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1.发明申请公开(公告)号：US20250051641A1
公开(公告)日：2025-02-13
申请号：US18797895
申请日：2024-08-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： A Ra JO , Soo Kyung KWON , Seungrim YANG , Seon-Yeong KIM , Tae-Gon KIM , Jun Ho LEE , Mi Hye LIM
Abstract: A semiconductor nanoparticle including a first semiconductor nanocrystal including silver, indium, gallium, and sulfur, and a semiconductor nanoparticle including a second semiconductor nanocrystal including zinc, gallium, and sulfur, a method of manufacturing the same, and an electronic device including the same. The semiconductor nanoparticle is configured to emit a green light. The green light has a peak emission wavelength of about 500 nanometers to about 580 nanometers. In the semiconductor nanoparticle, a molar ratio of zinc to indium is about 0.1:1 to about 10:1.
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公开(公告)号：US20230303924A1
公开(公告)日：2023-09-28
申请号：US18204465
申请日：2023-06-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jihyun MIN , Soo Kyung KWON , Seon-Yeong KIM , Yong Wook KIM , Ji-Yeong KIM , Eun Joo JANG , Sungwoo HWANG
IPC: C09K11/88 , C09K11/02 , H10K50/115 , H10K59/38
CPC classification number: C09K11/883 , C09K11/02 , H10K50/115 , H10K59/38 , G02F2202/36 , B82Y40/00
Abstract: A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.
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3.发明公开公开(公告)号：US20230250333A1
公开(公告)日：2023-08-10
申请号：US18130453
申请日：2023-04-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jihyun MIN , Seon-Yeong KIM , Eun Joo JANG , Hyo Sook JANG , Soo Kyung KWON , Yong Wook KIM
CPC classification number: C09K11/70 , C09K11/62 , H01L29/122 , C09K11/883 , H10K59/38
Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.
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公开(公告)号：US20200217974A1
公开(公告)日：2020-07-09
申请号：US16825293
申请日：2020-03-20
Inventor： Garam PARK , Tae Gon KIM , Nayoun WON , Shin Ae JUN , Soo Kyung KWON , Seon-Yeong KIM , Shang Hyeun PARK , Jooyeon AHN , Yuho WON , Eun Joo JANG , Hyo Sook JANG
Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
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公开(公告)号：US20190211265A1
公开(公告)日：2019-07-11
申请号：US16245594
申请日：2019-01-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Garam PARK , Tae Gon KIM , Nayoun WON , Shin Ae JUN , Soo Kyung KWON , Seon-Yeong KIM , Shang Hyeun PARK , Jooyeon AHN , Yuho WON , Eun Joo JANG , Hyo Sook JANG
IPC: C09K11/88 , C09K11/02 , H01L27/32 , F21V8/00 , G02F1/1335
CPC classification number: C09K11/883 , B82Y20/00 , B82Y40/00 , C09K11/025 , C09K11/565 , C09K11/70 , G02B6/005 , G02F1/133514 , G02F1/133617 , G02F2001/133614 , G02F2202/36 , H01L27/322 , H05B33/14
Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
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Patent Agency Ranking
公开(公告)号：US20180033856A1
公开(公告)日：2018-02-01
申请号：US15659758
申请日：2017-07-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Soo Kyung KWON , Yongwook KIM , Eun Joo JANG , Jihyun MIN
Abstract: A quantum dot includes: a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a dopant, wherein the first semiconductor nanocrystal includes a Group III-V compound, the second semiconductor nanocrystal includes zinc (Zn), sulfur (S), and selenium, and the dopant includes lithium, a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn2+, a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn2+, or a combination thereof. Also a method of producing the quantum dot, and a composite, and an electronic device including the quantum dot.
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7.发明公开公开(公告)号：US20230250336A1
公开(公告)日：2023-08-10
申请号：US18297033
申请日：2023-04-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Wook KIM , Eun Joo JANG , Hyo Sook JANG , Soo Kyung KWON , Seon-Yeong KIM , Ji-Yeong KIM
CPC classification number: C09K11/883 , C09K11/025 , G02B6/005 , G02F1/133617 , C09K11/88 , C09K11/0805 , C09K11/562 , H10K59/12 , H10K59/38 , B82Y20/00
Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.
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公开(公告)号：US20220406974A1
公开(公告)日：2022-12-22
申请号：US17846143
申请日：2022-06-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seon-Yeong KIM , Yong Wook KIM , Soo Kyung KWON , Ji-Yeong KIM , Sungwoo HWANG
Abstract: Nanostructures including a first semiconductor nanocrystal including zinc and selenium, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein a composition of the second semiconductor nanocrystal is different from a composition of the first semiconductor nanocrystal, wherein the nanostructures further include tellurium, wherein in the nanostructures, a mole ratio of selenium to tellurium is greater than or equal to about 0.83:1 and less than or equal to about 10:1, wherein a derivative thermogravimetry curve of the nanostructures has an extreme value in a temperature range of greater than or equal to about 250° C. and less than or equal to about 420° C.
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公开(公告)号：US20220342259A1
公开(公告)日：2022-10-27
申请号：US17726033
申请日：2022-04-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Wook KIM , Soo Kyung KWON , Jaeyong LEE
IPC: G02F1/13357 , G02F1/1335
Abstract: A display device includes a display panel, a backlight unit, and a light conversion sheet between the display panel and the backlight unit. The backlight unit includes a substrate and light-emitting sections arranged on the substrate, one or more light sources are disposed in each of the light-emitting sections, the light conversion sheet includes first partition walls and light conversion sections arranged to correspond to the light-emitting sections, a first partition wall of the first partition walls is disposed between adjacent light conversion sections of the light conversion sections. Each of the light conversion sections includes first quantum dots emitting a first light and second quantum dots emitting a second light having a color different from a color of the first light, and the at least one light source provides light of a predetermined wavelength to the light conversion sheet.
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公开(公告)号：US20220119708A1
公开(公告)日：2022-04-21
申请号：US17503436
申请日：2021-10-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seon-Yeong KIM , Yong Wook KIM , Soo Kyung KWON , Ji-Yeong KIM , Sungwoo HWANG
Abstract: A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.
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