公开(公告)号：US20150295030A1

公开(公告)日：2015-10-15

申请号：US14660601

申请日：2015-03-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Nayera Ahmed ,  François Roy

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L21/76202 ,  H01L21/76205 ,  H01L21/76224 ,  H01L21/76227 ,  H01L21/76229 ,  H01L21/763

Abstract: A method of manufacturing an insulating trench including the successive steps of: a) forming, on a semiconductor substrate, a first masking structure including a layer of a first selectively-etchable material and etching a trench into the substrate; b) forming an insulating coating on the trench walls and filling the trench with doped polysilicon; c) forming a silicon oxide plug penetrating into the trench substantially all the way to the upper surface of the substrate and protruding above the upper surface of the substrate; and d) removing the layer of the first material.

Abstract translation: 一种制造绝缘沟槽的方法，包括以下连续步骤：a）在半导体衬底上形成包括第一可选蚀刻材料层的第一掩模结构，并将沟槽蚀刻到衬底中; b）在沟槽壁上形成绝缘涂层并用掺杂多晶硅填充沟槽; c）形成贯穿所述沟槽的氧化硅插塞，其基本上一直延伸到所述衬底的上表面并突出到所述衬底的上表面上方; 和d）去除第一材料的层。

公开(公告)号：US09099603B2

公开(公告)日：2015-08-04

申请号：US13858389

申请日：2013-04-08

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Vincent Fiori

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/02 ,  H01L27/146

CPC classification number: H01L31/18 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14687 ,  H01L27/1469 ,  H01L31/02 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing an image sensor, including the steps of: forming elementary structures of an image sensor on the first surface of a semiconductor substrate; installing a layer on the first surface; defining trenches in the layer, the trenches forming a pattern in the layer; and installing, on a hollow curved substrate, the obtained device on the free surface side of the layer, the pattern being selected according to the shape of the support surface.

Abstract translation: 一种用于制造图像传感器的方法，包括以下步骤：在半导体衬底的第一表面上形成图像传感器的元件结构; 在第一个表面上安装一层; 在层中限定沟槽，沟槽在层中形成图案; 并且将所获得的装置安装在空心弯曲基板上的层的自由表面侧上，根据支撑表面的形状来选择图案。

公开(公告)号：US09236407B2

公开(公告)日：2016-01-12

申请号：US14144168

申请日：2013-12-30

Applicant: STMicroelectronics S.A. ,  Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： François Roy ,  Yvon Cazaux

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14656

Abstract: An image sensor arranged inside and on top of a semiconductor substrate, having a plurality of pixels, each including: a photosensitive area, a read area, and a storage area extending between the photosensitive area and the read area; at least one first insulated vertical electrode extending in the substrate between the photosensitive area and the storage area; and at least one second insulated vertical electrode extending in the substrate between the storage area and the read area.

Abstract translation: 布置在半导体衬底的内部和顶部的具有多个像素的图像传感器，每个像素包括：感光区域，读取区域和在感光区域和读取区域之间延伸的存储区域; 至少一个第一绝缘垂直电极，其在所述基板中在所述光敏区域和所述存储区域之间延伸; 以及在所述存储区域和所述读取区域之间的所述衬底中延伸的至少一个第二绝缘垂直电极。

公开(公告)号：US08994138B2

公开(公告)日：2015-03-31

申请号：US13710260

申请日：2012-12-10

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles2) SAS

Inventor： François Roy ,  Sebastien Place

IPC: H01L27/146 ,  H01L31/18 ,  H04N5/76

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/1463 ,  H01L31/18 ,  H04N5/76

Abstract: An image sensor including a pixel array, each pixel including, in a substrate of a doped semiconductor material of a first conductivity type, a first doped region of a second conductivity type at the surface of the substrate; an insulating trench surrounding the first region; a second doped region of the first conductivity type, more heavily doped than the substrate, at the surface of the substrate and surrounding the trench; a third doped region of the second conductivity type, forming with the substrate a photodiode junction, extending in depth into the substrate under the first and second regions and being connected to the first region; and a fourth region, more lightly doped than the second and third regions, interposed between the second and third regions and in contact with the first region and/or with the third region.

Abstract translation: 一种图像传感器，包括像素阵列，每个像素包括在第一导电类型的掺杂半导体材料的衬底中，在衬底的表面处具有第二导电类型的第一掺杂区域; 围绕所述第一区域的绝缘沟槽; 第一导电类型的第二掺杂区域，在衬底的表面上比衬底更重掺杂并且围绕沟槽; 第二导电类型的第三掺杂区域，与衬底一起形成光电二极管结，在第一和第二区域下方深度延伸到衬底中，并连接到第一区域; 以及介于所述第二和第三区域之间并与所述第一区域和/或与所述第三区域接触的比所述第二和第三区域更轻掺杂的第四区域。

公开(公告)号：US20130155283A1

公开(公告)日：2013-06-20

申请号：US13710260

申请日：2012-12-10

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles2) SAS

Inventor： François Roy ,  Sebastien Place

IPC: H01L27/146 ,  H04N5/76 ,  H01L31/18

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/1463 ,  H01L31/18 ,  H04N5/76

Abstract: An image sensor including a pixel array, each pixel including, in a substrate of a doped semiconductor material of a first conductivity type, a first doped region of a second conductivity type at the surface of the substrate; an insulating trench surrounding the first region; a second doped region of the first conductivity type, more heavily doped than the substrate, at the surface of the substrate and surrounding the trench; a third doped region of the second conductivity type, forming with the substrate a photodiode junction, extending in depth into the substrate under the first and second regions and being connected to the first region; and a fourth region, more lightly doped than the second and third regions, interposed between the second and third regions and in contact with the first region and/or with the third region.

Abstract translation: 一种图像传感器，包括像素阵列，每个像素包括在第一导电类型的掺杂半导体材料的衬底中，在衬底的表面处具有第二导电类型的第一掺杂区域; 围绕所述第一区域的绝缘沟槽; 第一导电类型的第二掺杂区域，在衬底的表面上比衬底更重掺杂并且围绕沟槽; 第二导电类型的第三掺杂区域，与衬底一起形成光电二极管结，在第一和第二区域下方深度延伸到衬底中，并连接到第一区域; 以及介于所述第二和第三区域之间并与所述第一区域和/或与所述第三区域接触的比所述第二和第三区域更轻掺杂的第四区域。

公开(公告)号：US20140183685A1

公开(公告)日：2014-07-03

申请号：US14144168

申请日：2013-12-30

Applicant: Commissariat à I'Énergie Atomique et aux Énergies Alternatives ,  STMicroelectronics S.A.

Inventor： François Roy ,  Yvon Cazaux

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14656

Abstract: An image sensor arranged inside and on top of a semiconductor substrate, having a plurality of pixels, each including: a photosensitive area, a read area, and a storage area extending between the photosensitive area and the read area; at least one first insulated vertical electrode extending in the substrate between the photosensitive area and the storage area; and at least one second insulated vertical electrode extending in the substrate between the storage area and the read area.

Abstract translation: 布置在半导体衬底的内部和顶部的具有多个像素的图像传感器，每个像素包括：感光区域，读取区域和在感光区域和读取区域之间延伸的存储区域; 至少一个第一绝缘垂直电极，其在所述基板中在所述光敏区域和所述存储区域之间延伸; 以及在所述存储区域和所述读取区域之间的所述衬底中延伸的至少一个第二绝缘垂直电极。