Display device and method of fabricating the same

    公开(公告)号:US09917117B2

    公开(公告)日:2018-03-13

    申请号:US15045985

    申请日:2016-02-17

    Inventor: Moo Soon Ko

    Abstract: A method of fabricating a display device including forming one or more thin-film transistors (“TFTs”) each configured to include an active layer, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode on a substrate. A storage capacitor including a first storage electrode and a second storage electrode overlapping the first storage electrode with the gate insulating layer interposed there between is also formed on the substrate. A top surface of the first storage electrode may include hillocks and the gate insulating layer is formed between the first storage electrode and the second storage electrode to conform to the shape of the top surface of the first storage electrode with the hillocks.

    Organic light-emitting diode (OLED) display and method for manufacturing the same
    23.
    发明授权
    Organic light-emitting diode (OLED) display and method for manufacturing the same 有权
    有机发光二极管(OLED)显示器及其制造方法

    公开(公告)号:US09502486B2

    公开(公告)日:2016-11-22

    申请号:US15041903

    申请日:2016-02-11

    Abstract: An organic light-emitting diode (OLED) display having thin film transistors (TFTs) is disclosed. In one aspect, TFTs of the OLED display include a substrate and a first semiconductor layer formed over the substrate and including first channel, source, and drain regions and a lightly doped region between the first channel region and the first source and drain regions. The OLED display also includes a second semiconductor layer formed over the substrate and including second channel, source, and drain regions. The OLED display further includes first and second gate electrodes formed over the first semiconductor layer and a third gate electrode formed over the second semiconductor layer. The width of the second gate electrode is less than that of the first gate electrode and the lightly doped region overlaps a portion of the first gate electrode and does not overlap the second gate electrode.

    Abstract translation: 公开了一种具有薄膜晶体管(TFT)的有机发光二极管(OLED)显示器。 一方面,OLED显示器的TFT包括衬底和形成在衬底上的第一半导体层,并且包括第一沟道,源极和漏极区以及在第一沟道区和第一源极和漏极区之间的轻掺杂区。 OLED显示器还包括形成在衬底上并包括第二通道,源极和漏极区域的第二半导体层。 OLED显示器还包括形成在第一半导体层上的第一和第二栅电极和形成在第二半导体层上的第三栅电极。 第二栅电极的宽度小于第一栅电极的宽度,并且轻掺杂区域与第一栅电极的一部分重叠,并且不与第二栅电极重叠。

    Display device
    26.
    发明授权

    公开(公告)号:US11641767B2

    公开(公告)日:2023-05-02

    申请号:US17139485

    申请日:2020-12-31

    Abstract: A display device includes: a substrate comprising a first layer and a second layer; a first display area including a first pixel area on the substrate; a second display area including a second pixel area and a transparent area adjacent to each other on the substrate; and a blocking layer disposed in the second pixel area of the second display area, and disposed between a first layer and a second layer of the substrate in a side view, and the blocking layer including a metal blocks light.

    Display device and manufacturing method thereof

    公开(公告)号:US11581390B2

    公开(公告)日:2023-02-14

    申请号:US17143284

    申请日:2021-01-07

    Abstract: A display device including: a substrate; an active layer, and including channel and conductive regions; a first conductive layer including a driving gate electrode and a scan line in a first direction; a second conductive layer including a storage line; a third conductive layer including a first connecting member above the storage line; an insulating layer between the storage line and the first connecting member; and a data line and a driving voltage line crossing the scan line in a second direction, wherein the first connecting member electrically connects the driving gate electrode and a conductive region, the driving voltage line overlaps the first connecting member, the insulating layer includes first and second sub-insulating layers, and an edge of the second sub-insulating layer substantially overlaps an edge of the first connecting member in a thickness direction of the display device.

    DISPLAY DEVICE HAVING AN EMISSION LAYER

    公开(公告)号:US20220201162A1

    公开(公告)日:2022-06-23

    申请号:US17688107

    申请日:2022-03-07

    Abstract: A display device includes a substrate and an active pattern positioned above the substrate and including a plurality of channel regions and a plurality of conductive regions. The display device includes a plurality of scan lines extending substantially in a first direction. The display device includes a data line and a driving voltage line crossing the plurality of scan lines. The display device includes a first transistor including a first channel region among the plurality of channel regions and a first gate electrode. The display device includes a first connector electrically connecting the first gate electrode of the first transistor and a first conductive region among the plurality of conductive regions to each other. The driving voltage line overlaps at least a portion of the first connector along a direction orthogonal to an upper surface of the substrate.

    Display device and manufacturing method thereof

    公开(公告)号:US11107867B2

    公开(公告)日:2021-08-31

    申请号:US16556757

    申请日:2019-08-30

    Abstract: A display device includes a substrate, a switching transistor and a driving transistor positioned on the substrate, a first electrode connected to the driving transistor, a second electrode positioned on the first electrode, and a pixel definition layer positioned between the first electrode and the second electrode, where the pixel definition layer includes a first portion, and a second portion having a thickness less than that of the first portion, where a pixel opening defined in the pixel definition layer is enclosed by the first portion, and the second portion overlaps the first electrode and the second electrode.

    Display device including shared transistors among pixels

    公开(公告)号:US10886349B2

    公开(公告)日:2021-01-05

    申请号:US16058392

    申请日:2018-08-08

    Abstract: A display device includes a plurality of pixels. Each pixel includes a first transistor including a first gate electrode, a first source region, and a first drain region, a second transistor connected to the first source region of the first transistor, a third transistor connected to the first gate electrode and the first drain region of the first transistor, a fifth transistor connected to the first source region of the first transistor, and a sixth transistor connected to the first drain region of the first transistor. The pixels include a first pixel and a second pixel disposed adjacent to each other. The first and second pixels share a fourth transistor connected to the third transistor of the first pixel and the third transistor of the second pixel, and share a seventh transistor connected to the sixth transistor of the first pixel and the sixth transistor of the second pixel.

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