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21.发明申请INTEGRATED TRANSDUCER PROVIDED WITH A TEMPERATURE SENSOR AND METHOD FOR SENSING A TEMPERATURE OF THE TRANSDUCER 有权用温度传感器提供的集成式传感器和传感器温度传感器的方法公开(公告)号：US20130215931A1
公开(公告)日：2013-08-22
申请号：US13757146
申请日：2013-02-01
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Mario Chiricosta , Mario Maiore , Lorenzo Baldo , Paul Georges Marie Rose
IPC: G01K7/01
CPC classification number: G01L19/0092 , G01K7/01 , G01L9/0054 , G01L9/065
Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.
Abstract translation: 压力传感器包括由具有第一类型导电性的半导体材料制成的主体和具有限定悬浮膜的第一类型导电性的压敏结构。 在悬浮膜中形成具有第二类导电性（P）的一个或多个压电元件。 压敏元件与压敏结构形成各自的结二极管。 温度检测方法包括：在连接二极管公共的导通端子之间产生第一电流; 当提供所述第一电流时，检测所述公共导通端子之间的第一电压值; 并将检测到的第一电压值与二极管的温度值相关联。 这样计算的温度值可用于校正当压力传感器输出时产生的电压信号，该压力传感器用于感测施加的使悬浮膜变形的外部压力。
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22.发明授权公开(公告)号：US11805223B2
公开(公告)日：2023-10-31
申请号：US17745465
申请日：2022-05-16
Applicant: STMicroelectronics S.r.l.
Inventor： Pierpaolo Lombardo , Michele Vaiana
Abstract: Current signals indicative of sensed physical quantities are collected from sensing transistors in an array of sensing transistors. The sensing transistors have respective control nodes and current channel paths therethrough between respective first nodes and a second node common to the sensing transistors. A bias voltage level is applied to the respective first nodes of the sensing transistors in the array and one sensing transistor in the array of sensing transistors is selected. The selected sensing transistor is decoupled from the bias voltage level, while the remaining sensing transistors in the array of sensing transistors maintain coupling to the bias voltage level. The respective first node of the selected sensing transistor in the array of sensing transistors is coupled to an output node, and an output current signal is collected from the output node.
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公开(公告)号：US11740136B2
公开(公告)日：2023-08-29
申请号：US17011723
申请日：2020-09-03
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Paolo Pesenti , Mario Chiricosta , Calogero Marco Ippolito , Mario Maiore
IPC: G01K3/14 , H03H17/02 , G01K7/02 , H03M3/00 , H03K19/003 , H03K19/018
CPC classification number: G01K3/14 , G01K7/02 , G01K7/021 , H03H17/02 , G01K2219/00 , H03K19/00307 , H03K19/01825 , H03M3/43 , H03M3/456 , H03M3/458
Abstract: A circuit includes a first input terminal, a second input terminal, a third input terminal and an output terminal. A first summation node adds signals at the first and third input terminals. A second summation node subtracts signals at the second and third input terminals. A selector selects between the added signals and subtracted signals in response to a selection signal. The output of the selector is integrated to generate an integrated signal. The integrated signal is compared by a comparator to a threshold, the comparator generating an output signal at the output terminal having a first level and a second level. Feedback of the output signal produces the selection signal causing the selector to select the added signals in response to the first level of the output signal and causing the selector to select the subtracted signals in response to the second level of the output signal.
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公开(公告)号：US11275100B2
公开(公告)日：2022-03-15
申请号：US16781598
申请日：2020-02-04
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Calogero Marco Ippolito , Angelo Recchia , Antonio Cicero , Pierpaolo Lombardo
Abstract: An amplification interface includes an input terminal receiving a sensor current and an output terminal supplying an output voltage. An analog integrator is connected to the input terminal and supplies the output voltage. A current generator is connected to the input of the analog integrator and generates a compensation current based on a drive signal. A control circuit generates the drive signal for the current generator based on a control signal representing an offset in the sensor current supplied by the sensor. The current generator generates, based on the driving signal, a positive or negative current. The control circuit determines a first duration and a second duration as a function of the control signal representing the offset in the sensor current, during the measurement interval, and sets the driving signal to a first logic value for the first duration and to a second logic value for the second duration.
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公开(公告)号：US20210314000A1
公开(公告)日：2021-10-07
申请号：US17211355
申请日：2021-03-24
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Michele Vaiana
IPC: H03M3/00
Abstract: An embodiment converter circuit comprises an analog-to-digital signal conversion path. An input port receives an analog input signal having an offset, and an output port delivers a digital output signal quantized over M levels. The digital output signal is sensed by a digital-to-analog feedback path which comprises a digital-to-analog converter applying to the input port an analog feedback signal produced as a function of an M-bit digital word under control of a two-state signal having alternating first and second states. M-bit digital word generation circuitry coupled to the digital-to-analog converter and sensitive to the two-state signal produces, alternately, during the first states, a first M-bit digital word which is a function of the digital output signal quantized over M levels, and, during the second states, a second M-bit digital word which is a function a correction value of the offset in the analog input signal.
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Patent Agency Ranking
公开(公告)号：US11035739B2
公开(公告)日：2021-06-15
申请号：US16921819
申请日：2020-07-06
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.
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公开(公告)号：US20210011569A1
公开(公告)日：2021-01-14
申请号：US17038546
申请日：2020-09-30
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Angelo Recchia , Antonio Cicero , Pierpaolo Lombardo , Michele Vaiana
Abstract: A touchscreen resistive sensor includes a network of resistive sensor branches coupled to a number of sensor nodes arranged at touch locations of the touchscreen. A test sequence is performed by sequentially applying to each sensor node a reference voltage level, jointly coupling to a common line the other nodes, sensing a voltage value at the common line, and declaring a short circuit condition as a result of the voltage value sensed at the common line reaching a short circuit threshold. A current value level flowing at the sensor node to which the reference voltage level is applied is sensed and a malfunction of the resistive sensor branch coupled with the sensor node to which a reference voltage level is applied is generated as a result of the current value sensed at the sensor node reaching an upper threshold or lower threshold.
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公开(公告)号：US20190316973A1
公开(公告)日：2019-10-17
申请号：US16356128
申请日：2019-03-18
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Michele Vaiana
Abstract: A circuit includes a first current source configured to produce a first current in a first current line through a first diode-connected transistor having a voltage drop across the first diode-connected transistor, the first current being proportional to an absolute temperature via a first proportionality factor; a second current source configured to produce a second current in a second current line through a second diode-connected transistor having a voltage drop across the second diode-connected transistor, the second current being proportional to the absolute temperature via a second proportionality factor; a third current source configured to produce a third current in a third current line through a third diode-connected transistor having a voltage drop across the third diode-connected transistor; and a processing network including a sigma-delta analog-to-digital converter, the processing network being coupled to the, the second, and the third diode-connected transistors.
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公开(公告)号：US20190250047A1
公开(公告)日：2019-08-15
申请号：US16394804
申请日：2019-04-25
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.
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30.发明授权Integrated transducer provided with a temperature sensor and method for sensing a temperature of the transducer 有权具有温度传感器的集成传感器和用于感测换能器温度的方法公开(公告)号：US09534974B2
公开(公告)日：2017-01-03
申请号：US13757146
申请日：2013-02-01
Applicant: STMicroelectronics S.r.l.
Inventor： Michele Vaiana , Mario Chiricosta , Mario Maiore , Lorenzo Baldo , Paul Georges Marie Rose
CPC classification number: G01L19/0092 , G01K7/01 , G01L9/0054 , G01L9/065
Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.
Abstract translation: 压力传感器包括由具有第一类型导电性的半导体材料制成的主体和具有限定悬浮膜的第一类型导电性的压敏结构。 在悬浮膜中形成具有第二类导电性（P）的一个或多个压电元件。 压敏元件与压敏结构形成各自的结二极管。 温度检测方法包括：在连接二极管公共的导通端子之间产生第一电流; 当提供所述第一电流时，检测所述公共导通端子之间的第一电压值; 并将检测到的第一电压值与二极管的温度值相关联。 这样计算的温度值可用于校正当压力传感器输出时产生的电压信号，该压力传感器用于感测施加的使悬浮膜变形的外部压力。
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