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21.
公开(公告)号:US20170302346A1
公开(公告)日:2017-10-19
申请号:US15517431
申请日:2015-10-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang-Soo JEONG , Sang-Min RO , Kyeong-In JEONG , Hyo-jin LEE , Yong-Jun KWAK , Dong-Han KIM , Sang-Bum KIM , Soeng-Hun KIM , Youn-Sun KIM , Jae-Hyuk JANG , Song-Yean CHO , Hyoung-JU JI , Young-Woo KWAK , Hoon-Dong NOH , Cheol-Kyu SHIN , Ju-Ho LEE
CPC classification number: H04B7/0478 , H04B7/0623 , H04B7/0626
Abstract: Disclosed are: a communication technique for fusing, with IoT technology, a 5G communication system for supporting a data transmission rate higher than that of a 4 G system and subsequent systems; and a system thereof. The present disclosure can be applied to an intelligent service (for example, smart home, smart building, smart city, smart car or connected car, health care, digital education, retail business, security and safety-related service and the like) based on 5G communication technology and IoT related technology. The present disclosure presents a method by which a base station determines the approximate location of a terminal on the basis of a reception power report, and sets a codebook subset on the basis of the approximate location of the terminal so as to reduce a channel state report burden.
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公开(公告)号:US20150318226A1
公开(公告)日:2015-11-05
申请号:US14573134
申请日:2014-12-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Bo-Na BAEK , Seok-Won LEE , Eun-Seok CHO , Dong-Han KIM , Kyoung-Sei CHOI , Sa-Yoon KANG
IPC: H01L23/14 , H01L25/10 , H01L23/522
CPC classification number: H01L23/5389 , H01L23/14 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/5226 , H01L23/562 , H01L24/19 , H01L24/20 , H01L25/105 , H01L2224/04042 , H01L2224/04105 , H01L2224/12105 , H01L2224/18 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48235 , H01L2224/73253 , H01L2224/73267 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/1431 , H01L2924/1434 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: Provided is semiconductor package, including a semiconductor chip; an upper structure over the semiconductor chip, the upper structure having a first thermal expansion coefficient; and a lower structure under the semiconductor chip, the lower structure having a second thermal expansion coefficient of less than or equal to the first thermal expansion coefficient.
Abstract translation: 提供半导体封装,包括半导体芯片; 半导体芯片上的上部结构,上部结构具有第一热膨胀系数; 以及在所述半导体芯片下方的下部结构,所述下部结构具有小于或等于所述第一热膨胀系数的第二热膨胀系数。
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