公开(公告)号：US20200312878A1

公开(公告)日：2020-10-01

申请号：US16903070

申请日：2020-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-il CHANG ,  Jun-Hee Lim ,  Yong-Seok Kim ,  Tae-Young Kim ,  Jae-Sung Sim ,  Su-Jin Ahn ,  Ji-Yeong Hwang

IPC: H01L27/11582 ,  H01L27/11578 ,  H01L29/66 ,  H01L29/78 ,  H01L27/1157 ,  H01L21/265 ,  H01L27/11556

Abstract: In a method of manufacturing a vertical semiconductor device, an insulation layer and a sacrificial layer are alternatively and repeatedly formed on a substrate to define a structure. The structure is etched to form a hole therethrough that exposes the substrate. A first semiconductor pattern is formed in a lower portion of the hole, and a blocking pattern, a charge storage pattern, a tunnel insulation pattern and a first channel pattern are formed on a sidewall of the hole. A second channel pattern is formed on the first channel pattern and the semiconductor pattern, and a second semiconductor pattern is formed on a portion of the second channel pattern on the semiconductor pattern to define an upper channel pattern including the second channel pattern and the second semiconductor pattern. The sacrificial layers are replaced with a plurality of gates, respectively, including a conductive material.

公开(公告)号：US10681694B2

公开(公告)日：2020-06-09

申请号：US15775297

申请日：2016-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Won Kim ,  Hyun-Kyu Yu ,  Yong-Seok Kim ,  Beom-Sik Bae

IPC: H04W72/04 ,  H04B7/0456 ,  H04B7/06 ,  H04B7/08 ,  H04W16/28 ,  H04W72/02 ,  H04B7/0413 ,  H04W74/00 ,  H04W74/02 ,  H04W74/08 ,  H04W72/12 ,  H04L5/00

Abstract: The present invention relates to a 5th-generation (5G) or pre-5G communication system to be provided to support a higher data transmission rate beyond a 4th-generation (4G) communication system such as long term evolution (LTE). The present invention relates to a method for performing a random access process by a base station in a communication system supporting a beamforming scheme, the method comprising the steps of: transmitting information on a reception beam corresponding to each unit time interval; performing, in each unit time interval, a reception beam sweeping process on the basis of the reception beam corresponding to each unit time interval; stopping the reception beam sweeping process when, in the process of performing the reception beam sweeping process, it is detected that a random access process should be performed with a UE in a specific unit time interval; and performing the random access process with the UE.

公开(公告)号：US10680011B2

公开(公告)日：2020-06-09

申请号：US16263417

申请日：2019-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Hwan Lee ,  Chang-Seok Kang ,  Yong-Seok Kim ,  Jun-Hee Lim ,  Kohji Kanamori

IPC: H01L29/792 ,  H01L27/11582 ,  H01L27/11565

Abstract: A vertical semiconductor device includes a conductive pattern structure, a memory layer, a pillar structure, and second and third insulation patterns. The conductive pattern structure includes conductive patterns and insulation layers, and may include a first portion extending in a first direction and a second portion protruding from a sidewall of the first portion. The conductive pattern structures are arranged in a second direction perpendicular to the first direction to form a trench therebetween. The memory layer is formed on sidewalls of the conductive pattern structures. The pillar structures in the trench, each including a channel pattern and a first insulation pattern formed on the memory layer, are spaced apart from each other in the first direction. The second insulation pattern is formed between the pillar structures. The third insulation pattern is formed between some pillar structures, and has a shape different from a shape of the second insulation pattern.

公开(公告)号：US10148335B2

公开(公告)日：2018-12-04

申请号：US15707352

申请日：2017-09-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Seok Kim

IPC: H04B7/06 ,  H04L25/03 ,  H04B7/0452 ,  H04L1/00 ,  H04B7/08 ,  H04B7/0408 ,  H04W72/08 ,  H04B17/336 ,  H04W72/12

Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates beyond 4th-Generation (4G) communication system such as Long Term Evolution (LTE). A method and an apparatus for grouping a plurality of beams into a plurality of beam groups in a wireless communication system supporting Multi-Input Multi-Output (MIMO) are provided. The method includes determining at least one preferred beam set, based on a channel between a plurality of transmission beams of a Base Station (BS) and a plurality of reception beams of a Mobile Station (MS), transmitting information on the at least one preferred beam set, to the BS, generating information indicating interference that at least one transmission beam of the BS exerts to the MS, based on a preferred reception beam comprised in the at least one preferred beam set, and transmitting the generated interference information to the BS.

公开(公告)号：US09582179B2

公开(公告)日：2017-02-28

申请号：US13767226

申请日：2013-02-14

Applicant: Samsung Electronics Co. Ltd.

Inventor： In-Soo Kim ,  Yong-Seok Kim ,  Hyun-Jung Kim ,  Ju-Seung Lee

IPC: G06F3/048 ,  G06F3/0488 ,  G06F3/0484 ,  G06T11/60

CPC classification number: G06F3/0488 ,  G06F3/04845 ,  G06T11/60

Abstract: An apparatus and a method for editing an image in a portable terminal which can conveniently edit the image are provided. The apparatus for editing the image includes a touch screen unit for displaying an image, and a controller for controlling such that, when one or more edit points are selected from edit points displayed in the image in an image edit mode, an edit function window for editing the selected one or more edit points is displayed.

Abstract translation: 提供了一种用于编辑便携式终端中可以方便地编辑图像的图像的装置和方法。 用于编辑图像的装置包括用于显示图像的触摸屏单元和控制器，用于控制使得当以图像编辑模式从图像中显示的编辑点选择一个或多个编辑点时，编辑功能窗口用于 显示编辑所选择的一个或多个编辑点。

公开(公告)号：US09263588B2

公开(公告)日：2016-02-16

申请号：US14635034

申请日：2015-03-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Tae-Hyun Kim ,  Seok-Woo Nam ,  Hyun Namkoong ,  Yong-Seok Kim ,  Tea-Kwang Yu

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/115 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L29/785 ,  H01L21/28282 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/1079 ,  H01L29/42352 ,  H01L29/66818 ,  H01L29/66833 ,  H01L29/7851 ,  H01L29/7854 ,  H01L2029/7858

Abstract: A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.