c) joining the donor substrate, by its front face, to the carrier substrate along a bonding interface so as to form a bonded structure; d) annealing the bonded structure in order to apply a weakening thermal budget thereto and to bring the buried weakened plane to a defined level of weakening; and e) initiating a splitting wave in the weakened plane by applying a stress to the bonded structure, the splitting wave self-propagating along the weakened plane to result in the useful layer being transferred to the carrier substrate. The splitting wave is initiated when the bonded structure is subjected to a temperature between 150° C. and 250° C.