公开(公告)号：US08927990B2

公开(公告)日：2015-01-06

申请号：US13651809

申请日：2012-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Kosei Noda ,  Yuhei Sato ,  Yuta Endo

IPC: H01L21/477 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/42364

Abstract: Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.

Abstract translation: 氧化物半导体膜中的氢浓度和氧空位减少。 提高了包括使用氧化物半导体膜的晶体管的半导体器件的可靠性。 本发明的一个实施例是一种半导体器件，其包括基底绝缘膜; 形成在所述基底绝缘膜上的氧化物半导体膜; 形成在所述氧化物半导体膜上的栅极绝缘膜; 以及与氧化物半导体膜重叠的栅电极，其间设置有栅极绝缘膜。 基极绝缘膜通过电子自旋共振显示出g值为2.01的信号。 氧化物半导体膜通过电子自旋共振不显示g值为1.93的信号。

公开(公告)号：US20140266115A1

公开(公告)日：2014-09-18

申请号：US14294209

申请日：2014-06-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kei Takahashi ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L27/12 ,  H02M3/158

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869 ,  H02M3/07 ,  H02M3/158

Abstract: A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode.

Abstract translation: 电压调节器电路包括晶体管和电容器。 晶体管包括栅极，源极和漏极，第一信号被输入到源极和漏极中的一个，作为时钟信号的第二信号被输入到栅极，氧化物半导体层被用于沟道 形成层，截止电流小于或等于10AA /μm。 电容器包括第一电极和第二电极，第一电极电连接到晶体管的源极和漏极中的另一个，并且高电源电压和低电源电压交替地施加到第二电极。

公开(公告)号：US11855194B2

公开(公告)日：2023-12-26

申请号：US17500149

申请日：2021-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Miyuki Hosoba ,  Kosei Noda ,  Hiroki Ohara ,  Toshinari Sasaki ,  Junichiro Sakata

IPC: H01L29/786 ,  H01L21/477 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/477 ,  H01L29/7869 ,  H01L27/1225

Abstract: A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

公开(公告)号：US10957714B2

公开(公告)日：2021-03-23

申请号：US16435966

申请日：2019-06-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Atsushi Hirose ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L27/12 ,  H01L29/786 ,  H01L33/02 ,  H04R1/02 ,  H01L29/36 ,  H01L27/15 ,  H01L27/32 ,  H01L29/24 ,  H04M1/02 ,  H01L21/8234

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

公开(公告)号：US10854638B2

公开(公告)日：2020-12-01

申请号：US16546469

申请日：2019-08-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroki Ohara ,  Toshinari Sasaki ,  Kosei Noda ,  Hideaki Kuwabara

IPC: H01L27/00 ,  H01L29/00 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1368 ,  H01L29/24

Abstract: An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

公开(公告)号：US10811540B2

公开(公告)日：2020-10-20

申请号：US16367340

申请日：2019-03-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kosei Noda

IPC: H01L29/786 ,  H01L27/06 ,  H01L49/02 ,  H01L21/8258 ,  H01L29/78 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L27/1156

Abstract: To provide a highly reliable semiconductor device that is suitable for miniaturization and higher density. A semiconductor device includes a first electrode including a protruding portion, a first insulator over the protruding portion, a second insulator covering the first electrode and the first insulator, and a second electrode over the second insulator. The second electrode includes a first region which overlaps with the first electrode with the first insulator and the second insulator provided therebetween and a second region which overlaps with the first electrode with the second insulator provided therebetween. The peripheral portion of the second electrode is provided in the first region.

公开(公告)号：US10565946B2

公开(公告)日：2020-02-18

申请号：US15824343

申请日：2017-11-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Ryo Arasawa ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L27/12 ,  G09G3/36 ,  H01L29/786 ,  H01L21/02 ,  H01L21/467 ,  H01L21/477 ,  H01L29/24 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368

Abstract: In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1×1014/cm3.

公开(公告)号：US10310348B2

公开(公告)日：2019-06-04

申请号：US16109886

申请日：2018-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Masashi Tsubuku ,  Kosei Noda

IPC: G09G3/36 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  G09G5/18

Abstract: A liquid crystal display device includes: a driver circuit portion; a pixel portion; a signal generation circuit for generating a control signal for driving the driver circuit portion and an image signal which is supplied to the pixel portion; a memory circuit; a comparison circuit for detecting a difference of image signals for a series of frame periods among image signals stored for respective frame periods in the memory circuit; a selection circuit which selects and outputs the image signals for the series of frame periods when the difference is detected in the comparison circuit; and a display control circuit which supplies the control signal and the image signals output from the selection circuit, to the driver circuit portion when the difference is detected in the comparison circuit, and stops supplying the control signal to the driver circuit portion when the difference is not detected in the comparison circuit.

公开(公告)号：US09978855B2

公开(公告)日：2018-05-22

申请号：US15281551

申请日：2016-09-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei Noda ,  Suzunosuke Hiraishi

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/66742 ,  H01L29/78621 ,  H01L29/7869 ,  H01L29/78696

Abstract: One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film therebetween. The oxide semiconductor film has a spin density lower than 9.3×1016 spins/cm3 and a carrier density lower than 1×1015/cm3. The spin density is calculated from a peak of a signal detected at a g value (g) of around 1.93 by electron spin resonance spectroscopy. The oxide semiconductor film is formed by a sputtering method while bias power is supplied to the substrate side and self-bias voltage is controlled, and then subjected to heat treatment.

公开(公告)号：US09929280B2

公开(公告)日：2018-03-27

申请号：US15240332

申请日：2016-08-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei Noda ,  Noriyoshi Suzuki

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/42384 ,  H01L29/66969

Abstract: A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor film, diffusion of indium into an insulating film in contact with the oxide semiconductor film and improving the characteristics of the interface between the oxide semiconductor film and the insulating film. In an oxide semiconductor film containing indium, the indium concentration at a surface is decreased, thereby preventing diffusion of indium into an insulating film on and in contact with the oxide semiconductor film. By decreasing the indium concentration at the surface of the oxide semiconductor film, a layer which does not substantially contain indium can be formed at the surface. By using this layer as part of the insulating film, the characteristics of the interface between the oxide semiconductor film and the insulating film in contact with the oxide semiconductor film are improved.