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    Method of fabrication of an integrated thermoelectric converter, and integrated thermoelectric converter thus obtained
    21.
    发明授权
    Method of fabrication of an integrated thermoelectric converter, and integrated thermoelectric converter thus obtained 有权

    公开(公告)号：US11696504B2

    公开(公告)日：2023-07-04

    申请号：US17321252

    申请日：2021-05-14

    Applicant: STMICROELECTRONICS S.r.l.

    Inventor： Paolo Ferrari ,  Flavio Francesco Villa ,  Lucia Zullino ,  Andrea Nomellini ,  Luca Seghizzi ,  Luca Zanotti ,  Bruno Murari ,  Martina Scolari

    IPC: H10N10/855 ,  H10N10/01 ,  H10N10/17

    CPC classification number: H10N10/855 ,  H10N10/01 ,  H10N10/17

    Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

    Tensile stress measurement device with attachment plates and related methods
    24.
    发明授权
    Tensile stress measurement device with attachment plates and related methods 有权

    公开(公告)号：US10598578B2

    公开(公告)日：2020-03-24

    申请号：US15650380

    申请日：2017-07-14

    Applicant: STMicroelectronics S.r.l.

    Inventor： Alberto Pagani ,  Bruno Murari ,  Federico Giovanni Ziglioli

    IPC: G01N3/08 ,  H01L23/31 ,  G01L1/00 ,  G01N3/06 ,  G01L5/103

    Abstract: A tensile stress measurement device is to be attached to an object to be measured. The tensile stress measurement device may include an IC having a semiconductor substrate and tensile stress detection circuitry, the semiconductor substrate having opposing first and second attachment areas. The tensile stress measurement device may include a first attachment plate coupled to the first attachment area and extending outwardly to be attached to the object to be measured, and a second attachment plate coupled to the second attachment area and extending outwardly to be attached to the object to be measured. The tensile stress detection circuitry may be configured to detect a tensile stress imparted on the first and second attachment plates when attached to the object to be measured.

    Tensile Stress Measurement Device with Attachment Plates and Related Methods
    28.
    发明申请
    Tensile Stress Measurement Device with Attachment Plates and Related Methods 审中-公开

    公开(公告)号：US20170315035A1

    公开(公告)日：2017-11-02

    申请号：US15650380

    申请日：2017-07-14

    Applicant: STMicroelectronics S.r.l.

    Inventor： Alberto Pagani ,  Bruno Murari ,  Federico Giovanni Ziglioli

    IPC: G01N3/08 ,  H01L23/31 ,  G01N3/06

    CPC classification number: G01N3/08 ,  G01L1/005 ,  G01L5/103 ,  G01N3/066 ,  H01L23/3107

    Abstract: A tensile stress measurement device is to be attached to an object to be measured. The tensile stress measurement device may include an IC having a semiconductor substrate and tensile stress detection circuitry, the semiconductor substrate having opposing first and second attachment areas. The tensile stress measurement device may include a first attachment plate coupled to the first attachment area and extending outwardly to be attached to the object to be measured, and a second attachment plate coupled to the second attachment area and extending outwardly to be attached to the object to be measured. The tensile stress detection circuitry may be configured to detect a tensile stress imparted on the first and second attachment plates when attached to the object to be measured.

    Integrated electronic device for monitoring mechanical stress within a solid structure
    29.
    发明授权
    Integrated electronic device for monitoring mechanical stress within a solid structure 有权
    用于监测固体结构内的机械应力的集成电子装置

    公开(公告)号：US09464952B2

    公开(公告)日：2016-10-11

    申请号：US14108951

    申请日：2013-12-17

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Alberto Pagani ,  Federico Giovanni Ziglioli ,  Bruno Murari

    IPC: G01M5/00 ,  G01B5/30 ,  G01B7/16 ,  G01L1/00 ,  G01N3/00 ,  G01L1/18 ,  H01L27/20

    CPC classification number: G01L1/18 ,  H01L27/20

    Abstract: The integrated electronic device is for detecting a local parameter related to a force observed in a given direction, within a solid structure. The device includes at least one sensor configured to detect the above-mentioned local parameter at least in the given direction through piezo-resistive effect. At least one damping element, integrated in the device, is arranged within a frame-shaped region that is disposed around the at least one sensor and belongs to a substantially planar region comprising a plane passing through the sensor and perpendicular to the given direction. Such at least one damping element is configured to damp forces acting in the planar region and substantially perpendicular to the given direction.

    Abstract translation: 集成电子装置用于在固体结构内检测与在给定方向上观察到的力有关的局部参数。 该装置包括至少一个传感器，其配置成至少在给定方向上通过压阻效应来检测上述局部参数。 集成在装置中的至少一个阻尼元件布置在围绕至少一个传感器设置的框状区域中，并且属于基本上平面的区域，该区域包括通过传感器并垂直于给定方向的平面。 这样的至少一个阻尼元件构造成阻碍作用在平面区域中并基本垂直于给定方向的力。

    INTEGRATED ELECTRONIC DEVICE FOR MONITORING MECHANICAL STRESS WITHIN A SOLID STRUCTURE
    30.
    发明申请
    INTEGRATED ELECTRONIC DEVICE FOR MONITORING MECHANICAL STRESS WITHIN A SOLID STRUCTURE 有权
    用于在固体结构中监测机械应力的集成电子设备

    公开(公告)号：US20140182390A1

    公开(公告)日：2014-07-03

    申请号：US14108951

    申请日：2013-12-17

    Applicant: STMicroelectronics S.r.l.

    Inventor： Alberto PAGANI ,  Federico Giovanni Ziglioli ,  Bruno Murari

    IPC: G01L1/18 ,  H01L27/20

    CPC classification number: G01L1/18 ,  H01L27/20

    Abstract: The integrated electronic device is for detecting a local parameter related to a force observed in a given direction, within a solid structure. The device includes at least one sensor configured to detect the above-mentioned local parameter at least in the given direction through piezo-resistive effect. At least one damping element, integrated in the device, is arranged within a frame-shaped region that is disposed around the at least one sensor and belongs to a substantially planar region comprising a plane passing through the sensor and perpendicular to the given direction. Such at least one damping element is configured to damp forces acting in the planar region and substantially perpendicular to the given direction.

    Abstract translation: 集成电子装置用于在固体结构内检测与在给定方向上观察到的力有关的局部参数。 该装置包括至少一个传感器，其配置成至少在给定方向上通过压阻效应来检测上述局部参数。 集成在装置中的至少一个阻尼元件布置在围绕至少一个传感器设置的框状区域中，并且属于基本上平面的区域，该区域包括通过传感器并垂直于给定方向的平面。 这样的至少一个阻尼元件构造成阻碍作用在平面区域中并基本垂直于给定方向的力。

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