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公开(公告)号:US11539015B2
公开(公告)日:2022-12-27
申请号:US17132971
申请日:2020-12-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Ho Kim , Sung Woo Kim , Eun Joo Jang , Dae Young Chung
Abstract: An electroluminescent device comprising a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode and including at least two light emitting particles, a hole transport layer disposed between the first electrode and the emission layer, and an electron transport layer disposed between the emission layer and the second electrode, wherein the electron transport layer comprises an inorganic layer disposed on the emission layer, the inorganic layer comprising a plurality of inorganic nanoparticles; and an organic layer directly disposed on at least a portion of the inorganic layer on a side opposite the emission layer, wherein a work function of the organic layer is greater than a work function of the inorganic layer.
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公开(公告)号:US11499098B2
公开(公告)日:2022-11-15
申请号:US17007179
申请日:2020-08-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Kun Su Park , Yuho Won , Jeong Hee Lee , Eun Joo Jang , Hyo Sook Jang , Yong Seok Han , Heejae Chung
Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.
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公开(公告)号:US11233211B2
公开(公告)日:2022-01-25
申请号:US16351654
申请日:2019-03-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung Woo Kim , Chan Su Kim , Tae Ho Kim , Kun Su Park , Eun Joo Jang , Jin A Kim , Tae Hyung Kim , Jeong Hee Lee
Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same. The electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode, the emission layer including light emitting particles; an electron transport layer disposed between the first electrode and the emission layer; and a hole transport layer disposed between the second electrode and the emission layer, wherein the electron transport layer includes inorganic oxide particles and a metal-organic compound, the metal-organic compound or a thermal decomposition product of the metal-organic compound being soluble a non-polar solvent.
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公开(公告)号:US10991899B2
公开(公告)日:2021-04-27
申请号:US16561474
申请日:2019-09-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung Woo Kim , Kun Su Park , Dae Young Chung , Eun Joo Jang
Abstract: A quantum dot device including an anode and a cathode facing each other; a quantum dot layer between the anode and the cathode; a hole transport layer between the anode and the quantum dot layer, the hole transport layer being configured to increase a hole transporting property from the anode to the quantum dot layer; an inorganic electron transport layer between the cathode and the quantum dot layer, the inorganic electron transport layer being configured to increase an electron transporting property from the cathode to the quantum dot layer; and an inorganic electron controlling layer between the cathode and the quantum dot layer, the inorganic electron controlling layer being configured to decrease an electron transporting property from the cathode to the quantum dot layer, and an electronic device including the same.
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公开(公告)号:US10535829B1
公开(公告)日:2020-01-14
申请号:US16203666
申请日:2018-11-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Chan Su Kim , Tae Ho Kim , Kun Su Park , Sung Woo Kim , Eun Joo Jang
Abstract: A quantum dot device including an anode and a cathode facing each other, a quantum dot layer between the anode and the cathode and electron auxiliary layer between the quantum dot layer and the cathode, wherein the electron auxiliary layer includes at least one nanoparticle represented by Chemical Formula 1 and at least one metal halide represented by Chemical Formula 2, and a display device. Zn1-xMxO Chemical Formula 1 Q+X− Chemical Formula 2
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公开(公告)号:US20160238269A1
公开(公告)日:2016-08-18
申请号:US15043124
申请日:2016-02-12
Applicant: Samsung Electronics Co., Ltd
Inventor: Jun Hyoun Kwon , Yong Hyun Kil , Sung Woo Kim , Eom Ji Jang
Abstract: Disclosed herein is a dehumidifier having an outer case having a first inlet hole, a second inlet hole, a first outlet hole, and a second outlet hole, a first draft fan to move air from the first inlet hole to the first outlet hole, a second draft fan to move air from the second inlet hole to the second outlet hole, an evaporator to remove moisture included in the air inlet from the first inlet hole, a compressor to compress refrigerant evaporated at the evaporator, a first condenser disposed at a moving path of the air moved by use of the first draft fan, a second condenser disposed at a moving path of the air moved by use of the second draft fan, and an expansion apparatus to expand the refrigerant condensed at the first condenser or the second condenser.
Abstract translation: 本文公开了一种具有外壳的除湿器,该外壳具有第一入口孔,第二入口孔,第一出口孔和第二出口孔,用于将空气从第一入口孔移动到第一出口孔的第一通风扇, 第二通风扇,用于将空气从所述第二入口孔移动到所述第二出口孔;蒸发器,用于从所述第一入口孔除去包含在所述空气入口中的水分,压缩机,用于压缩在所述蒸发器处蒸发的制冷剂;第一冷凝器, 通过使用第一通风机移动空气的路径,设置在通过第二通风机移动的空气的移动路径上的第二冷凝器,以及膨胀装置,用于使在第一冷凝器或第二冷凝器 。
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公开(公告)号:US12041802B2
公开(公告)日:2024-07-16
申请号:US18101603
申请日:2023-01-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jin A Kim , Yuho Won , Sung Woo Kim , Tae Hyung Kim , Jeong Hee Lee , Eun Joo Jang
IPC: H10K50/115
CPC classification number: H10K50/115
Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.
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公开(公告)号:US11981852B2
公开(公告)日:2024-05-14
申请号:US18113650
申请日:2023-02-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yuho Won , Sung Woo Kim , Jin A Kim , Jeong Hee Lee , Tae Hyung Kim , Eun Joo Jang
IPC: C09K11/88 , B82Y20/00 , B82Y40/00 , C09K11/02 , H05B33/14 , H10K50/115 , H10K50/15 , H10K50/16 , H10K50/17
CPC classification number: C09K11/883 , C09K11/02 , H05B33/14 , H10K50/115 , H10K50/15 , H10K50/16 , H10K50/17 , H10K50/171 , B82Y20/00 , B82Y40/00
Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.
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公开(公告)号:US11758746B2
公开(公告)日:2023-09-12
申请号:US17892564
申请日:2022-08-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sujin Park , Yuho Won , Eun Joo Jang , Dae Young Chung , Sung Woo Kim , Jin A Kim , Yong Seok Han
IPC: H01L51/50 , H10K50/115 , H10K50/15 , H10K85/10 , H10K50/16 , H10K71/15 , H10K102/00
CPC classification number: H10K50/115 , H10K50/15 , H10K85/115 , H10K85/1135 , H10K50/16 , H10K71/15 , H10K2102/331 , H10K2102/351
Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, hole transport capability per unit area and electron transport capability per unit area of the first quantum dot are greater than hole transport capability per unit area and electron transport capability per unit area of the second quantum dot, respectively.
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公开(公告)号:US20230262967A1
公开(公告)日:2023-08-17
申请号:US18048561
申请日:2022-10-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jun Hyeok AHN , Sung Woo Kim , Myeong-Dong LEE , Min Ho CHOI
IPC: H01L27/108 , G11C5/06
CPC classification number: H01L27/10897 , G11C5/063 , H01L27/10814
Abstract: A semiconductor memory device may include a substrate including a cell region and a peripheral region along a periphery of the cell region; a cell region isolation layer along the periphery of the cell region in the substrate and defining the cell region; a cell conductive line on the cell region and including a sidewall on the cell region isolation layer; a peripheral gate conductive layer on the peripheral region and including a sidewall on the cell region isolation layer; and an isolation insulating layer in contact with the sidewall of the cell conductive line and the sidewall of the peripheral gate conductive layer on the cell region isolation layer.
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