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公开(公告)号：US07812351B2
公开(公告)日：2010-10-12
申请号：US12121852
申请日：2008-05-16
CPC分类号： H01L27/0688 , G02F1/1362 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/1112 , H01L27/1248 , H01L27/1277 , H01L29/04 , H01L29/66772 , H01L29/78654 , H01L31/076 , H01L31/1824 , H01L31/1872 , H01L2924/0002 , Y02E10/545 , Y02E10/548 , Y02P70/521 , Y10S257/903 , Y10S257/904 , H01L2924/00
摘要： A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.
摘要翻译： 形成具有侧向生长区域的半导体薄膜，该横向生长区域是大体平行于基底延伸的柱状或针状晶体的集合。 半导体薄膜用具有等效能量的激光或强光照射。 结果，相邻的柱状或针状结晶结合在一起形成基本上不具有晶界的区域，即基本上被认为是单晶的单畴区域。 通过使用单畴区域作为有源层形成半导体器件。
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22.发明授权公开(公告)号：US07372073B2
公开(公告)日：2008-05-13
申请号：US11458412
申请日：2006-07-19
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , G02F1/13454 , H01L21/02532 , H01L21/02672 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/1203 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/66757
摘要： A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals parallel to the substrate surface without including crystal boundaries therein, allowing the active layer to consist of the mono-domain region only. The insulating film underlying the active layer has a specific surface configuration of an intended pattern in profile, including projections or recesses. To fabricate the active layer, form a silicon oxide film by sputtering on the substrate. Pattern the silicon oxide film providing the surface configuration. Form an amorphous silicon film by low pressure CVD on the silicon oxide film. Retain in the silicon oxide film and/or the amorphous silicon film certain metallic element for acceleration of silicon film to a crystalline silicon film. Then, perform a second heat treatment in the halogen atmosphere forming on the crystalline silicon film a thermal oxide film containing halogen, whereby the crystalline silicon film alters to a mono-domain region.
摘要翻译： 半导体器件包括其表面上具有绝缘膜的衬底和在衬底表面上由半导体薄膜制成的交流有源层。 薄膜包含由多个柱状和/或针状晶体形成的单畴区域，其平行于衬底表面而不包括其中的晶界，使活性层仅由单畴区组成。 活性层下面的绝缘膜具有预期图案的特定表面构型，包括凸起或凹槽。 为了制造有源层，通过在衬底上溅射形成氧化硅膜。 形成提供表面构造的氧化硅膜。 通过低压CVD在氧化硅膜上形成非晶硅膜。 保留在氧化硅膜和/或非晶硅膜中的某些金属元素，用于将硅膜加速至晶体硅膜。 然后，在形成在结晶硅膜上的卤素气氛中进行第二次热处理，含有卤素的热氧化膜，由此晶体硅膜改变为单畴区域。
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23.发明申请公开(公告)号：US20060258069A1
公开(公告)日：2006-11-16
申请号：US11458412
申请日：2006-07-19
CPC分类号： H01L27/12 , G02F1/13454 , H01L21/02532 , H01L21/02672 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/1203 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/66757
摘要： A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals parallel to the substrate surface without including crystal boundaries therein, allowing the active layer to consist of the mono-domain region only. The insulating film underlying the active layer has a specific surface configuration of an intended pattern in profile, including projections or recesses. To fabricate the active layer, form a silicon oxide film by sputtering on the substrate. Pattern the silicon oxide film providing the surface configuration. Form an amorphous silicon film by low pressure CVD on the silicon oxide film. Retain in the silicon oxide film and/or the amorphous silicon film certain metallic element for acceleration of silicon film to a crystalline silicon film. Then, perform a second heat treatment in the halogen atmosphere forming on the crystalline silicon film a thermal oxide film containing halogen, whereby the crystalline silicon film alters to a mono-domain region.
摘要翻译： 半导体器件包括其表面上具有绝缘膜的衬底和在衬底表面上由半导体薄膜制成的交流有源层。 薄膜包含由多个柱状和/或针状晶体形成的单畴区域，其平行于衬底表面而不包括其中的晶界，使活性层仅由单畴区组成。 活性层下面的绝缘膜具有预期图案的特定表面构型，包括凸起或凹槽。 为了制造有源层，通过在衬底上溅射形成氧化硅膜。 形成提供表面构造的氧化硅膜。 通过低压CVD在氧化硅膜上形成非晶硅膜。 保留在氧化硅膜和/或非晶硅膜中的某些金属元素，用于将硅膜加速至晶体硅膜。 然后，在形成在结晶硅膜上的卤素气氛中进行第二次热处理，含有卤素的热氧化膜，由此晶体硅膜改变为单畴区域。
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24.发明授权Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method 有权半导体薄膜及其制造方法及半导体器件及其制造方法公开(公告)号：US06909148B2
公开(公告)日：2005-06-21
申请号：US10647539
申请日：2003-08-26
IPC分类号： H01L29/786 , G02F1/136 , G02F1/1362 , H01L21/00 , H01L21/322 , H01L21/336 , H01L21/77 , H01L27/04 , H01L27/06 , H01L27/108 , H01L27/11 , H01L27/12 , H01L29/78 , H01L31/0392 , H01L23/62
CPC分类号： H01L27/0688 , G02F1/1362 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/1112 , H01L27/1248 , H01L27/1277 , H01L29/04 , H01L29/66772 , H01L29/78654 , H01L31/076 , H01L31/1824 , H01L31/1872 , H01L2924/0002 , Y02E10/545 , Y02E10/548 , Y02P70/521 , Y10S257/903 , Y10S257/904 , H01L2924/00
摘要： A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.
摘要翻译： 形成具有侧向生长区域的半导体薄膜，该横向生长区域是大体平行于基底延伸的柱状或针状晶体的集合。 半导体薄膜用具有等效能量的激光或强光照射。 结果，相邻的柱状或针状结晶结合在一起形成基本上不具有晶界的区域，即基本上被认为是单晶的单畴区域。 通过使用单畴区域作为有源层形成半导体器件。
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公开(公告)号：US06787806B1
公开(公告)日：2004-09-07
申请号：US08805952
申请日：1997-02-24
IPC分类号： H01L2904
CPC分类号： H01L21/02672 , G02B27/017 , G02B2027/0138 , H01L21/02532 , H01L21/2022 , H01L21/8221 , H01L27/1277 , H01L29/045 , H01L29/665 , H01L29/66757 , H01L29/78621 , H01L29/78654 , H01L29/78675
摘要： A thin film semiconductor transistor structure has a substrate with a dielectric surface, and an active layer made of a semiconductor thin film exhibiting a crystallinity as equivalent to the single-crystalline. To fabricate the transistor, the semiconductor thin film is formed on the substrate, which film includes a mixture of a plurality of crystals which may be columnar crystals and/or capillary crystal substantially parallel to the substrate. The resultant structure is then subject to thermal oxidation in a chosen atmosphere containing halogen, thereby removing away any metallic element as contained in the film. This may enable formation of a mono-domain region in which the individual columnar or capillary crystal is in contact with any adjacent crystals and which is capable of being substantially deemed to be a single-crystalline region without presence or inclusion of any crystal grain boundaries therein. This region is for use in forming the active layer of the transistor.
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公开(公告)号：US06778164B2
公开(公告)日：2004-08-17
申请号：US10135527
申请日：2002-05-01
IPC分类号： G09G336
CPC分类号： H05B37/00 , G02F1/13452 , G02F1/13454 , G09G3/3648 , G09G3/3688 , G09G2300/0408
摘要： In an electrooptical device including an electrooptical modulating layer between a first substrate 101 and a second substrate 105, all edges 107 to 109 of the first substrate 101 and the second substrate 105, except an edge where IC chips 110 and 111 are attached, are trued up each other between the first substrate 101 and the second substrate 105. By this, it is possible to make the area of the first substrate 101 minimum.
摘要翻译： 在包括第一基板101和第二基板105之间的电光调制层的电光装置中，除了安装IC芯片110和111的边缘之外，第一基板101和第二基板105的所有边缘107至109被修整 在第一基板101和第二基板105之间彼此相对。由此，可以使第一基板101的面积最小化。
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27.发明授权Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method 有权半导体薄膜及其制造方法及半导体器件及其制造方法公开(公告)号：US06396105B1
公开(公告)日：2002-05-28
申请号：US09409949
申请日：1999-09-30
IPC分类号： H01L2362
CPC分类号： H01L27/0688 , G02F1/1362 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/1112 , H01L27/1248 , H01L27/1277 , H01L29/04 , H01L29/66772 , H01L29/78654 , H01L31/076 , H01L31/1824 , H01L31/1872 , H01L2924/0002 , Y02E10/545 , Y02E10/548 , Y02P70/521 , Y10S257/903 , Y10S257/904 , H01L2924/00
摘要： A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.
摘要翻译： 形成具有侧向生长区域的半导体薄膜，该横向生长区域是大体平行于基底延伸的柱状或针状晶体的集合。 半导体薄膜用具有等效能量的激光或强光照射。 结果，相邻的柱状或针状结晶结合在一起形成基本上不具有晶界的区域，即基本上被认为是单晶的单畴区域。 通过使用单畴区域作为有源层形成半导体器件。
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公开(公告)号：US06365933B1
公开(公告)日：2002-04-02
申请号：US08951819
申请日：1997-10-14
申请人： Shunpei Yamazaki , Hisashi Ohtani , Jun Koyama , Takeshi Fukunaga
发明人： Shunpei Yamazaki , Hisashi Ohtani , Jun Koyama , Takeshi Fukunaga
IPC分类号： H01L2701
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/02672 , H01L21/32055 , H01L21/321 , H01L21/3221 , H01L27/10873 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A semiconductor device having performance comparable with a MOSFET is provided. An active layer of the semiconductor device is formed by a crystalline silicon film crystallized by using a metal element for promoting crystallization, and further by carrying out a heat treatment in an atmosphere containing a halogen element to carry out gettering of the metal element. The active layer after this process is constituted by an aggregation of a plurality of needle-shaped or column-shaped crystals. A semiconductor device manufactured by using this crystalline structure has extremely high performance.
摘要翻译： 提供了具有与MOSFET相当的性能的半导体器件。 半导体器件的有源层由通过使用用于促进结晶的金属元素结晶的结晶硅膜形成，并且还在含有卤素元素的气氛中进行热处理以进行金属元素的吸杂。 此过程之后的活性层由多个针状或柱状晶体的聚集构成。 通过使用这种晶体结构制造的半导体器件具有非常高的性能。
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29.发明申请SEMICONDUCTOR THIN FILM AND ITS MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 失效半导体薄膜及其制造方法及半导体器件及其制造方法公开(公告)号：US20080224215A1
公开(公告)日：2008-09-18
申请号：US12121852
申请日：2008-05-16
IPC分类号： H01L29/00
CPC分类号： H01L27/0688 , G02F1/1362 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/1112 , H01L27/1248 , H01L27/1277 , H01L29/04 , H01L29/66772 , H01L29/78654 , H01L31/076 , H01L31/1824 , H01L31/1872 , H01L2924/0002 , Y02E10/545 , Y02E10/548 , Y02P70/521 , Y10S257/903 , Y10S257/904 , H01L2924/00
摘要： A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.
摘要翻译： 形成具有侧向生长区域的半导体薄膜，该横向生长区域是大体平行于基底延伸的柱状或针状晶体的集合。 半导体薄膜用具有等效能量的激光或强光照射。 结果，相邻的柱状或针状结晶结合在一起形成基本上不具有晶界的区域，即基本上被认为是单晶的单畴区域。 通过使用单畴区域作为有源层形成半导体器件。
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公开(公告)号：US07256776B2
公开(公告)日：2007-08-14
申请号：US10918599
申请日：2004-08-16
CPC分类号： H05B37/00 , G02F1/13452 , G02F1/13454 , G09G3/3648 , G09G3/3688 , G09G2300/0408
摘要： In an electrooptical device including an electrooptical modulating layer between a first substrate 101 and a second substrate 105, all edges 107 to 109 of the first substrate 101 and the second substrate 105, except an edge where IC chips 110 and 111 are attached, are trued up each other between the first substrate 101 and the second substrate 105. By this, it is possible to make the area of the first substrate 101 minimum.
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