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1520 条记录 (耗时 0.031 秒)

    Semiconductor device having SOI structure and manufacturing method thereof
    2.
    发明授权
    Semiconductor device having SOI structure and manufacturing method thereof 失效
    具有SOI结构的半导体器件及其制造方法

    公开(公告)号：US07339235B1

    公开(公告)日：2008-03-04

    申请号：US09635832

    申请日：2000-08-09

    申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Jun Koyama ,  Takeshi Fukunaga

    发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Jun Koyama ,  Takeshi Fukunaga

    IPC分类号： H01L29/76 ,  H01L29/94

    CPC分类号： H01L29/78696 ,  B82Y10/00 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/1041 ,  H01L29/66439 ,  H01L29/66772 ,  H01L29/78654

    摘要： A fine semiconductor device having a short channel length while suppressing a short channel effect. Linearly patterned or dot-patterned impurity regions 104 are formed in a channel forming region 103 so as to be generally parallel with the channel direction. The impurity regions 104 are effective in suppressing the short channel effects. More specifically, the impurity regions 104 suppress expansion of a drain-side depletion layer, so that the punch-through phenomenon can be prevented. Further, the impurity regions cause a narrow channel effect, so that reduction in threshold voltage can be lessened.

    摘要翻译： 具有短通道长度同时抑制短通道效应的精细半导体器件。 在通道形成区域103中形成线状图案或点图案化的杂质区域104，以使其大致平行于沟道方向。 杂质区域104有效地抑制短路效应。 更具体地，杂质区域104抑制漏极侧耗尽层的膨胀，从而可以防止穿通现象。 此外，杂质区域引起窄通道效应，从而可以减小阈值电压的降低。

    Semiconductor device having buried oxide film
    7.
    发明授权
    Semiconductor device having buried oxide film 失效
    具有掩埋氧化膜的半导体器件

    公开(公告)号：US08222696B2

    公开(公告)日：2012-07-17

    申请号：US12427140

    申请日：2009-04-21

    申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Jun Koyama ,  Takeshi Fukunaga

    发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Jun Koyama ,  Takeshi Fukunaga

    IPC分类号： H01L27/12

    CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/42324 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/7881

    摘要： An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and the drain region. Regions interposed between the pinning regions serve as channel forming regions. A tunnel oxide film, a floating gate, a control gate, etc. are formed on the above structure. The impurity regions prevent a depletion layer from expanding from the source region toward the drain region.

    摘要翻译： 在单晶半导体衬底或单晶半导体薄膜上形成有源区，源区和漏区。 称为钉扎区域的杂质区域在有源区域中以条纹形式形成，以便到达源极区域和漏极区域两者。 插入在钉扎区域之间的区域用作沟道形成区域。 在上述结构上形成隧道氧化膜，浮栅，控制栅极等。 杂质区域防止耗尽层从源极区域向漏极区域扩展。

    SEMICONDUCTOR DEVICE HAVING BURIED OXIDE FILM
    8.
    发明申请
    SEMICONDUCTOR DEVICE HAVING BURIED OXIDE FILM 失效
    具有氧化膜的半导体器件

    公开(公告)号：US20090315111A1

    公开(公告)日：2009-12-24

    申请号：US12427140

    申请日：2009-04-21

    申请人： SHUNPEI YAMAZAKI ,  Hisashi Ohtani ,  Jun Koyama ,  Takeshi Fukunaga

    发明人： SHUNPEI YAMAZAKI ,  Hisashi Ohtani ,  Jun Koyama ,  Takeshi Fukunaga

    IPC分类号： H01L29/786

    CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/42324 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/7881

    摘要： An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and the drain region. Regions interposed between the pinning regions serve as channel forming regions. A tunnel oxide film, a floating gate, a control gate, etc. are formed on the above structure. The impurity regions prevent a depletion layer from expanding from the source region toward the drain region.

    摘要翻译： 在单晶半导体衬底或单晶半导体薄膜上形成有源区，源区和漏区。 称为钉扎区域的杂质区域在有源区域中以条纹形式形成，以便到达源极区域和漏极区域两者。 插入在钉扎区域之间的区域用作沟道形成区域。 在上述结构上形成隧道氧化膜，浮栅，控制栅极等。 杂质区域防止耗尽层从源极区域向漏极区域扩展。