公开(公告)号：US09287436B2

公开(公告)日：2016-03-15

申请号：US13717914

申请日：2012-12-18

Applicant: SAMSUNG DISPLAY CO., LTD. ,  INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY ,  ULSAN COLLEGE INDUSTRY COOPERATION

Inventor： Sang Youn Han ,  Cheol Kyu Kim ,  Jun Ho Song ,  Sung Hoon Yang ,  Kyung Tea Park ,  Seung Mi Seo ,  Suk Won Jung ,  Do Young Kim ,  Sun Jo Kim ,  Hyung Jun Kim

IPC: H01L31/18 ,  H01L27/144 ,  H01L27/146

CPC classification number: H01L31/1812 ,  H01L27/1443 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14679

Abstract: A display device includes: a first substrate; a photo transistor on the first substrate; and a switching transistor connected to the photo transistor. The photo transistor includes a light blocking film on the first substrate, a first gate electrode on the light blocking film and in contact with the light blocking film, a first semiconductor layer on the first gate electrode and overlapping the light blocking film, and a first source electrode and a first drain electrode on the first semiconductor layer. The switching transistor includes a second gate electrode on the first substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are at a same layer of the display device, and each includes crystalline silicon germanium.

Abstract translation: 一种显示装置，包括：第一基板; 第一基板上的光电晶体管; 以及连接到光电晶体管的开关晶体管。 所述光电晶体管包括在所述第一基板上的遮光膜，所述遮光膜上的与所述遮光膜接触的第一栅电极，所述第一栅电极上的与所述遮光膜重叠的第一半导体层， 源电极和第一半导体层上的第一漏电极。 开关晶体管包括在第一衬底上的第二栅极电极，在第二栅电极上的第二半导体层，并与第二栅电极重叠，第二源电极和第二漏电极在第二半导体层上。 第一半导体层和第二半导体层位于显示装置的相同层，并且各自包括晶体硅锗。

公开(公告)号：US11938741B2

公开(公告)日：2024-03-26

申请号：US17705566

申请日：2022-03-28

Applicant: Samsung Display Co., LTD.

Inventor： Min Kyu Kim ,  Hyung Jun Kim ,  Hong-Ju Mun

IPC: B41J2/21 ,  G06K15/02 ,  G06K15/10

CPC classification number: B41J2/2103 ,  G06K15/102 ,  G06K15/1848

Abstract: An inkjet printing method includes: preparing a shape drawing; creating an image for an inkjet printing based on a color table or a boundary table; applying the image for the inkjet printing to an inkjet apparatus; and performing the inkjet printing based on the image by the inkjet apparatus, where the creating the image for the inkjet printing includes converting the shape drawing into a vector image, converting the vector image into a raster image, and converting the raster image into the image for the inkjet printing which is a black-and-white image.

公开(公告)号：US11626426B2

公开(公告)日：2023-04-11

申请号：US17109601

申请日：2020-12-02

Applicant: Samsung Display Co., Ltd.

Inventor： Kyung Jin Jeon ,  So Young Koo ,  Eok Su Kim ,  Hyung Jun Kim ,  Joon Seok Park ,  Jun Hyung Lim

IPC: H01L27/14 ,  H01L27/12 ,  H01L27/32

Abstract: A display device includes: a substrate; a first conductive layer on the substrate and comprising a first signal line; an insulating layer pattern on the first conductive layer; a semiconductor pattern on the insulating layer pattern; a gate insulating layer on the semiconductor pattern; and a second conductive layer comprising a gate electrode on the gate insulting layer and a first source/drain electrode and a second source/drain electrode, each on at least a part of the semiconductor pattern, wherein the insulating layer pattern and the semiconductor pattern have a same planar shape, the semiconductor pattern comprises a channel region overlapping the gate electrode, a first source/drain region on a first side of the channel region and a second source/drain region on a second side of the channel region, and the first source/drain electrode electrically connects the first source/drain region and the first signal line.

公开(公告)号：US11594559B2

公开(公告)日：2023-02-28

申请号：US17157184

申请日：2021-01-25

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok Park ,  So Young Koo ,  Eok Su Kim ,  Hyung Jun Kim ,  Sang Woo Sohn ,  Jun Hyung Lim ,  Kyung Jin Jeon

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12

Abstract: A display device may include a first gate electrode disposed on a substrate, a buffer layer disposed on the first gate electrode, a first active pattern on the buffer layer, the first active pattern overlapping the first gate electrode and including an oxide semiconductor, a second active pattern on the buffer layer, spaced apart from the first active pattern, and including an oxide semiconductor, the second active pattern including a channel region, and a source region and a drain region, a source pattern and a drain pattern respectively at ends of the first active pattern, a first insulation pattern disposed on the first active pattern, a second insulation pattern disposed on the channel region, a first oxygen supply pattern on the first insulation pattern, a second oxygen supply pattern on the second insulation pattern, and a second gate electrode on the second oxygen supply pattern.

公开(公告)号：US11521850B2

公开(公告)日：2022-12-06

申请号：US16440740

申请日：2019-06-13

Applicant: SAMSUNG DISPLAY CO., LTD ,  YONSEI UNIVERSITY, UNIVERSITY-INDUSTRY FOUNDATION (UIF)

Inventor： Jun Hyung Lim ,  Hyung Jun Kim ,  Sun Hee Lee ,  Seung Gi Seo ,  Whang Je Woo

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/49 ,  H01L29/24 ,  H01L29/786 ,  H01L29/16

Abstract: A method for manufacturing a semiconductor device according to an, exemplary embodiment of the present disclosure includes: forming a semiconductor layer on a substrate in a chamber; and forming a semiconductor layer on a substrate in a chamber. Forming the insulation layer includes: (a) injecting precursors that include a metal into a surface of the semiconductor layer; (b) removing precursors that are not adsorbed; (c) injecting reactants onto the surface of the semiconductor layer; and (d) removing residual reactants. The semiconductor layer includes a semiconductor material that has a layered structure.