公开(公告)号：US09035296B2

公开(公告)日：2015-05-19

申请号：US13893817

申请日：2013-05-14

Applicant: Samsung Display Co., Ltd.

Inventor： Seohong Jung ,  Sun Hee Lee ,  Seung-Hwan Cho ,  Myounggeun Cha ,  Yoonho Khang ,  Youngki Shin

IPC: H01L29/786

CPC classification number: H01L29/78621 ,  H01L29/7869

Abstract: A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer.

Abstract translation: 薄膜晶体管包括设置在基底基板上的半导体层，其包括分别从半导体层的相对端延伸的氧化物半导体材料，源电极和漏电极，分别设置在半导体层之间的多个低载流子浓度区域 源电极和半导体层之间以及在漏极和半导体层之间，设置在半导体层上的栅极绝缘层和设置在栅极绝缘层上的栅电极。

公开(公告)号：US12238992B2

公开(公告)日：2025-02-25

申请号：US17825724

申请日：2022-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Soyoung Koo ,  Donghwan Shim ,  Sanggun Choi

IPC: H10K59/131 ,  H10K59/12 ,  H10K71/00

Abstract: A display device includes a first pixel and a second pixel. A light emitting element and a pixel circuit of the second pixel are in a second area. The first pixel includes a silicon transistor and an oxide transistor in the second area. The first pixel includes a connection line that electrically connects one of the silicon transistor and the oxide transistor to a light emitting element in a first area. The connection line is on the same layer as the oxide semiconductor pattern and includes a transparent conductive oxide.

公开(公告)号：US20240334740A1

公开(公告)日：2024-10-03

申请号：US18739329

申请日：2024-06-11

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Jiyeong Shin ,  Kiseok Choi

IPC: H10K59/121 ,  H01L27/12 ,  H01L29/786 ,  H10K59/124 ,  H10K59/126 ,  H10K59/65 ,  H10K77/10 ,  H10K102/00

CPC classification number: H10K59/121 ,  H10K59/1213 ,  H10K59/124 ,  H10K59/126 ,  H10K59/65 ,  H10K77/111 ,  H01L27/1222 ,  H01L29/78633 ,  H01L29/78675 ,  H10K2102/311

Abstract: Provided are a display panel and an electronic apparatus including the display panel. The display panel includes a substrate including a polymer resin; first and second pixel circuits each including a thin-film transistor, a first light-emitting diode connected to the first pixel circuit and located in a first display area; a second light-emitting diode connected to the second pixel circuit and located in a sub-display area of a second display area, a bottom metal layer in the second display area and between the substrate and the second pixel circuit; and a protective layer between the substrate and the bottom metal layer and corresponding to the first and second display areas, wherein the bottom metal layer includes a first opening in a transmissive area, and the protective layer includes a second opening in the transmissive area and overlapping the first opening of the bottom metal layer.

公开(公告)号：US12048196B2

公开(公告)日：2024-07-23

申请号：US17565146

申请日：2021-12-29

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Jiyeong Shin ,  Kiseok Choi

IPC: H10K59/121 ,  H10K59/124 ,  H10K59/126 ,  H10K59/65 ,  H10K77/10 ,  H01L27/12 ,  H01L29/786 ,  H10K102/00

CPC classification number: H10K59/121 ,  H10K59/1213 ,  H10K59/124 ,  H10K59/126 ,  H10K59/65 ,  H10K77/111 ,  H01L27/1222 ,  H01L29/78633 ,  H01L29/78675 ,  H10K2102/311

Abstract: Provided are a display panel and an electronic apparatus including the display panel. The display panel includes a substrate including a polymer resin; first and second pixel circuits each including a thin-film transistor, a first light-emitting diode connected to the first pixel circuit and located in a first display area; a second light-emitting diode connected to the second pixel circuit and located in a sub-display area of a second display area, a bottom metal layer in the second display area and between the substrate and the second pixel circuit; and a protective layer between the substrate and the bottom metal layer and corresponding to the first and second display areas, wherein the bottom metal layer includes a first opening in a transmissive area, and the protective layer includes a second opening in the transmissive area and overlapping the first opening of the bottom metal layer.

公开(公告)号：US11705063B2

公开(公告)日：2023-07-18

申请号：US16897646

申请日：2020-06-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Hyena Kwak ,  Jiyeong Shin ,  Yongsu Lee ,  Kiseok Choi

IPC: G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  H10K59/131 ,  H10K59/121

CPC classification number: G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  H10K59/1213 ,  H10K59/131 ,  G09G2320/0233 ,  G09G2320/0257 ,  G09G2330/028 ,  H10K59/1216

Abstract: A display device includes a first transistor including a first channel region, a first gate electrode overlapping the first channel region, and a first electrode connected to a node receiving a driving voltage, a second transistor electrically connected to the first electrode of the first transistor, the second transistor including a second channel region and a second gate electrode overlapping the first channel region and receiving a scan signal, a light emitting element electrically connected to a second electrode of the first transistor, a first conductive line overlapping the first gate electrode with the first channel region in between and receiving a variable voltage different from the driving voltage, and a second conductive line overlapping the second gate electrode with the second channel region in between and receiving the scan signal.

公开(公告)号：US20230023524A1

公开(公告)日：2023-01-26

申请号：US17690129

申请日：2022-03-09

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Subin Bae ,  Dawoon Jung ,  Yugwang Jeong ,  Sungwon Cho ,  Myounggeun Cha ,  Sanggun Choi

IPC: H01L27/32 ,  H01L51/56

Abstract: A display device includes: a substrate including a display area including a first pixel area, a component area adjacent to the display area, and a non-display area adjacent to the display area, where the component area includes a second pixel area and a transmission area, and the non-display area includes a bending area; a first inorganic layer continuously arranged in the transmission area on the substrate, where a lower opening overlapping the bending area is defined through the first inorganic layer; a blocking layer on the first inorganic layer, a blocking layer opening overlapping the transmission area and an intermediate opening overlapping the lower opening are defined through the blocking layer; and a display element layer on the blocking layer, where the display element layer includes a first display element overlapping the first pixel area and a second display element overlapping the second pixel area.

公开(公告)号：US20220399407A1

公开(公告)日：2022-12-15

申请号：US17565146

申请日：2021-12-29

Applicant: Samsung Display Co., Ltd.

Inventor： Myounggeun Cha ,  Sanggun Choi ,  Jiyeong Shin ,  Kiseok Choi

IPC: H01L27/32 ,  H01L51/00 ,  H01L29/786 ,  H01L27/12

Abstract: Provided are a display panel and an electronic apparatus including the display panel. The display panel includes a substrate including a polymer resin; first and second pixel circuits each including a thin-film transistor, a first light-emitting diode connected to the first pixel circuit and located in a first display area; a second light-emitting diode connected to the second pixel circuit and located in a sub-display area of a second display area, a bottom metal layer in the second display area and between the substrate and the second pixel circuit; and a protective layer between the substrate and the bottom metal layer and corresponding to the first and second display areas, wherein the bottom metal layer includes a first opening in a transmissive area, and the protective layer includes a second opening in the transmissive area and overlapping the first opening of the bottom metal layer.

公开(公告)号：US10573698B2

公开(公告)日：2020-02-25

申请号：US14919666

申请日：2015-10-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungwon Lee ,  Yoonho Khang ,  Myounggeun Cha ,  Youngki Shin ,  Woonghee Jeong

IPC: H01L27/12 ,  H01L27/105 ,  H01L27/32 ,  H01L29/786 ,  G09G3/3233 ,  H01L29/66

Abstract: A transistor including a polysilicon layer on a base substrate and including a channel region, a first ion doping region, a second ion doping region, the channel region being between the first and second ion doping regions, an average size of the grains in the channel region being greater than that of the grains in the first and second ion doping regions, a first gate electrode insulated from and overlapping the channel region, a second gate electrode insulated from the first gate electrode and overlapping the channel region, an inter-insulating layer on the second gate electrode, a source electrode on the inter-insulating layer and connected to the first ion doping region, and a drain electrode on the inter-insulating layer and connected to the second ion doping region.

公开(公告)号：US09515154B2

公开(公告)日：2016-12-06

申请号：US14597563

申请日：2015-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongchan Lee ,  Yoonho Khang ,  Myounghwa Kim ,  Joonhwa Bae ,  Myounggeun Cha

IPC: H01L29/45 ,  H01L21/285 ,  H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/823418 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/28518 ,  H01L21/32053 ,  H01L27/1222 ,  H01L27/1274 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.

Abstract translation: 薄膜晶体管包括在基板上的多晶硅层，其包括第二和第三区域之间的第一区域。 在基板上形成多晶硅层，在第一和第三区域的多晶硅层上形成源电极和漏电极。 源电极和漏电极中的每一个包括与多晶硅层相邻的金属硅化物层。