公开(公告)号：US20200328372A1

公开(公告)日：2020-10-15

申请号：US16914735

申请日：2020-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO

IPC: H01L51/52 ,  H01L27/12 ,  H01L27/32 ,  H01L51/56 ,  H01L29/786 ,  H01L51/00

Abstract: To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.

公开(公告)号：US20160104725A1

公开(公告)日：2016-04-14

申请号：US14961043

申请日：2015-12-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junya MARUYAMA ,  Toru TAKAYAMA ,  Yumiko OHNO ,  Shunpei YAMAZAKI

IPC: H01L27/12

CPC classification number: H01L27/1218 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1266 ,  H01L29/78603 ,  H01L33/24 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2221/68368

Abstract: A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

公开(公告)号：US20160064687A1

公开(公告)日：2016-03-03

申请号：US14927713

申请日：2015-10-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO

IPC: H01L51/52 ,  H01L29/786 ,  H01L27/12 ,  H01L51/00 ,  H01L27/32

CPC classification number: H01L51/5246 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/3244 ,  H01L27/3276 ,  H01L29/78672 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5243 ,  H01L51/5253 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2251/5323

Abstract: To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first substrate. A pixel portion having a light-emitting element is formed over a second glass substrate, and then, separated from the second substrate. The both are bonded to each other. Therefore, high integration can be achieved. Further, in this case, the separated layer including the CPU serves also as a sealing layer of the light-emitting element.

Abstract translation: 实现使用塑料膜的高性能液晶显示装置或发光元件。 CPU形成在第一玻璃基板上，然后与第一基板分离。 具有发光元件的像素部分形成在第二玻璃基板上，然后与第二基板分离。 两者相互结合。 因此，可以实现高集成度。 此外，在这种情况下，包括CPU的分离层也用作发光元件的密封层。

公开(公告)号：US20140347490A1

公开(公告)日：2014-11-27

申请号：US14457140

申请日：2014-08-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toru TAKAYAMA ,  Junya MARUYAMA ,  Yuugo GOTO ,  Hideaki KUWABARA ,  Shunpei YAMAZAKI

IPC: B60R1/00 ,  B60R11/02 ,  B60R11/04

CPC classification number: H01L27/1266 ,  B60R1/00 ,  B60R11/0229 ,  B60R11/04 ,  B60R2011/004 ,  B60R2300/202 ,  B60R2300/802 ,  H01L21/6835 ,  H01L21/76251 ,  H01L27/1218 ,  H01L27/3244 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68386 ,  H01L2227/323 ,  H01L2227/326

Abstract: To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

Abstract translation: 为了提供其中将要剥离的层附着到具有曲面的基底的半导体器件及其制造方法，更具体地，涉及具有弯曲表面的显示器，更具体地说，具有如下的发光器件，其具有 附着到具有弯曲表面的基部的发光元件。 将包含使用层叠金属层或氮化物层的第一材料层的层叠体和作为氧化物层的第二材料层而设置在基板上的发光元件的剥离层转印到膜上， 然后将膜和要剥离的层弯曲，从而产生具有弯曲表面的显示器。

公开(公告)号：US20140339564A1

公开(公告)日：2014-11-20

申请号：US14450927

申请日：2014-08-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Junya MARUYAMA ,  Yuugo GOTO ,  Yumiko OHNO

IPC: H01L21/70 ,  H01L21/324 ,  H01L27/15 ,  H01L21/28 ,  H01L21/02 ,  H01L21/8234 ,  H01L33/00 ,  H01L21/425

CPC classification number: H01L27/1218 ,  H01L21/02175 ,  H01L21/28008 ,  H01L21/324 ,  H01L21/425 ,  H01L21/707 ,  H01L21/823487 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L29/78603 ,  H01L33/005 ,  H01L33/0054 ,  H01L51/003 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2933/0016

Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

Abstract translation: 本发明提供了一种剥离方法的简化方法以及均匀地剥离和转录到大尺寸基板。 本发明的一个特征是剥离第一粘合剂并在剥离过程中同时固化第二粘合剂，从而简化制造过程。 另外，本发明是为了将形成半导体的电极的剥离层转印为规定的基板的时机。 特别地，特征在于，在大尺寸基板上形成有多个半导体元件的状态下进行剥离的情况下，通过使用压差来进行剥离。

公开(公告)号：US20140203415A1

公开(公告)日：2014-07-24

申请号：US14223419

申请日：2014-03-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junya MARUYAMA ,  Toru TAKAYAMA ,  Yumiko OHNO ,  Shunpei YAMAZAKI

IPC: H01L29/786

CPC classification number: H01L27/1218 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1266 ,  H01L29/78603 ,  H01L33/24 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2221/68368

Abstract: A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

Abstract translation: 在基板上形成金属膜的状态下，通过物理手段或机械装置分离基板和分层膜，以及包含包含金属的氧化物膜和包含硅的膜的分层，其形成在 提供金属膜。 具体地说，通过在金属膜上形成包含金属的氧化物层而获得的TFT; 通过热处理使氧化层结晶; 并且在氧化物层的一层或氧化物层的界面上形成分层。

公开(公告)号：US20130306948A1

公开(公告)日：2013-11-21

申请号：US13950990

申请日：2013-07-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Junya MARUYAMA ,  Yuugo GOTO ,  Yumiko OHNO

IPC: H01L51/56

CPC classification number: H01L27/1218 ,  H01L21/02175 ,  H01L21/28008 ,  H01L21/324 ,  H01L21/425 ,  H01L21/707 ,  H01L21/823487 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L27/3244 ,  H01L29/78603 ,  H01L33/005 ,  H01L33/0054 ,  H01L51/003 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/326 ,  H01L2933/0016

Abstract: The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

公开(公告)号：US20130214434A1

公开(公告)日：2013-08-22

申请号：US13857195

申请日：2013-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO

IPC: H01L23/29

CPC classification number: H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

Abstract: It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.