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46 条记录 (耗时 0.03 秒)

    Method of manufacturing an electronic device comprising a thin film transistor
    22.
    发明申请
    Method of manufacturing an electronic device comprising a thin film transistor 有权
    制造包括薄膜晶体管的电子器件的方法

    公开(公告)号：US20050282316A1

    公开(公告)日：2005-12-22

    申请号：US10529117

    申请日：2003-09-12

    申请人： Nigel Young ,  Soo Yoon ,  Ian French ,  David McCulloch

    发明人： Nigel Young ,  Soo Yoon ,  Ian French ,  David McCulloch

    IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/00

    CPC分类号： H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

    摘要： A method of manufacturing an electronic device comprising a thin film transistor (42), comprises forming a hydrogen-containing layer (22) over a semiconductor layer (10; 20), irradiating the hydrogen-containing layer so as to hydrogenate the semiconductor layer, and then forming electrodes (24; 26, 28) over the semiconductor layer. A short diffusion length and direct path is provided for the hydrogen thus allowing rapid hydrogenation of the semiconductor layer using relatively few, high-fluence laser pulses. The supporting substrate (12) is not heated significantly making the method particularly useful for TFFs on polymer substrates. Crystallisation and hydrogenation of the semiconductor layer can be executed in the same irradiation step.

    摘要翻译： 一种制造包括薄膜晶体管（42）的电子器件的方法，包括在半导体层（10; 20）上形成含氢层（22），照射含氢层以氢化半导体层， 然后在半导体层上形成电极（24; 26,28）。 为氢提供了一个短的扩散长度和直接路径，从而允许使用相对较少的高通量激光脉冲来快速氢化半导体层。 支撑衬底（12）不被显着加热，使得该方法对聚合物衬底上的TFF特别有用。 可以在相同的照射步骤中执行半导体层的结晶和氢化。

    Photodiode for detection within molecular diagnostics
    24.
    发明授权
    Photodiode for detection within molecular diagnostics 失效
    用于分子诊断中检测的光电二极管

    公开(公告)号：US08399855B2

    公开(公告)日：2013-03-19

    申请号：US12374000

    申请日：2007-07-05

    申请人： Pieter Jan Van Der Zaag ,  Ian French ,  Nigel David Young

    发明人： Pieter Jan Van Der Zaag ,  Ian French ,  Nigel David Young

    IPC分类号： G01N21/64

    CPC分类号： H01L31/1055 ,  G01N21/6428 ,  H01L31/103

    摘要： A photodiode (200), for instance a PN or a PIN photodiode, is disclosed. The photodiode receives incident radiation having first and second spectral distributions, where the first spectral distribution is spectrally shifted from the second spectral distribution. The photodiode has a first semiconductor layer (211) capable of absorbing incident radiation (231) having a first spectral distribution without generating a photocurrent, while simultaneously transmitting incident radiation having a second spectral distribution to the intrinsic layer (212) for generating a photocurrent (213). The photodiode may be used in connection with detecting the presence of target molecules that has been labeled with labeling agents, such as fluorophores or quantum dots. The labeling agents are characterized by the Stokes shift and, therefore, they emit fluorescent radiation having the second spectral distribution that is spectrally shifted from the illumination radiation having the first spectral distribution.

    摘要翻译： 公开了一种光电二极管（200），例如PN或PIN光电二极管。 光电二极管接收具有第一和第二光谱分布的入射辐射，其中第一光谱分布从第二光谱分布光谱偏移。 光电二极管具有能够吸收具有第一光谱分布而不产生光电流的入射辐射（231）的第一半导体层（211），同时将具有第二光谱分布的入射辐射传输到本征层（212）以产生光电流 213）。 光电二极管可用于检测已经用标记试剂如荧光团或量子点标记的靶分子的存在。 标记试剂的特征在于斯托克斯位移，因此，它们发射具有与具有第一光谱分布的照射辐射光谱偏移的第二光谱分布的荧光辐射。

    Liquid crystal displays
    26.
    发明申请
    Liquid crystal displays 审中-公开
    液晶显示器

    公开(公告)号：US20060205102A1

    公开(公告)日：2006-09-14

    申请号：US10540106

    申请日：2003-12-09

    申请人： Ian French ,  Sung-il Park

    发明人： Ian French ,  Sung-il Park

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： G02F1/136286 ,  G02F1/133345 ,  G02F1/136209 ,  G02F2001/136295 ,  G02F2201/40

    摘要： An active plate for a liquid crystal display has an insulating layer (76) arranged as a plurality of columns, each insulating layer column overlapping the pixel electrodes (12) of two adjacent columns of pixels. An opaque conductor layer is formed over the substrate and patterned to define column conductors (34) on top of the insulating layer, and source and drain electrodes for the transistor on top of thin film transistor layers (66). Thus, an insulating layer (76) is defined beneath the column conductors (34), so that it lies between the crossing row and column conductors. In addition, the columns of insulating layer (76) overlap adjacent pairs of pixel electrodes (12), so that the column conductors can overlap the pixel electrodes, thereby increasing the pixel aperture. The transparent pixel electrodes (12) are, however, the first layer to be deposited. This gives advantages in process simplification and corresponding cost reduction for manufacture of high quality active matrix LCD (AMLCD) displays.

    摘要翻译： 用于液晶显示器的活性板具有布置为多个列的绝缘层（76），每个绝缘层列与两个相邻列像素的像素电极（12）重叠。 在衬底之上形成不透明导体层，并被图案化以在绝缘层的顶部上限定列导体（34），以及用于在薄膜晶体管层（66）顶部的晶体管的源电极和漏电极。 因此，绝缘层（76）被限定在列导体（34）下方，使得其位于交叉行和列导体之间。 此外，绝缘层（76）的列重叠相邻的像素电极对（12），使得列导体可以与像素电极重叠，从而增加像素孔径。 然而，透明像素电极（12）是要沉积的第一层。 这有利于制造高质量有源矩阵LCD（AMLCD）显示器的过程简化和相应的成本降低。

    Electronic devices having plastic substrates
    29.
    发明授权
    Electronic devices having plastic substrates 有权
    具有塑料基板的电子设备

    公开(公告)号：US08455872B2

    公开(公告)日：2013-06-04

    申请号：US13131379

    申请日：2009-11-30

    申请人： Ian French

    发明人： Ian French

    IPC分类号： H01L29/04 ,  H01L23/58 ,  H01L21/00

    CPC分类号： H01L27/1266 ,  G02F1/136209 ,  H01L27/1248 ,  H01L29/78603

    摘要： A method of manufacturing a thin film electronic device comprises applying a first plastic coating (PI-1) directly to a rigid carrier substrate (40) and forming thin film electronic elements (44) over the first plastic coating. A second plastic coating (46) is applied over the thin film electronic elements with electrodes (47) on top, with a portion lying directly over the associated electronic element, spaced by the second plastic coating. The rigid carrier substrate (40) is released from the first plastic coating, by a laser release process. This method enables traditional materials to be used as the base for the electronic element manufacture, for example thin film transistors. The second plastic coating can form part of the known field shielded pixel (FSP) technology.

    摘要翻译： 制造薄膜电子器件的方法包括将第一塑料涂层（PI-1）直接施加到刚性载体衬底（40）上并在第一塑料涂层上形成薄膜电子元件（44）。 将第二塑料涂层（46）施加在具有顶部的电极（47）的薄膜电子元件上，其中一部分直接位于相关联的电子元件上，由第二塑料涂层隔开。 刚性载体衬底（40）通过激光释放过程从第一塑料涂层释放。 这种方法使得传统材料可以用作电子元件制造的基础，例如薄膜晶体管。 第二塑料涂层可以形成已知的场屏蔽像素（FSP）技术的一部分。

    ELECTRONIC DEVICES HAVING PLASTIC SUBSTRATES
    30.
    发明申请
    ELECTRONIC DEVICES HAVING PLASTIC SUBSTRATES 有权
    具有塑料基板的电子设备

    公开(公告)号：US20110227086A1

    公开(公告)日：2011-09-22

    申请号：US13131379

    申请日：2009-11-30

    申请人： Ian French

    发明人： Ian French

    IPC分类号： H01L29/786 ,  H01L33/58

    CPC分类号： H01L27/1266 ,  G02F1/136209 ,  H01L27/1248 ,  H01L29/78603

    摘要： A method of manufacturing a thin film electronic device comprises applying a first plastic coating (PI-1) directly to a rigid carrier substrate (40) and forming thin film electronic elements (44) over the first plastic coating. A second plastic coating (46) is applied over the thin film electronic elements with electrodes (47) on top, with a portion lying directly over the associated electronic element, spaced by the second plastic coating. The rigid carrier substrate (40) is released from the first plastic coating, by a laser release process. This method enables traditional materials to be used as the base for the electronic element manufacture, for example thin film transistors. The second plastic coating can form part of the known field shielded pixel (FSP) technology.

    摘要翻译： 制造薄膜电子器件的方法包括将第一塑料涂层（PI-1）直接施加到刚性载体衬底（40）上并在第一塑料涂层上形成薄膜电子元件（44）。 将第二塑料涂层（46）施加在具有顶部的电极（47）的薄膜电子元件上，其中一部分直接位于相关联的电子元件上，由第二塑料涂层隔开。 刚性载体衬底（40）通过激光释放过程从第一塑料涂层释放。 这种方法使得传统材料可以用作电子元件制造的基础，例如薄膜晶体管。 第二塑料涂层可以形成已知的场屏蔽像素（FSP）技术的一部分。