摘要:
In implementing an induction heating stress improvement (IHSI) method in a nuclear plant, cooling characteristic with respect to the inner surface of piping is improved by appropriate structure/layout of nozzles, and further, the cooling effect when applying IHSI to a real machine is verified by installing a thermometer, as well as air in the portion subjected to IHSI is removed by heating the piping prior to the execution of IHSI.
摘要:
A method of storing data in an internal storage device included in a process controller for controlling a molding machine divides storage areas of the internal storage device hierarchically into a molding condition data storage area for storing molding condition data specific to a product or an operating environment, a changeable machine data storage area for storing changeable machine data specific to the molding machine and necessary for setting operating conditions and subject to change when necessary, and an unchangeable machine data storage area for storing unchangeable machine data specific to the molding machine. The molding condition data storage area, the changeable machine data storage area, and the unchangeable machine data storage area can selectively be initialized individually or in an optional combination.
摘要:
A method for producing iron carbide by bringing iron ore into contact with a reducing gas containing hydrogen and a carbon compound at a high reaction temperature and at a reaction pressure of the atmospheric pressure or more to reduce and carburize the iron ore with the participation of a sulfur component, the method includes measuring the reaction temperature, partial pressure P(H.sub.2) of the hydrogen and partial pressure P(H.sub.2 S) of hydrogen sulfide contained in the reducing gas, calculating sulfur activity a.sub.s in the reducing gas from Equation (1) shown below, and adjusting the partial pressure P(H.sub.2 S) of the hydrogen sulfide in the reducing gas to obtain a.sub.s =1.0 to 2.0 at reaction temperatures of 550.degree. C. and above but less than 650.degree. C., a.sub.s =0.7 to 2.0 at 650.degree. C., and a.sub.s =0.05 to 1.0 at over 650.degree. C. and up to 950.degree. C.: (1) a.sub.s =(P(H.sub.2 S)/P(H.sub.2))/(P(H.sub.2 S)/P(H.sub.2)).sub.E where (P(H.sub.2 S)/P(H.sub.2)) represents the ratio between the partial pressures of H.sub.2 S and H.sub.2 in the reducing gas and (P(H.sub.2 S)/P(H.sub.2)).sub.E is the ratio between the partial pressures of H.sub.2 S and H.sub.2 in a condition where the reaction of Equation (2) below is in equilibrium: (2) FeS(s)+H.sub.2 (g)=Fe(s)+H.sub.2 S(g) where (s) and (g) represent solid and gaseous phases, respectively. The method includes controlling the reaction pressure to the atmospheric pressure or more in accordance with the oxidizing gas contained in a reducing gas at a reaction temperature of 650.degree. C. or more.
摘要:
An image generating device is provided with a control mechanism which controls an exit paper delivery speed after an image has been fixed to a form. The exit paper delivery speed is changed depending on information detected about the process of generating the image to prevent the form from being delivered with wrinkles. The information detected includes size of paper intervals between forms, length of forms, and whether the image generating process is a repeat copying or continuous form feeding process.
摘要:
A light emitting device is disclosed which includes a semiconductor block, an active layer disposed in such a fashion as to penetrate through the mutually facing end surfaces of the semiconductor block, and an electrode disposed on the main plane of the semiconductor block, wherein the electrode consists of a first electrode portion disposed along the active layer, and a second electrode portion continuing integrally the first electrode portion and having the periphery thereof out of contact from the periphery of the second main plane of the semiconductor block. A current is caused to uniformly flow through the entire active layer, and a light emitting operation is carried out stably. Since the electrode is not disposed on the periphery of the semiconductor block, the occurrence of junction short-curcuit, which might otherwise occur when a wafer is cut off to produce laser chips or when the corners of the chip break off, can be reduced.