Abstract:
A display device includes a substrate, a first electrode disposed on the substrate, a bonding electrode disposed on the first electrode and electrically connected to the first electrode, a light emitting element disposed on the bonding electrode and including a first end contacting with the bonding electrode, and a second end disposed opposite to the first end in a longitudinal direction, a first insulating layer covering a side surface of the light emitting element and not covering the second end of the light emitting element such that the second end of the light emitting element is exposed, a second electrode covering the first insulating layer and the second end of the light emitting element, a first bank disposed on a portion of the second electrode, and a second bank disposed on the first bank, and the first bank and the second bank include metal.
Abstract:
A display device includes a substrate, a pixel electrode disposed on the substrate, a bank covering an edge of the pixel electrode and defining a light-emitting area, a first organic layer disposed on the bank and non-overlapping the light-emitting area, a plurality of light-emitting elements arranged on the pixel electrode, where each of the plurality of light-emitting elements extends perpendicular to the pixel electrode, a planarization layer disposed on the pixel electrode, the bank and the first organic layer, where the planarization layer is filled between the plurality of light-emitting elements, and a common electrode disposed on the planarization layer and the plurality of light-emitting elements, where the first organic layer is disposed between the bank and the planarization layer, and overlaps the bank.
Abstract:
A thin film transistor array panel, including a substrate; a gate electrode on the substrate; a semiconductor layer on the substrate; a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a first oxide insulating layer in contact with the semiconductor layer; a source electrode on the semiconductor layer; a drain electrode facing the source electrode; and a passivation layer covering the source electrode and the drain electrode, the passivation layer including a second oxide insulating layer in contact with the source electrode and the drain electrode, at least one of the first oxide insulating layer and the second oxide insulating layer having a varying hydrogen content distribution in a thickness direction.
Abstract:
There is provided a method of manufacturing an oxide thin film transistor (TFT). The method includes forming a gate electrode on a substrate, forming a gale insulating layer on the gate electrode, forming an oxide semiconductor layer including a channel layer on the gate insulating layer, forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer, first plasma processing the substrate on which the source electrode and the drain electrode are formed at a carbon (C) atmosphere, secondly plasma processing the substrate al a nitrogen oxide atmosphere, and sequentially forming a first protective layer and a second protective layer on the substrate.
Abstract:
Provided are a display device and a method for manufacturing the same. According to one or more embodiments of the present disclosure, the display device includes a substrate, a pixel electrode above the substrate, an organic layer above the pixel electrode, a light-emitting element above the organic layer, and including a contact electrode in contact with the organic layer, and a connection electrode connected to the pixel electrode and to the contact electrode, on a side surface of the organic layer, and on a side surface of the contact electrode.
Abstract:
The present disclosure may provide a display device and a method for manufacturing the same. According to one or more embodiments, a display device includes a pixel electrode above a substrate, a light-emitting element above the pixel electrode, and including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer in sequence, the third semiconductor layer defining a recess exposing a portion of the second semiconductor layer, a via layer above the substrate, and surrounding at least a portion of the light-emitting element, and a common electrode above the light-emitting element and the via layer, and directly contacting the second semiconductor layer through the recess.
Abstract:
A display device includes a pixel electrode on a substrate, a bank layer on the substrate and the pixel electrode and dividing a light emitting area and a light non-emitting area, light emitting elements on the pixel electrode and including a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers, a first via layer on the pixel electrode and around sides of the light emitting elements, a common electrode on the first via layer, a side of a light emitting element protruding from the first via layer, and a top surface of the light emitting element, a first insulating layer on the common electrode, a partition wall unit on the first insulating layer and overlapping the bank layer, a second insulating layer on the partition wall unit, and a reflective layer around a side of the partition wall unit.
Abstract:
A display device includes anode electrodes spaced apart from each other on a substrate, light emitting elements on the anode electrodes, mask layers on some of the light emitting elements, an insulating layer on the substrate and the anode electrodes and surrounding the light emitting elements, and a cathode electrode on the insulating layer and contacting some of the light emitting elements and the mask layers, the light emitting elements include first light emitting elements on a first anode electrode and emitting light of a first color, and second light emitting elements on the first anode electrode and emitting light of a second color, and third light emitting elements on the first anode electrode and emitting light of a third color, and the mask layer includes a first mask layer on the second light emitting elements, and a second mask layer on the third light emitting elements.
Abstract:
There is provided a display device including a base substrate, a conductive connection layer on the base substrate, a partitioning wall on the conductive connection layer, and a light emitting element on the conductive connection layer and in a space surrounded by the partitioning wall in a plan view, wherein the conductive connection layer includes a first portion overlapping the partitioning wall and the light emitting element, and a second portion not overlapping the partitioning wall and the light emitting element, an electrical conductivity of the first portion being greater than an electrical conductivity of the second portion.
Abstract:
There is provided a display device including a substrate, a partition wall on the substrate, a light-emitting element on the substrate in a light-emitting area partitioned by the partition wall, and extending in a thickness direction of the substrate, a light conversion layer on the light-emitting element in the light-emitting area, and configured to convert a wavelength of light emitted from the light-emitting element or to transmit the light, and an optical member including an optical pattern on the partition wall, and an optical layer on the light conversion layer, wherein a refractive index of the optical layer and a refractive index of the optical pattern are different from each other.