公开(公告)号：US07691356B2

公开(公告)日：2010-04-06

申请号：US12190151

申请日：2008-08-12

申请人： Takaaki Shimizu ,  Kyoji Oguro

发明人： Takaaki Shimizu ,  Kyoji Oguro

IPC分类号： C01B33/08 ,  C07F7/00

CPC分类号： C01B33/1071 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/45593

摘要： A by-product mixture produced in a process for producing polycrystalline silicon is made to react with chlorine to form tetrachlorosilane (STC) distillate in a chlorination reaction vessel, and the tetrachlorosilane (STC) distillate is made to react with hydrogen in a hydrogenation reaction vessel to be converted into trichlorosilane (TCS). In the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and inhibits carbon from contaminating the polycrystalline silicon. A donor/acceptor eliminator is provided in the circulation cycle for producing TCS, and accordingly there is no need to take out a by-product produced in the process for producing TCS to the outside of the system, which can highly purify the TCS.

摘要翻译： 在多晶硅的制造方法中制造的副产物混合物与氯反应，在氯化反应容器中形成四氯硅烷（STC）馏出物，使四氯硅烷（STC）馏出物在氢化反应容器中与氢反应 转化为三氯硅烷（TCS）。 在氯化步骤中，沸点接近TCS的甲基氯硅烷被高氯化转化为沸点高的高氯甲基氯硅烷，有利于将高氯甲基氯硅烷分离成高浓度，并抑制碳 污染多晶硅。 在生产TCS的循环循环中提供了供体/受体消除器，因此不需要在系统外部将TCS生产过程中产生的副产物取出，这可以高度净化TCS。

公开(公告)号：US6071349A

公开(公告)日：2000-06-06

申请号：US893540

申请日：1997-07-11

申请人： Yasushi Kurosawa ,  Kyoji Oguro ,  Yutaka Ota ,  Yuji Okubo

发明人： Yasushi Kurosawa ,  Kyoji Oguro ,  Yutaka Ota ,  Yuji Okubo

IPC分类号： B01J4/00 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C30B29/06 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/45561 ,  C23C16/455 ,  C30B25/14

摘要： A vapor-phase growth plant which has a dopant gas supplying apparatus comprising a plurality of dopant gas supplying containers, and a multiple stage gas flow subsystem with a plurality of dopant gas supply conduits therein, of which said dopant gas supply conduits form a tournament-style network with a plurality of confluences on which the dopant gas supply conduits are united and the gas flows therein are merged for subjection to even mixing which results in gradual decreasing of the number of the dopant gas supply conduits as the dopant gas flows proceed in the multiple stage gas flow subsystem. Together with the equipped pressure reducing valves, the dopant gas which is highly evened in its pressure and its concentration can be supplied to the vapor-phase growth apparatus, thereby affording stable production of vapor-phase growth products with extremely lessened quality variance. The dopant gas supplying apparatus described compiles the gas supply conduits within it to two groups, each of which can be used alternatively by switching of these. Therefore, the apparatus can supply dopant gas continuously and for a longer period. Also the operation of the dopant gas supplying apparatus can be simplified.

摘要翻译： 一种气相生长装置，其具有包括多个掺杂剂气体供应容器的掺杂剂气体供给装置和其中具有多个掺杂剂气体供应导管的多级气体流动子系统，其中所述掺杂剂气体供应管道形成比赛 - 掺杂气体供应管道合并在一起的多个汇合的风格网络被合并并且气体流入其中的气体网络被合并以便均匀混合，这导致随着掺杂剂气体流动的进行，掺杂剂气体供应管道的数量逐渐减少 多级气流子系统。 与配备的减压阀一起，可以将其压力高度均匀的掺杂气体及其浓度提供给气相生长装置，从而提供稳定的气相生长产物的生产，并且质量差异极小。 上述的掺杂剂气体供给装置将其内部的气体供给管路汇合成两组，每组可以交替使用它们。 因此，该装置可以连续供给较长时间的掺杂气体。 另外，也可以简化掺杂剂气体供给装置的动作。

公开(公告)号：US5310531A

公开(公告)日：1994-05-10

申请号：US983784

申请日：1992-11-30

申请人： Yasuhiro Ikeda ,  Kyoji Oguro

发明人： Yasuhiro Ikeda ,  Kyoji Oguro

IPC分类号： C30B13/00 ,  C30B29/06 ,  C01F3/00

CPC分类号： C30B29/06 ,  C30B13/00

摘要： A polycrystalline silicon rod for preparing a monocrystalline silicon rod by a floating zone method, wherein at least a central portion of the section of the polycrystalline silicon rod has coarsened silicon monocrystalline grains around the center over an area of or above the minimum section of a molten zone during progress in the floating zone method and the outer peripheral portion of the coarsened region has fine monocrystalline grains. From the polycrystalline silicon rod, the monocrystalline silicon rod for a semiconductor is prepared with a high yield by the single floating zone method.

摘要翻译： 一种用于通过浮动区域方法制备单晶硅棒的多晶硅棒，其中所述多晶硅棒的所述部分的至少中心部分在所述中心部分周围的熔融状态的所述最小部分的区域上方粗化了所述硅单晶晶粒 在浮选方法的进行中，粗化区的外周部具有微细的单晶粒。 由多晶硅棒制成半导体用单晶硅棒，通过单浮动法制备高产率。