公开(公告)号：US20190211260A1

公开(公告)日：2019-07-11

申请号：US16245544

申请日：2019-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Nayoun WON ,  Sungwoo HWANG ,  Eun Joo JANG ,  Soo Kyung KWON ,  Yong Wook KIM ,  Jihyun MIN ,  Garam PARK ,  Shang Hyeun PARK ,  Hyo Sook JANG ,  Shin Ae JUN ,  Yong Seok HAN

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/1335 ,  H01L51/50 ,  H01L27/32

CPC classification number: C09K11/0883 ,  B82Y20/00 ,  B82Y40/00 ,  C08L57/10 ,  C08L2203/20 ,  C09K11/025 ,  C09K11/565 ,  C09K11/70 ,  C09K11/883 ,  G02F1/133617 ,  G02F2001/133614 ,  G02F2202/022 ,  G02F2202/102 ,  G02F2202/36 ,  H01L27/322 ,  H01L51/502 ,  H05B33/14

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

公开(公告)号：US20190169500A1

公开(公告)日：2019-06-06

申请号：US16205323

申请日：2018-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongwook KIM ,  Sungwoo HWANG ,  Soo Kyung KWON ,  Yuho WON ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: C09K11/88 ,  C09K11/02 ,  H01L51/50

Abstract: A quantum dot, a method of producing the same, a quantum dot polymer composite including the same, and an electronic device. The quantum dot includes a core including a first semiconductor nanocrystal and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a metal dopant, wherein the first semiconductor nanocrystal includes a Group II-VI compound, a Group III-V compound, or a combination thereof, the second semiconductor nanocrystal includes a Group II-VI compound, and the metal dopant includes hafnium, zirconium, titanium, or a combination thereof.

公开(公告)号：US20140117292A1

公开(公告)日：2014-05-01

申请号：US14039788

申请日：2013-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shin Ae JUN ,  Eun Joo JANG ,  Soo Kyung KWON ,  Taek Hoon KIM ,  Won Joo LEE

IPC: H01L31/032

CPC classification number: H01L31/0296 ,  B82Y30/00 ,  B82Y40/00 ,  H01L31/0304 ,  H01L31/035218 ,  Y02E10/544 ,  Y10S977/774 ,  Y10S977/89

Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0≦x≦1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.

Abstract translation: 包括包含III族元素和V族元素的核的纳米晶体和在芯的表面上的单层壳，所述壳包含式ZnSexS（1-x）的化合物，其中0＆nlE; x＆nlE; 1和 其中单层壳中Se：S的平均摩尔比范围为约2:1至约20:1。

公开(公告)号：US20240036393A1

公开(公告)日：2024-02-01

申请号：US18378606

申请日：2023-10-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Wook KIM ,  Soo Kyung KWON ,  Jaeyong LEE

IPC: G02F1/13357 ,  G02F1/1335

CPC classification number: G02F1/133603 ,  G02F1/133617 ,  G02F1/133514

Abstract: A display device includes a display panel, a backlight unit, and a light conversion sheet between the display panel and the backlight unit. The backlight unit includes a substrate and light-emitting sections arranged on the substrate, one or more light sources are disposed in each of the light-emitting sections, the light conversion sheet includes first partition walls and light conversion sections arranged to correspond to the light-emitting sections, a first partition wall of the first partition walls is disposed between adjacent light conversion sections of the light conversion sections. Each of the light conversion sections includes first quantum dots emitting a first light and second quantum dots emitting a second light having a color different from a color of the first light, and the at least one light source provides light of a predetermined wavelength to the light conversion sheet.

公开(公告)号：US20230220279A1

公开(公告)日：2023-07-13

申请号：US18182428

申请日：2023-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Sungwoo HWANG ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Soo Kyung KWON ,  Seon-Yeong Kim

IPC: C09K11/88 ,  C09K11/56 ,  C01G9/08 ,  C01B19/00 ,  B82Y40/00 ,  F21V8/00 ,  B82Y20/00

CPC classification number: C09K11/883 ,  H10K59/38 ,  H10K50/115 ,  C09K11/565 ,  C01G9/08 ,  C01B19/00 ,  H10K59/12 ,  C01P2006/60 ,  B82Y40/00 ,  G02B6/005 ,  C01P2002/74 ,  B82Y20/00

Abstract: A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.

公开(公告)号：US20230217775A1

公开(公告)日：2023-07-06

申请号：US18091879

申请日：2022-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongwook KIM ,  Ji-Yeong KIM ,  Soo Kyung KWON ,  Eun Joo JANG ,  Sungwoo HWANG

IPC: H10K59/38

CPC classification number: H10K59/38 ,  H10K59/12

Abstract: A display panel includes a light emitting panel and a color conversion panel. The color conversion layer emits a predetermined light. A color of the predetermined light comprises a first region of Cx of about 0.26 to about 0.35 and Cy of about 0.27 to about 0.35 in CIE 1931 color coordinates, and in an emission spectrum of the predetermined light having a color in the first region, a first area percentage is less than or equal to about 65%, where the first area percentage is defined by the following formula: [A/B]×100%, in which A denotes an area of a region having a wavelength of less than or equal to about 470 nm in the emission spectrum, and B denotes an area of a region having a wavelength of less than or equal to about 480 nm in the emission spectrum.

公开(公告)号：US20220119706A1

公开(公告)日：2022-04-21

申请号：US17502645

申请日：2021-10-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung KWON ,  Yong Wook KIM ,  Ji-Yeong KIM ,  Seon-Yeong KIM ,  Sungwoo HWANG

IPC: C09K11/88 ,  C09K11/02 ,  H01L51/50 ,  G02F1/13357

Abstract: A quantum dot composite that includes a matrix; and a plurality of quantum dots and titanium oxide particles dispersed in the matrix, wherein the quantum dots include zinc, tellurium, and selenium, the quantum dots do not comprise cadmium, lead, mercury, or a combination thereof, and in the quantum dot composite, a weight ratio of tellurium with respect to titanium is greater than or equal to about 1.5:1 and less than or equal to about 10:1.

公开(公告)号：US20220119705A1

公开(公告)日：2022-04-21

申请号：US17502542

申请日：2021-10-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungwoo HWANG ,  Soo Kyung KWON ,  Yong Wook KIM ,  Seon-Yeong KIM ,  Ji-Yeong KIM

IPC: C09K11/88 ,  C09K11/02 ,  H01L51/50 ,  G02F1/13357

Abstract: Provided is a quantum dot having a core-shell structure, wherein a core includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell is disposed on the core and includes a Group II-VI compound, wherein the quantum dot further includes phosphorus and fluorine, and the quantum dot does not include cadmium.

公开(公告)号：US20210371734A1

公开(公告)日：2021-12-02

申请号：US17401410

申请日：2021-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung KWON ,  Yong Wook KIM ,  Jihyun MIN ,  Eun Joo JANG

IPC: C09K11/02 ,  C09K11/62 ,  H01L51/50 ,  G02F1/13357

Abstract: A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same.
The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

公开(公告)号：US20210115333A1

公开(公告)日：2021-04-22

申请号：US17072440

申请日：2020-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Sungwoo HWANG ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Soo Kyung KWON ,  Seon-Yeong Kim

IPC: C09K11/88 ,  C09K11/56 ,  C01G9/08 ,  C01B19/00 ,  H01L27/32 ,  H01L51/50

Abstract: A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.