公开(公告)号：US11581517B2

公开(公告)日：2023-02-14

申请号：US16837540

申请日：2020-04-01

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok Park ,  Yeon Keon Moon ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Hyung Jun Kim ,  Geun Chul Park ,  Sang Woo Sohn ,  Jun Hyung Lim ,  Kyung Jin Jeon ,  Hye Lim Choi

IPC: H01L51/56 ,  G09G3/3266 ,  G09G3/3291 ,  H01L29/786 ,  H01L29/49 ,  G09G3/325

Abstract: A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light-emitting element, a driving transistor to control a driving current supplied to the light-emitting element according to a data voltage applied from the data lines, and a switching transistor to apply the data voltage of the data line to the driving transistor according to a scan signal applied from the scan lines. The driving transistor includes a first active layer having an oxide semiconductor and a first gate electrode below the first active layer. The switching transistor includes a second active layer having a same oxide semiconductor as the oxide semiconductor of the first active layer and a second gate electrode below the second active layer. At least one of the driving transistor and the switching transistor includes an oxide layer above each of the active layers.

公开(公告)号：US20180040739A1

公开(公告)日：2018-02-08

申请号：US15662502

申请日：2017-07-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： SUNG WOOK WOO ,  Chang Ho Lee ,  Kyung Lae Rho ,  Doo Hyoung Lee ,  Sung Chan Jo ,  Sang Woo Sohn ,  Sang Won Shin ,  Soo Im Jeong ,  Chang Yong Jeong

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/10 ,  H01L29/04

CPC classification number: H01L29/78693 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.

公开(公告)号：US09543444B2

公开(公告)日：2017-01-10

申请号：US14487916

申请日：2014-09-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi Kishimoto ,  Yoshinori Tanaka ,  Yeon Keon Moon ,  Sang Woo Sohn ,  Sang Won Shin ,  Takayuki Fukasawa

IPC: H01L29/786 ,  H01L29/26 ,  H01J37/34

CPC classification number: H01L29/7869 ,  C23C14/3414 ,  H01J37/3429 ,  H01J37/3491 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78693

Abstract: An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.

Abstract translation: 氧化物溅射靶包括铟（In），锌（Zn），锡（Sn）和镓（Ga）以及钨（W）中的至少一种，其量为0.005mol％至1mol％。

公开(公告)号：US20150228797A1

公开(公告)日：2015-08-13

申请号：US14482413

申请日：2014-09-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeon Keon Moon ,  Sang Woo Sohn ,  Katsushi Kishimoto ,  Takayuki Fukasawa ,  Sang Won Shin

IPC: H01L29/786 ,  C23C14/08 ,  C23C14/34 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7869 ,  C23C14/083 ,  C23C14/086 ,  C23C14/3464 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/66969

Abstract: A thin film transistor array panel includes a substrate and a gate line disposed on the substrate, The gate line includes a gate electrode. A gate insulating layer is disposed on the gate line. An oxide semiconductor layer is disposed on the gate insulating layer. The oxide semiconductor layer at least partially overlaps the gate electrode. A data line is disposed on the oxide semiconductor layer. The data line includes a source electrode and a drain electrode facing the source electrode. The oxide semiconductor layer includes tungsten, indium, zinc, or tin.

Abstract translation: 薄膜晶体管阵列面板包括衬底和设置在衬底上的栅极线。栅极线包括栅电极。 栅极绝缘层设置在栅极线上。 氧化物半导体层设置在栅极绝缘层上。 氧化物半导体层至少部分地与栅电极重叠。 数据线设置在氧化物半导体层上。 数据线包括面对源电极的源电极和漏电极。 氧化物半导体层包括钨，铟，锌或锡。

公开(公告)号：US11930670B2

公开(公告)日：2024-03-12

申请号：US17313046

申请日：2021-05-06

Applicant: Samsung Display Co., Ltd. ,  Industry-University Cooperation Foundation Hanyang University ERICA Campus

Inventor： Sang Woo Sohn ,  Saeroonter Oh ,  Joon Seok Park ,  Young Joon Choi ,  Su Hyun Kim ,  Jun Hyung Lim

IPC: H10K59/126 ,  G09G3/3225 ,  H10K59/131 ,  H10K71/00

CPC classification number: H10K59/126 ,  G09G3/3225 ,  H10K59/131 ,  H10K71/00

Abstract: A display device comprises a substrate; a driving transistor including a first active layer and a switching transistor including a second active layer, the first active layer and the second active layer being disposed on the substrate; a first gate insulating layer disposed on the first active layer of the driving transistor and the second active layer of the switching transistor; first and second gate electrodes disposed on the first gate insulating layer to overlap the first active layer of the driving transistor and the second active layer of the switching transistor, respectively; a first interlayer insulating layer disposed on the first gate electrode and the second gate electrode; and a second interlayer insulating layer disposed on the first interlayer insulating layer to overlap the first active layer without overlapping the second active layer in a plan view.

公开(公告)号：US11271015B2

公开(公告)日：2022-03-08

申请号：US16876984

申请日：2020-05-18

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok Park ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Hyung Jun Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Sang Woo Sohn ,  Jun Hyung Lim ,  Kyung Jin Jeon ,  Hye Lim Choi

IPC: H01L27/12 ,  G02F1/1362 ,  H01L27/32

Abstract: A display device includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including an oxide semiconductor and a first active layer, a first gate insulating layer disposed on the first semiconductor layer and the buffer layer, a second semiconductor layer disposed on the first gate insulating layer and including an oxide semiconductor, a second active layer, and a first oxide layer on the first active layer, a second gate insulating layer disposed on the second semiconductor layer, a first conductive layer disposed on the second gate insulating layer, an insulating layer disposed on the first conductive layer, a second conductive layer disposed on the insulating layer, a passivation layer disposed on the second conductive layer, and a third conductive layer disposed on the first passivation layer.

公开(公告)号：US11138929B2

公开(公告)日：2021-10-05

申请号：US16850775

申请日：2020-04-16

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok Park ,  Yeon Keon Moon ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Hyung Jun Kim ,  Geun Chul Park ,  Sang Woo Sohn ,  Jun Hyung Lim ,  Kyung Jin Jeon ,  Hye Lim Choi

IPC: G09G3/3225 ,  G09G3/3275 ,  H01L27/32 ,  G09G3/3266 ,  H01L29/66 ,  H01L27/12 ,  H01L29/417 ,  H01L29/786 ,  H01L21/02

Abstract: A display device includes a pixel including a light emitting element connected to a scan line and a data line; a driving transistor that controls a driving current supplied to the light emitting element according to a data voltage applied from the data line. The driving transistor includes a first semiconductor layer, and a first gate electrode disposed on the first semiconductor layer. The display device includes a switching transistor that applies the data voltage to the driving transistor according to a scan signal applied to the scan line. The switching transistor includes a second semiconductor layer, and a second gate electrode disposed on the second semiconductor layer. The display device includes a light blocking layer and a first buffer layer disposed at a lower portion of the driving transistor. The light blocking layer and the first buffer layer do not overlap the switching transistor.

公开(公告)号：US10546959B2

公开(公告)日：2020-01-28

申请号：US15662502

申请日：2017-07-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sung Wook Woo ,  Chang Ho Lee ,  Kyung Lae Rho ,  Doo Hyoung Lee ,  Sung Chan Jo ,  Sang Woo Sohn ,  Sang Won Shin ,  Soo Im Jeong ,  Chang Yong Jeong

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L29/10

Abstract: A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.

公开(公告)号：US10032927B2

公开(公告)日：2018-07-24

申请号：US15374189

申请日：2016-12-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi Kishimoto ,  Yoshinori Tanaka ,  Yeon Keon Moon ,  Sang Woo Sohn ,  Sang Won Shin ,  Takayuki Fukasawa

IPC: H01L29/786 ,  H01L29/26 ,  H01J37/34 ,  H01L29/66 ,  C23C14/34 ,  H01L29/417

Abstract: An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.

公开(公告)号：US11793044B2

公开(公告)日：2023-10-17

申请号：US16704437

申请日：2019-12-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dong Min Lee ,  Sang Woo Sohn ,  Do Keun Song ,  Sang Won Shin ,  Hyun Eok Shin ,  Su Kyoung Yang ,  Kyeong Su Ko ,  Sang Gab Kim ,  Joon Geol Lee

IPC: H10K59/131 ,  H01L27/12 ,  H01L21/02

CPC classification number: H10K59/1315 ,  H01L27/1259 ,  H01L21/02068

Abstract: Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.