SEMICONDUCTOR DEVICE
    2.
    发明申请

    公开(公告)号:US20200176068A1

    公开(公告)日:2020-06-04

    申请号:US16780027

    申请日:2020-02-03

    Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.

    SEMICONDUCTOR DEVICE
    3.
    发明申请

    公开(公告)号:US20190378585A1

    公开(公告)日:2019-12-12

    申请号:US16547976

    申请日:2019-08-22

    Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.

    METHOD OF MANUFACTURING DISPLAY DEVICE
    4.
    发明申请
    METHOD OF MANUFACTURING DISPLAY DEVICE 审中-公开
    制造显示装置的方法

    公开(公告)号:US20150187984A1

    公开(公告)日:2015-07-02

    申请号:US14659968

    申请日:2015-03-17

    Abstract: To provide a method of manufacturing a display device having an excellent impact resistance property with high yield, in particular, a method of manufacturing a display device having an optical film that is formed using a plastic substrate. The method of manufacturing a display device includes the steps of: laminating a metal film, an oxide film, and an optical filter on a first substrate; separating the optical filter from the first substrate; attaching the optical filter to a second substrate; forming a layer including a pixel on a third substrate; and attaching the layer including the pixel to the optical filter.

    Abstract translation: 为了提供一种以高产率制造具有优异抗冲击性能的显示装置的方法,特别是制造具有使用塑料基板形成的光学膜的显示装置的方法。 制造显示装置的方法包括以下步骤:在第一基板上层压金属膜,氧化物膜和滤光器; 将所述滤光器与所述第一基板分离; 将所述滤光器附接到第二基板; 在第三基板上形成包括像素的层; 以及将包括像素的层附着到滤光器。

    ELECTRONIC DEVICE WITH SECONDARY BATTERY

    公开(公告)号:US20220209280A1

    公开(公告)日:2022-06-30

    申请号:US17571846

    申请日:2022-01-10

    Abstract: In the case where a film, which has lower strength than a metal can, is used as an exterior body of a secondary battery, a current collector provided in a region surrounded by the exterior body, an active material layer provided on a surface of the current collector, or the like might be damaged when force is externally applied to the secondary battery. A secondary battery that is durable even when force is externally applied thereto is provided. A cushioning material is provided in a region surrounded by an exterior body of a secondary battery, Specifically, a cushioning material is provided on the periphery of a current collector such that a sealing portion of an exterior body (film) is located outside the cushioning material.

    SEMICONDUCTOR DEVICE
    6.
    发明申请

    公开(公告)号:US20220005536A1

    公开(公告)日:2022-01-06

    申请号:US17480311

    申请日:2021-09-21

    Abstract: A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.

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