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    SEMICONDUCTOR DEVICE
    22.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230320100A1

    公开(公告)日：2023-10-05

    申请号：US18024823

    申请日：2021-09-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Tatsuya ONUKI ,  Hitoshi KUNITAKE ,  Yasuhiro JINBO

    IPC: H10B51/20 ,  H10B53/20

    CPC classification number: H10B51/20 ,  H10B53/20

    Abstract: A memory device having large memory capacity is provided. A highly reliable memory device is provided. A semiconductor device includes a first conductive layer extending in a first direction, a structure body extending in a second direction intersecting with the first direction, a first insulating layer, and a second insulating layer. The structure body includes a functional layer, a semiconductor layer, a third insulating layer, and a second conductive layer. In an intersection portion of the first conductive layer and the structure body, the third insulating layer, the semiconductor layer, and the functional layer are placed concentrically around the second conductive layer in this order. The first insulating layer and the second insulating layer are stacked in the second direction. The functional layer and the first conductive layer are placed between the first insulating layer and the second insulating layer. The second conductive layer, the third insulating layer, and the semiconductor layer include a portion positioned inside a first opening provided in the first insulating layer and a portion positioned inside a second opening provided in the second insulating layer.

    MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
    25.
    发明申请
    MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20230051739A1

    公开(公告)日：2023-02-16

    申请号：US17783088

    申请日：2020-12-15

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yasuhiro JINBO ,  Yuji EGI

    IPC: H01L27/11524 ,  H01L29/786 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  G11C16/04

    Abstract: To provide a highly reliable memory device. A first insulator is formed over a substrate; a second insulator is formed over the first insulator; a third insulator is formed over the second insulator; an opening penetrating the first insulator, the second insulator, and the third insulator is formed; a fourth insulator is formed on the inner side of a side surface of the first insulator, a side surface of the second insulator, and a side surface of the third insulator, in the opening; an oxide semiconductor is formed on the inner side of the fourth insulator; the second insulator is removed; and a conductor is formed between the first insulator and the third insulator; and the fourth insulator is formed by performing, a plurality of times, a cycle including a first step of supplying a gas containing silicon and an oxidizing gas into a chamber where the substrate is placed, a second step of stopping the supply of the gas containing silicon into the chamber; and a third step of generating plasma containing the oxidizing gas in the chamber.

    TRANSISTOR AND DISPLAY DEVICE
    27.
    发明申请
    TRANSISTOR AND DISPLAY DEVICE 有权

    公开(公告)号：US20220285560A1

    公开(公告)日：2022-09-08

    申请号：US17679413

    申请日：2022-02-24

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hitoshi KUNITAKE ,  Yasuhiro JINBO ,  Naoki OKUNO ,  Masahiro TAKAHASHI ,  Tomonori NAKAYAMA

    IPC: H01L29/786 ,  G09G3/32

    Abstract: A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vsh higher than or equal to −0.3 V.

    FUNCTIONAL PANEL, DEVICE, AND DATA PROCESSOR
    28.
    发明申请
    FUNCTIONAL PANEL, DEVICE, AND DATA PROCESSOR 有权

    公开(公告)号：US20220283659A1

    公开(公告)日：2022-09-08

    申请号：US17750431

    申请日：2022-05-23

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Yasuhiro JINBO ,  Akio ENDO

    IPC: G06F3/041 ,  G06F1/16 ,  G06F3/044

    Abstract: A novel functional panel, a novel device, or a novel data processor is provided. A structure in which a first plane, a second plane that is opposite the first plane, and a neutral plane between the first plane and the second plane are provided and a portion of a functional layer having a thickness greater than or equal to half of the thickness of the functional layer is in a region between the first plane and the neutral plane was conceived.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    30.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220037511A1

    公开(公告)日：2022-02-03

    申请号：US17276166

    申请日：2019-09-24

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Naoki OKUNO ,  Yasuhiro JINBO

    IPC: H01L29/66 ,  H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/417 ,  H01L21/02

    Abstract: A semiconductor device having favorable electrical characteristics is provided. A first oxide is formed over a substrate; a first insulator is formed over the first oxide; an opening reaching the first oxide is formed in the first insulator; a first oxide film is deposited in contact with the first oxide and the first insulator in the opening; a first insulating film is deposited over the first oxide film; microwave treatment is performed from above the first insulating film; heat treatment is performed on one or both of the first insulating film and the first oxide; a first conductive film is deposited over the first insulating film; and part of the first oxide film, part of the first insulating film, and part of the first conductive film are removed until a top surface of the first insulator is exposed, so that a second oxide, a second insulator, and a first conductor are formed. The microwave treatment is performed using a gas containing oxygen under reduced pressure, and the heat treatment is performed under reduced pressure.

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