公开(公告)号：US10778179B2

公开(公告)日：2020-09-15

申请号：US15788062

申请日：2017-10-19

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Tae Yoon Kim ,  Sang Kee Yoon ,  Chang Hyun Lim ,  Jong Woon Kim ,  Moon Chul Lee

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/17 ,  H03H9/13 ,  H03H3/02 ,  H01L41/053 ,  H01L41/29 ,  H01L41/31

Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

公开(公告)号：US10734968B2

公开(公告)日：2020-08-04

申请号：US15647660

申请日：2017-07-12

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Tae Yoon Kim ,  Dae Ho Kim ,  Chang Hyun Lim ,  Tae Hun Lee ,  Sang Kee Yoon ,  Jong Woon Kim ,  Won Han ,  Moon Chul Lee

IPC: H03H9/02 ,  H03H9/56 ,  H03H3/02 ,  H03H9/17 ,  H03H9/60 ,  H01L41/047 ,  H03H9/54

Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less.

公开(公告)号：US10554191B2

公开(公告)日：2020-02-04

申请号：US15623875

申请日：2017-06-15

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Chang Hyun Lim ,  Han Tae Kim ,  Tae Hun Lee ,  Tae Kyung Lee ,  Tae Yoon Kim

IPC: H03H9/15 ,  H01L41/09 ,  H01L41/053 ,  H01L41/047 ,  H03H9/10 ,  H03H9/64 ,  H03H9/00 ,  H01L41/277 ,  H03H9/17 ,  H03H3/02 ,  H01L41/23 ,  H01L41/25 ,  H03H9/02

Abstract: A bulk acoustic wave filter device and method thereof includes a first layer forming an air gap together with a substrate, a lower electrode disposed over the first layer, a piezoelectric layer disposed to cover a portion of the lower electrode, an upper electrode disposed over the piezoelectric layer, a frame layer disposed below the upper electrode, and a lower electrode reinforcing layer disposed on the lower electrode, other than portions in which the piezoelectric layer is disposed. The lower electrode reinforcing layer is formed by separating the lower electrode reinforcing layer from the upper electrode or the frame layer upon one of the upper electrode and the frame layer being formed.

公开(公告)号：US11595015B2

公开(公告)日：2023-02-28

申请号：US16992434

申请日：2020-08-13

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Tae Yoon Kim ,  Sang Kee Yoon ,  Chang Hyun Lim ,  Jong Woon Kim ,  Moon Chul Lee

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/17 ,  H03H9/13 ,  H01L41/053 ,  H01L41/29 ,  H01L41/31 ,  H03H3/02

Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

公开(公告)号：US11476833B2

公开(公告)日：2022-10-18

申请号：US16435621

申请日：2019-06-10

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Yoon Kim ,  Tae Kyung Lee ,  Sang Kee Yoon ,  Sung Jun Lee ,  Chang Hyun Lim ,  Nam Jung Lee ,  Tae Hun Lee ,  Moon Chul Lee

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/13

Abstract: An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.

公开(公告)号：US11476826B2

公开(公告)日：2022-10-18

申请号：US15812842

申请日：2017-11-14

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Dae Ho Kim ,  Yong Suk Kim ,  Seung Hun Han ,  Moon Chul Lee ,  Chang Hyun Lim ,  Sung Jun Lee ,  Sang Kee Yoon ,  Tae Yoon Kim ,  Sang Uk Son

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/13 ,  H03H3/02

Abstract: A bulk acoustic wave resonator includes: a substrate; a membrane layer forming a cavity together with the substrate; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on a flat surface of the lower electrode; and an upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air, wherein the piezoelectric layer includes a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode.

公开(公告)号：US11437977B2

公开(公告)日：2022-09-06

申请号：US16662473

申请日：2019-10-24

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Yoon Kim ,  Won Han ,  Moon Chul Lee

IPC: H03H9/17 ,  H03H9/13 ,  C23C16/44 ,  H03H9/54 ,  H03H3/04

Abstract: A bulk-acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer at least partially covering the first electrode, and including a flat portion disposed in a central region, and an extension portion disposed outside the flat portion and having at least one step portion; an insertion layer disposed on the extension portion; and a second electrode disposed on upper portions of the insertion layer and the piezoelectric layer. The extension portion includes at least one first surface and at least one second surface disposed below an upper surface of the flat portion, and a connection surface connecting an upper surface of the flat portion to the at least one first surface or the at least one second surface, or connecting first surfaces among the at least one first surface to each other or second surfaces among the at least one second surface to each other.

公开(公告)号：US11431318B2

公开(公告)日：2022-08-30

申请号：US16391650

申请日：2019-04-23

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won Han ,  Chang Hyun Lim ,  Tae Yoon Kim ,  Sang Uk Son ,  Sang Kee Yoon

IPC: H03H9/13 ,  H03H9/17 ,  H01L41/047 ,  H03H3/02 ,  H03H9/02

Abstract: An acoustic resonator includes: a substrate; a resonant portion including a center portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate, and an extension portion disposed along a periphery of the center portion; and a first metal layer disposed outwardly of the resonant portion to be electrically connected to the first electrode. The extension portion includes a lower insertion layer disposed on an upper surface of the first electrode or a lower surface of the first electrode. The piezoelectric layer includes a piezoelectric portion disposed in the center portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline according to a shape of the lower insertion layer. The lower insertion layer is formed of a conductive material extending an electrical path between the first electrode and the first metal layer.

公开(公告)号：US10781096B2

公开(公告)日：2020-09-22

申请号：US16357588

申请日：2019-03-19

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun Lee ,  Kwang Su Kim ,  Tae Yoon Kim

IPC: B81B7/00 ,  B81B7/02 ,  B81C1/00

Abstract: A MEMS device includes a substrate, a MEMS element portion disposed on a surface of the substrate, a cap having a cavity formed to oppose the MEMS element portion, and a diffusion prevention layer formed on at least a portion of the cap, wherein at least one of the cap and the substrate includes a bonding layer disposed outside of the cavity, and wherein the cap includes a spreading prevention portion disposed between the bonding layer and the cavity and having a V-shape in cross-section.

公开(公告)号：US10756702B2

公开(公告)日：2020-08-25

申请号：US16190573

申请日：2018-11-14

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung Lee ,  Tae Yoon Kim ,  Jong Woon Kim ,  Moon Chul Lee ,  Yong Jin Kang ,  Nam Jung Lee

IPC: H03H9/13 ,  H03H9/02 ,  H03H9/17 ,  H03H9/58 ,  H03H3/02 ,  H03H9/15 ,  H03H9/54

Abstract: An acoustic resonator includes a substrate, and a resonant portion comprising a center portion in which a first electrode, a piezoelectric layer and a second electrode are sequentially laminated on the substrate, and an extending portion disposed along a periphery of the center portion, wherein the resonant portion is configured to have an asymmetrical polygonal plane, an insertion layer is disposed below the piezoelectric layer in the extending portion, and the piezoelectric layer is configured to have a top surface which is raised to conform to a shape of the insertion layer, and the insertion layer is configured to have an asymmetrical polygonal shape corresponding to a shape of the extending portion.