公开(公告)号：US11721628B2

公开(公告)日：2023-08-08

申请号：US16863126

申请日：2020-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinnam Kim ,  Kwangjin Moon ,  Hojin Lee ,  Pilkyu Kang ,  Hoonjoo Na

IPC: H01L23/535 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L23/48 ,  H01L23/528 ,  H01L23/485 ,  H01L21/768

CPC classification number: H01L23/535 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76895 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/485 ,  H01L23/5286 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate having a first surface and a second surface opposite to each other, and having an active region located on the first surface and defined by a first isolation region; a plurality of active fins arranged on the active region, extending in a first direction, and defined by a second isolation region having a second depth smaller than a first depth of the first isolation region; a buried conductive wiring in a trench adjacent to the plurality of active fins, and extending in a direction of the trench; a filling insulation portion in the trench, and having the buried conductive wiring therein; an interlayer insulation layer on the first and second isolation regions and on the buried conductive wiring; a contact structure penetrating the interlayer insulation layer, and contacting the buried conductive wiring; and a conductive through structure extending through the substrate from the second surface to the trench, and contacting the buried conductive wiring.

公开(公告)号：US11380607B2

公开(公告)日：2022-07-05

申请号：US17147927

申请日：2021-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinnam Kim ,  Seokho Kim ,  Hoonjoo Na ,  Kwangjin Moon

IPC: H01L23/48 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having a first surface on which an active region is disposed, and a second surface opposite the first surface, a buried conductive line extending in one direction and having a portion buried in the active region, an insulating portion covering the buried conductive line, a contact structure disposed on the insulating portion and connected to the buried conductive line, a through-hole extending from the second surface to the insulating portion and exposing the buried portion of the buried conductive line, an insulating isolation film disposed on a side surface of the buried conductive line and exposing a bottom surface of the buried portion and a side surface adjacent to the bottom surface, a through-via contacting the bottom surface and the adjacent side surface of the buried conductive line, an insulating liner surrounding the through-via.

公开(公告)号：US20210020543A1

公开(公告)日：2021-01-21

申请号：US16794782

申请日：2020-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hakseung Lee ,  Jinnam Kim ,  Kwangjin Moon ,  Eunji Kim ,  Taeseong Kim ,  Sangjun Park

IPC: H01L23/48 ,  H01L25/18 ,  H01L21/768 ,  H01L23/00

Abstract: A semiconductor device includes a semiconductor substrate including at least one semiconductor structure, an interlayer insulating layer disposed on the semiconductor substrate, at least one first via structure penetrating the semiconductor substrate and the interlayer insulating layer, including a first region having a first width at an upper surface of the interlayer insulating layer and a second region extending from the first region and having a second width at a lower surface of the semiconductor substrate, wherein a side surface of the first region and a side surface of the second region have different profiles at a boundary between the first region and the second region, and at least one second via structure penetrating the semiconductor substrate and the interlayer insulating layer and having a third width greater than the first width at an upper surface of the interlayer insulating layer.

公开(公告)号：USD870405S1

公开(公告)日：2019-12-17

申请号：US29661602

申请日：2018-08-29

Applicant: Samsung Electronics Co., Ltd.

Designer： Jinnam Kim ,  Jungah Choi

公开(公告)号：USD834265S1

公开(公告)日：2018-11-20

申请号：US29633634

申请日：2018-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Jinnam Kim ,  Sung-Kyung Lee ,  Jungah Choi

公开(公告)号：USD831918S1

公开(公告)日：2018-10-23

申请号：US29613412

申请日：2017-08-10

Applicant: Samsung Electronics Co., Ltd.

Designer： Joonho Lee ,  Jinnam Kim ,  Nami Mo ,  Sujung Youn ,  Jungah Choi

公开(公告)号：USD819284S1

公开(公告)日：2018-05-29

申请号：US29588372

申请日：2016-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Jinnam Kim

公开(公告)号：USD817570S1

公开(公告)日：2018-05-08

申请号：US29588335

申请日：2016-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Jinnam Kim ,  Kyoungmin Lee

公开(公告)号：USD809719S1

公开(公告)日：2018-02-06

申请号：US29588339

申请日：2016-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Jinnam Kim ,  Sung-Kyung Lee ,  Jungah Choi

公开(公告)号：USD1015666S1

公开(公告)日：2024-02-20

申请号：US29829157

申请日：2022-03-03

Applicant: Samsung Electronics Co., Ltd.

Designer： Jinnam Kim ,  Jinsook Park ,  Youngsun Shin ,  Sujin Oh ,  Dohyung Ha ,  Kyoungsoo Sun ,  Hoyoung Joo

Abstract: FIG. 1 is a front perspective view of a washing machine, showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left-side view thereof;
FIG. 5 is a right-side view thereof;
FIG. 6 is a top view thereof;
FIG. 7 is a bottom view thereof;
FIG. 8 is an enlarged view of encircled portion 8 in FIG. 1;
FIG. 9 is an enlarged view of encircled portion 9 in FIG. 1; and,
FIG. 10 is an enlarged view of encircled portion 10 in FIG. 2.
The even-dash broken lines illustrating portions of the washing machine form no part of the claimed design. The dot-dot-dash broken lines encircling enlarged portions of the claimed design form no part of the claimed design.