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    DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF 有权
    显示装置及其制造方法

    公开(公告)号：US20160379997A1

    公开(公告)日：2016-12-29

    申请号：US15175839

    申请日：2016-06-07

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jung Yun JO ,  Su Bin BAE ,  Sang Hyeon SONG ,  Cheol Geun AN

    IPC: H01L27/12 ,  G06F3/041

    CPC classification number: H01L27/124 ,  G06F3/0416 ,  G06F2203/04103 ,  H01L27/1262

    Abstract: An exemplary embodiment of the described technology relates generally to a display apparatus including a plurality of pixels and corresponding to one area of a substrate for displaying an image, and a pad area corresponding to another area of the substrate, the pad area including a lower electrode configured to transmit an electric signal to the pixels, and a plurality of pad electrodes electrically connecting the lower electrode and a driving chip, wherein each of the pad electrodes includes a first contact surface for contacting the lower electrode, a second contact surface for contacting the driving chip, and an oxide layer on a surface of the pad electrode that is exposed to the outside, and that connects the first contact surface and the second contact surface.

    Abstract translation: 所描述的技术的示例性实施例一般涉及包括多个像素并且对应于用于显示图像的基板的一个区域的显示装置以及对应于该基板的另一个区域的焊盘区域，该焊盘区域包括下部电极 被配置为向所述像素发送电信号，以及电连接所述下电极和驱动芯片的多个焊盘电极，其中每个焊盘电极包括用于接触所述下电极的第一接触表面，用于接触所述下电极的第二接触表面 驱动芯片和暴露于外部的焊盘电极的表面上的氧化物层，并且连接第一接触表面和第二接触表面。

    METHOD OF MANUFACTURING OXIDE THIN FILM TRANSISTOR
    3.
    发明申请
    METHOD OF MANUFACTURING OXIDE THIN FILM TRANSISTOR 审中-公开
    氧化物薄膜晶体管的制造方法

    公开(公告)号：US20160211353A1

    公开(公告)日：2016-07-21

    申请号：US14966125

    申请日：2015-12-11

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jung Yun JO ,  Su Bin BAE ,  Ki Seong SEO

    IPC: H01L29/66 ,  H01L29/45 ,  H01L29/786 ,  H01L29/24 ,  H01L21/475 ,  H01L21/02

    CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/47635 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/7869

    Abstract: There is provided a method of manufacturing an oxide thin film transistor (TFT). The method includes forming a gate electrode on a substrate, forming a gale insulating layer on the gate electrode, forming an oxide semiconductor layer including a channel layer on the gate insulating layer, forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer, first plasma processing the substrate on which the source electrode and the drain electrode are formed at a carbon (C) atmosphere, secondly plasma processing the substrate al a nitrogen oxide atmosphere, and sequentially forming a first protective layer and a second protective layer on the substrate.

    Abstract translation: 提供一种制造氧化物薄膜晶体管（TFT）的方法。 该方法包括在衬底上形成栅电极，在栅电极上形成一绝热层，在栅极绝缘层上形成包括沟道层的氧化物半导体层，形成在其上分离的源极和漏电极 氧化半导体层，在碳（C）气氛下对其上形成有源电极和漏电极的基板进行等离子体处理，其次，在氮氧化物气氛下等离子体处理基板，依次形成第一保护层和第二保护层 层。

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权

    公开(公告)号：US20210359136A1

    公开(公告)日：2021-11-18

    申请号：US17149164

    申请日：2021-01-14

    Applicant: Samsung Display Co., LTD.

    Inventor： Ji Hye HAN ,  Jung Yun JO ,  Chul Min BAE

    IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12

    Abstract: A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.

    LIQUID CRYSTAL DISPLAY DEVICE
    6.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
    液晶显示装置

    公开(公告)号：US20160223872A1

    公开(公告)日：2016-08-04

    申请号：US14808570

    申请日：2015-07-24

    Applicant: Samsung Display Co., Ltd.

    Inventor： Woo-Seok JEON ,  Sung Hoon YANG ,  Chang Ok KIM ,  Jung Yun JO

    IPC: G02F1/1343 ,  G02F1/1333 ,  G02F1/1368 ,  H01L27/12 ,  G02F1/1362

    CPC classification number: G02F1/134309 ,  G02F1/133345 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1248

    Abstract: A liquid crystal display device includes a substrate; a gate line and a data line positioned on the substrate; a thin film transistor connected to the gate line and the data line; a passivation layer positioned on the gate line, the data line, and the thin film transistor; a first electrode positioned on the passivation layer; an interlayer insulating layer positioned on the first electrode; and a second electrode positioned on the interlayer insulating layer, wherein the first electrode includes a first layer made of an indium-zinc oxide in which a weight ratio of an indium oxide is 20 wt % or less or made of a transparent metal oxide that does not contain an indium oxide.

    Abstract translation: 液晶显示装置包括：基板; 位于基板上的栅极线和数据线; 连接到栅极线和数据线的薄膜晶体管; 位于栅极线，数据线和薄膜晶体管上的钝化层; 位于所述钝化层上的第一电极; 位于所述第一电极上的层间绝缘层; 以及位于所述层间绝缘层上的第二电极，其中，所述第一电极包括由氧化铟重量比为20重量％以下或由透明金属氧化物构成的铟 - 锌氧化物制成的第一层， 不含氧化铟。

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20220013595A1

    公开(公告)日：2022-01-13

    申请号：US17349530

    申请日：2021-06-16

    Applicant: Samsung Display Co., LTD.

    Inventor： Jung Yun JO ,  Ji Hye HAN

    IPC: H01L27/32 ,  H01L51/56

    Abstract: A display device includes a substrate including pixels; a buffer layer disposed on the substrate; an etch stopper layer disposed between the substrate and the buffer layer; and at least one penetrating-hole penetrating the substrate, the buffer layer, and the etch stopper layer, wherein the etch stopper layer includes amorphous carbon.

    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
    10.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 审中-公开
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20160204266A1

    公开(公告)日：2016-07-14

    申请号：US14879283

    申请日：2015-10-09

    Applicant: Samsung Display CO., Ltd.

    Inventor： Ki Seong SEO ,  Jung Yun JO

    IPC: H01L29/786 ,  H01L23/31 ,  H01L21/425 ,  H01L29/66 ,  H01L29/423 ,  H01L29/24 ,  H01L23/29

    CPC classification number: H01L29/7869 ,  H01L21/425 ,  H01L23/291 ,  H01L23/3171 ,  H01L27/1248 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A thin film transistor array panel and method of manufacturing. The thin film transistor array panel includes a substrate, a first gate electrode positioned on the substrate, a gate insulating layer positioned on the first gate, an oxide semiconductor positioned on the gate insulating layer and including a channel region, at least one etch stopper positioned on the oxide semiconductor, a second gate electrode, a source electrode and a drain electrode positioned on the at least one etch stopper, a passivation layer formed on the second gate electrode, the source electrode and the drain electrode; and a pixel electrode positioned on the passivation layer and connected to the drain electrode, in which the oxide semiconductor includes an N+ region formed in a portion exposed through the at least one etch stopper.

    Abstract translation: 一种薄膜晶体管阵列面板及其制造方法。 薄膜晶体管阵列面板包括基板，位于基板上的第一栅极电极，位于第一栅极上的栅极绝缘层，位于栅极绝缘层上并包括沟道区域的氧化物半导体，至少一个位于 在所述氧化物半导体上，位于所述至少一个蚀刻停止器上的第二栅电极，源电极和漏电极，形成在所述第二栅电极，所述源电极和所述漏电极上的钝化层; 以及位于所述钝化层上并连接到所述漏电极的像素电极，其中所述氧化物半导体包括形成在暴露于所述至少一个蚀刻停止件的部分中的N +区域。

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