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    SEMICONDUCTOR PACKAGE
    22.
    发明申请
    SEMICONDUCTOR PACKAGE 审中-公开

    公开(公告)号：US20200168558A1

    公开(公告)日：2020-05-28

    申请号：US16433439

    申请日：2019-06-06

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Yoon Seok SEO ,  Dae Hyun PARK ,  Sang Jong LEE ,  Chul Kyu KIM ,  Jae Hyun LIM

    IPC: H01L23/552 ,  H01L23/538 ,  H01L23/28

    Abstract: A semiconductor package includes: a frame having a first surface and a second surface opposing each other, and including a through-hole and a wiring structure connected to the first surface and the second surface; a connection structure disposed on the first surface of the frame and including a redistribution layer; a semiconductor chip disposed in the through-hole and including connection pads connected to the redistribution layer; an encapsulant encapsulating the semiconductor chip and covering the second surface of the frame; and a plurality of electrical connection metal members disposed on the second surface of the frame and connected to the wiring structure. The wiring structure includes a shielding wiring structure surrounding the through-hole, and the plurality of electrical connection metal members include a plurality of grounding electrical connection metal members connected to the shielding wiring structure.

    THIN-FILM CAPACITOR
    24.
    发明申请
    THIN-FILM CAPACITOR 审中-公开

    公开(公告)号：US20180061573A1

    公开(公告)日：2018-03-01

    申请号：US15479456

    申请日：2017-04-05

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Hyun Ho SHIN ,  Su Bong JANG ,  Seung Mo LIM ,  Sang Jong LEE

    IPC: H01G4/232 ,  H01G4/30

    CPC classification number: H01G4/232 ,  H01G4/306 ,  H01G4/33 ,  H01L28/60

    Abstract: A thin-film capacitor includes a body in which a plurality of dielectric layers and first and second electrode layers are alternately stacked on a substrate, first and second electrode pads are on external surfaces of the body, and a plurality of vias are within the body. Among the plurality of vias, a first via connects the first electrode layer and the first electrode pad, and a second via connects the second electrode layer and the second electrode pad. The first via and the second via are units each include a plurality of vias, and the first via unit and the second via unit are alternately disposed on an upper surface of the body.

    AXIAL FLUX PERMANENT MAGNET MOTOR
    27.
    发明申请
    AXIAL FLUX PERMANENT MAGNET MOTOR 审中-公开
    轴流永磁电机

    公开(公告)号：US20140175931A1

    公开(公告)日：2014-06-26

    申请号：US13780661

    申请日：2013-02-28

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Sang Jong LEE ,  Han Kyung BAE ,  Hee Soo YOON ,  Sung Jun LEEM

    IPC: H02K1/27

    CPC classification number: H02K21/24

    Abstract: An axial flux permanent magnet motor includes a shaft, a rotor extending from the shaft in a radial direction, the rotor being rotatably mounted on the shaft, a magnet part disposed on the rotor to face downwardly in an axial direction, the magnet part having N poles and S poles, alternately disposed in a circumferential direction, a support member extending from the shaft in a radial direction, the support member being disposed below the rotor in the axial direction, and an electromagnet part disposed on the support member to face the magnet part in the axial direction. An axial distance between facing surfaces of the magnet part and the electromagnet part repeatedly changes in the circumferential direction.

    Abstract translation: 轴向磁通永磁电动机包括轴，从轴向径向延伸的转子，转子可旋转地安装在轴上，磁体部分设置在转子上以在轴向方向上向下，磁体部分具有N 极轴和S极，沿圆周方向交替设置有从轴向径向延伸的支撑构件，支撑构件沿轴向设置在转子下方，以及电磁体部，其设置在支撑构件上以面对磁体 部分轴向。 磁铁部件和电磁铁部件的相对表面之间的轴向距离在圆周方向上反复变化。

    CAPACITOR COMPONENT
    28.
    发明公开
    CAPACITOR COMPONENT 审中-公开

    公开(公告)号：US20230343515A1

    公开(公告)日：2023-10-26

    申请号：US17884759

    申请日：2022-08-10

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Sang Jong LEE ,  Han KIM ,  Min Cheol PARK ,  Su Bong JANG

    IPC: H01G4/01 ,  H01G4/008 ,  H01G4/248

    CPC classification number: H01G4/01 ,  H01G4/008 ,  H01G4/248

    Abstract: A capacitor component includes a body including a capacitance formation portion including a plurality of unit devices including a first internal electrode, a first dielectric film surrounding the first internal electrode, and a second internal electrode surrounding the first dielectric film, and a molded portion surrounding the capacitance formation portion, first and second external electrodes respectively disposed on a first surface and a second surface of the body opposing each other in a first direction to be respectively connected to the first and second internal electrodes. Cross-sections perpendicular to the first direction of at least two of the plurality of unit devices have a polygonal shape.

    MULTILAYER CAPACITOR
    29.
    发明公开
    MULTILAYER CAPACITOR 审中-公开

    公开(公告)号：US20230197348A1

    公开(公告)日：2023-06-22

    申请号：US17702237

    申请日：2022-03-23

    Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

    Inventor： Tae Ho YUN ,  Su Bong JANG ,  Sang Jong LEE

    IPC: H01G4/30 ,  H01G4/012 ,  H01G4/12 ,  H01G4/008

    CPC classification number: H01G4/30 ,  H01G4/012 ,  H01G4/1218 ,  H01G4/008

    Abstract: A multilayer capacitor includes: a body including a stack structure in which a first internal electrode and a second internal electrode are stacked on each other interposing a dielectric layer therebetween; and first and second external electrodes disposed on the body to be respectively connected to the first internal electrode and the second internal electrode. One of the first internal electrode and the second internal electrode includes a recess portion disposed in one surface thereof, and providing a deviation in a distance between the first and second internal electrodes, TD indicates a thickness of a portion of the dielectric layer, based on a portion positioned on the one surface and not in the recess portion, TR indicates a recession depth of a portion positioned on the one surface and recessed by the recess portion, and (TR/TD) is greater than zero and less than (½).

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