摘要:
There is provided inter alia a compound of formula (I): wherein R1, J, Ar, L, X, R3 and R4 are as defined in the specification, for use in the treatment of inflammatory disorders.
摘要:
The present disclosure relates to compounds of formula (I): which are inhibitors of p38 mitogen-activated protein kinase enzymes, particularly the alpha and gamma kinase sub-types thereof, and their use in therapy, including in pharmaceutical combinations, especially in the treatment of inflammatory diseases, including inflammatory diseases of the lung, such as COPD.
摘要:
The invention relates to compounds of formula (I): or a pharmaceutically acceptable salt thereof, including all stereoisomers, tautomers and isotopic derivatives thereof, which are inhibitors of p38 mitogen-activated protein kinase enzymes (referred to herein as p38 MAP kinase inhibitors), particularly the alpha and gamma kinase sub-types thereof, and their use in therapy, including in pharmaceutical combinations, especially in the treatment of inflammatory diseases, including inflammatory diseases of the lung, such as COPD.
摘要:
The present invention relates inter alia to the treatment or prevention of influenza virus infection (including subtypes influenza A virus, influenza B virus, avian strain H5N1, A/H1N1, H3N2 and/or pandemic influenza) using compounds which inhibit the activity of p59-HCK and to a method of screening for a candidate drug substance intended to prevent or treat influenza virus infection in a subject, said method comprising identifying a test substance capable of inhibiting p59-HCK activity.
摘要:
The present disclosure relates to compounds of formula (I): which are inhibitors of p38 mitogen-activated protein kinase enzymes, particularly the alpha and gamma kinase sub-types thereof, and their use in therapy, including in pharmaceutical combinations, especially in the treatment of inflammatory diseases, including inflammatory diseases of the lung, such as COPD
摘要:
Provided is a semiconductor interconnection wherein a barrier layer different from a TiO2 layer is formed on an interface between an insulating film and a Cu interconnection without increasing electrical resistivity of the Cu interconnection. In the semiconductor interconnection, a Cu interconnection containing Ti is embedded in a trench arranged on an insulating film on the semiconductor substrate, and a TiC layer is formed between the insulating film and the Cu interconnection. The insulating film is preferably composed of SiCO or SiCN. The thickness of the TiC layer is preferably 3-30 nm.
摘要:
A driving method of a plasma display panel including a discharge space defined by a plurality of scan electrodes, a plurality of sustain electrodes and a plurality of address electrodes for preventing or reducing a misfiring address discharge. In the driving method, a low scan pulse voltage, which is lower than a low scan pulse voltage applied to a previously addressed scan electrode, is applied to a scan electrode which is scanned later in an address period. A low scan pulse voltage applied in an address period of a subfield having a sub-reset period is established to be lower than a low scan pulse voltage applied in an address period of a subfield having a main reset period.
摘要:
According to an exemplary driving method of a plasma display panel of the present invention, waveforms having a reset function, an address function, and a sustain discharge function are applied to a scan electrode while sustain electrodes are biased at a ground voltage. A board for driving the sustain electrodes and a switch for supplying a ground voltage is eliminated and accordingly manufacturing cost of driving boards is reduced. Various circuits for generating the desirable waveforms and simplifications that do not compromise the effectiveness of the circuits are also presented.