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公开(公告)号：US10833117B2
公开(公告)日：2020-11-10
申请号：US16570273
申请日：2019-09-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eun Sub Shim
IPC: H01L27/146 , H01L27/118
Abstract: An image sensor is provided comprising a substrate comprising first and second surfaces opposite to each other. A first isolation layer is disposed on the substrate and forms a boundary of a sensing region. A second isolation layer is disposed at least partially in the substrate within the sensing region and has a closed line shape. A photoelectric conversion device is disposed within the closed line shape of the second isolation layer, and a color filter is disposed on the first surface of the substrate.
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公开(公告)号：US20190222781A1
公开(公告)日：2019-07-18
申请号：US16115987
申请日：2018-08-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： JUNG WOOK LIM , Eun Sub Shim , Kyung Ho Lee
IPC: H04N5/357 , H01L27/146
CPC classification number: H04N5/357 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14636 , H01L27/14643 , H04N5/378
Abstract: An image sensor includes a photoelectric conversion unit configured to receive light to generate an electric charge and provide the electric charge to a first node, a transfer transistor configured to provide a voltage level of the first node to a floating diffusion node in response to a first signal, a booster configured to increase a voltage level of the floating diffusion node in response to a second signal, a source follower transistor configured to provide the voltage level of the floating diffusion node to a second node, and a selection transistor configured to provide a voltage level of the second node to a pixel output terminal in response to a third signal. After the selection transistor is turned on, the booster is enabled, and before the transfer transistor is turned on, the booster is disabled.
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公开(公告)号：US20240379719A1
公开(公告)日：2024-11-14
申请号：US18651993
申请日：2024-05-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eun Sub Shim
IPC: H01L27/146
Abstract: The present disclosure relates to an image sensor, and the image sensor of the present disclosure may include a plurality of pixels, each of which includes a photovoltaic device configured to convert incident light into charge, and a capacitor configured to store the charge, the capacitor of each of the plurality of pixels may include a first electrode and a second electrode that overlap each other, and a dielectric layer that is between the first electrode and the second electrode, the plurality of pixels may include a first pixel and a second pixel adjacent to each other, and the second electrode of the first pixel and the second electrode of the second pixel may be integral with each other.
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公开(公告)号：US12022221B2
公开(公告)日：2024-06-25
申请号：US17991097
申请日：2022-11-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changhyun Park , Eun Sub Shim
IPC: H04N25/77 , H04N25/46 , H04N25/59 , H04N25/771 , H04N25/773 , H04N25/78
CPC classification number: H04N25/77 , H04N25/771 , H04N25/773
Abstract: An image sensor includes a pixel including a first floating diffusion and a second floating diffusion, generating a first pixel signal based on a quantity of charge of the first floating diffusion, and generating a second pixel signal based on the quantity of charge of the first floating diffusion and a quantity of charge of the second floating diffusion; a column line connected to the pixel and transmitting the first pixel signal or the second pixel signal; and a readout circuit connected to the column line and generating an image signal based on a plurality of comparison results including a first comparison result obtained by comparing the first pixel signal with a first reference signal, a second comparison result obtained by comparing the second pixel signal with a first reference signal, and a third comparison result obtained by comparing the second pixel signal with a second reference signal.
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公开(公告)号：US11979677B2
公开(公告)日：2024-05-07
申请号：US18180904
申请日：2023-03-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eun Sub Shim , Kyung Ho Lee
IPC: H04N25/75 , H01L27/146
CPC classification number: H04N25/75 , H01L27/14603 , H01L27/14612 , H01L27/14627
Abstract: An image sensor is provided. The image sensor includes: a pixel array including a plurality of pixels arranged along rows and columns; and a row driver which drives the plurality of pixels for each of the rows, wherein each of the plurality of pixels includes a plurality of sub-pixels, each of the plurality of sub-pixels includes a plurality of photoelectric conversion elements sharing a floating diffusion area with each other, and a micro lens disposed to overlap the plurality of photoelectric conversion elements, a readout area is defined on the pixel array in accordance with a preset readout mode, and the row driver generates a drive signal for reading out signals provided from a photoelectric conversion element included in the readout area from among the plurality of photoelectric conversion elements, and provides the drive signal to the pixel array.
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Patent Agency Ranking
公开(公告)号：US11606520B2
公开(公告)日：2023-03-14
申请号：US17139288
申请日：2020-12-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eun Sub Shim , Kyungho Lee
Abstract: An image sensor includes a pixel array including a plurality of unit pixels arranged along a plurality of rows and a plurality of columns. Each of the unit pixels includes a photoelectric conversion element generating and accumulating photocharges, a charge detection node receiving the photocharges accumulated in the photoelectric conversion element, a readout circuit converting the photocharges accumulated in and output from the charge detection node into an electrical pixel signal, the readout circuit outputting the electrical pixel signal, a capacitive element, and a switching element controlling connection between the charge detection node and the capacitive element. Each of the rows of the pixel array includes first pixels connected to a first conversion gain control line and second pixels connected to a second conversion gain control line.
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公开(公告)号：US11011559B2
公开(公告)日：2021-05-18
申请号：US16712020
申请日：2019-12-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung Bin Yun , Eun Sub Shim , Kyung Ho Lee , Sung Ho Choi , Jung Hoon Park , Jung Wook Lim , Min Ji Jung
IPC: H01L27/146 , H04N5/374 , H04N5/378 , H04N5/369 , H04N5/3745 , H04N5/357
Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.
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公开(公告)号：US20210127079A1
公开(公告)日：2021-04-29
申请号：US17139288
申请日：2020-12-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eun Sub Shim , Kyungho Lee
Abstract: An image sensor includes a pixel array including a plurality of unit pixels arranged along a plurality of rows and a plurality of columns. Each of the unit pixels includes a photoelectric conversion element generating and accumulating photocharges, a charge detection node receiving the photocharges accumulated in the photoelectric conversion element, a readout circuit converting the photocharges accumulated in and output from the charge detection node into an electrical pixel signal, the readout circuit outputting the electrical pixel signal, a capacitive element, and a switching element controlling connection between the charge detection node and the capacitive element. Each of the rows of the pixel array includes first pixels connected to a first conversion gain control line and second pixels connected to a second conversion gain control line.
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公开(公告)号：US10950639B2
公开(公告)日：2021-03-16
申请号：US16712039
申请日：2019-12-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jung Bin Yun , Eun Sub Shim , Kyung Ho Lee , Sung Ho Choi , Jung Hoon Park , Jung Wook Lim , Min Ji Jung
IPC: H01L27/146 , H04N5/374 , H04N5/378 , H04N5/369 , H04N5/3745 , H04N5/357
Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.
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公开(公告)号：US10917592B2
公开(公告)日：2021-02-09
申请号：US16838517
申请日：2020-04-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eun Sub Shim , Kyungho Lee
Abstract: An image sensor includes a pixel array including a plurality of unit pixels arranged along a plurality of rows and a plurality of columns. Each of the unit pixels includes a photoelectric conversion element generating and accumulating photocharges, a charge detection node receiving the photocharges accumulated in the photoelectric conversion element, a readout circuit converting the photocharges accumulated in and output from the charge detection node into an electrical pixel signal, the readout circuit outputting the electrical pixel signal, a capacitive element, and a switching element controlling connection between the charge detection node and the capacitive element. Each of the rows of the pixel array includes first pixels connected to a first conversion gain control line and second pixels connected to a second conversion gain control line.
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